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场效应晶体管（FETs）、MOSFETs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗（最大值） | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
GC11N65KMOSFET N-CH 650V 11A TO-252 Goford Semiconductor |
30,000 | - |
|
数据表 |
Cool MOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 11A (Tc) | 10V | 360mOhm @ 5.5A, 10V | Surface Mount | 4V @ 250µA | - | - | ±30V | - | - | - | TO-252 | - | 179W (Tc) | -55°C ~ 150°C (TJ) |
|
GT025N06AD5MOSFET N-CH 60V 170A DFN5*6-8L Goford Semiconductor |
40,000 | - |
|
数据表 |
SGT | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 170A (Tc) | 4.5V, 10V | 2.2mOhm @ 20A, 10V | Surface Mount | 2.5V @ 250µA | - | - | ±20V | 5044 pF @ 30 V | - | - | 8-DFN (4.9x5.75) | - | 104W (Tc) | -55°C ~ 150°C (TJ) |
|
|
GT045N10D5MOSFET N-CH 100V 120A 180W 5.0m Goford Semiconductor |
10,000 | - |
|
数据表 |
- | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 120A (Tc) | 10V | 5mOhm @ 30A, 10V | Surface Mount | 4V @ 250µA | 60 nC @ 10 V | 100 V | ±20V | 4217 pF @ 50 V | - | - | 8-DFN (4.9x5.75) | - | 180W (Tc) | -55°C ~ 150°C (TJ) |
|
|
G900P15MMOSFET P-CH 150V 35A TO-263 Goford Semiconductor |
8,000 | - |
|
数据表 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 35A (Tc) | 10V | 80mOhm @ -5A, -10V | Surface Mount | 4V @ 250µA | 27 nC @ -10 V | 150 V | ±20V | 4056 pF @ -75 V | - | - | TO-263 | - | 198W (Tc) | -55°C ~ 150°C (TJ) |
|
|
GT180P08TMOSFET P-CH 80V 89A 245W 17m(max Goford Semiconductor |
5,000 | - |
|
数据表 |
- | TO-220-3 | Tube | Active | P-Channel | MOSFET (Metal Oxide) | 89A (Tc) | 4.5V, 10V | 17mOhm @ 20A, 10V | Through Hole | 2.5V @ 250µA | 62 nC @ 10 V | 40 V | ±20V | 6040 pF @ 40 V | - | - | TO-220 | - | 245W (Tc) | -55°C ~ 150°C (TJ) |
|
|
GT011N03TLEMOSFET N-CH 30V 250A 300W 1.2m( Goford Semiconductor |
2,000 | - |
|
数据表 |
- | 8-PowerSFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 250A (Tc) | 4.5V, 10V | 1.2mOhm @ 10A, 10V | Surface Mount | 2.5V @ 250µA | 98 nC @ 10 V | 30 V | ±18V | 6278 pF @ 15 V | - | - | TOLL-8L | - | 300W (Tc) | -55°C ~ 175°C (TJ) |
|
|
GT250P10TMOSFET P-CH 100V 56A 173.6W 30m( Goford Semiconductor |
2,000 | - |
|
数据表 |
- | TO-220-3 | Tube | Active | P-Channel | MOSFET (Metal Oxide) | 56A (Tc) | 10V | 30mOhm @ 10A, 10V | Through Hole | 4V @ 250µA | 73 nC @ 10 V | 100 V | ±20V | 4059 pF @ 50 V | - | - | TO-220 | - | 173.6W (Tc) | -55°C ~ 150°C (TJ) |
|
|
GT065P06TMOSFET P-CH 60V 82A TO-220 Goford Semiconductor |
40,000 | - |
|
数据表 |
SGT | TO-220-3 | Tube | Active | P-Channel | MOSFET (Metal Oxide) | 82A (Tc) | 4.5V, 10V | 7.5mOhm @ 20A, 10V | Through Hole | 2.5V @ 250µA | - | - | ±20V | - | - | - | TO-220 | - | 150W (Tc) | -55°C ~ 150°C (TJ) |
|
|
GC11N65D5MOSFET N-CH 650V 11A DFN5*6-8L Goford Semiconductor |
10,000 | - |
|
数据表 |
Cool MOS™ | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 11A (Tc) | 10V | 360mOhm @ 5.5A, 10V | Surface Mount | 4V @ 250µA | - | - | ±30V | - | - | - | 8-DFN (4.9x5.75) | - | 78W (Tc) | -55°C ~ 150°C (TJ) |
|
|
GT025N06ATMOSFET N-CH 60V 170A TO-220 Goford Semiconductor |
5,000 | - |
|
数据表 |
SGT | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 170A (Tc) | 4.5V, 10V | 2.5mOhm @ 20A, 10V | Through Hole | 2.5V @ 250µA | - | - | ±20V | - | - | - | TO-220 | - | 215W (Tc) | -55°C ~ 150°C (TJ) |
