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场效应晶体管（FETs）、MOSFETs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗（最大值） | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
GT400P10TMOSFET P-CH 100V 35A TO-220 Goford Semiconductor |
2,000 | - |
|
数据表 |
- | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 35A (Tc) | 4.5V, 10V | 35mOhm @ 10A, 10V | Through Hole | 2.5V @ 250µA | 41 nC @ 10 V | 100 V | ±20V | 3223 pF @ 50 V | - | - | TO-220 | - | 106W (Tc) | -55°C ~ 150°C (TJ) |
|
|
GT011N03D5EMOSFET N-CH ESD 30V 209A DFN5*6- Goford Semiconductor |
5,000 | - |
|
数据表 |
- | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 209A (Tc) | 4.5V, 10V | 0.95mOhm @ 10A, 10V | Surface Mount | 2.5V @ 250µA | 98 nC @ 10 V | 30 V | ±18V | 6503 pF @ 15 V | - | - | 8-DFN (4.9x5.75) | - | 89W (Tc) | -55°C ~ 150°C (TJ) |
|
|
G900P15D5MOSFET P-CH 150V 60A DFN5*6-8L Goford Semiconductor |
10,000 | - |
|
数据表 |
TrenchFET® | 8-PowerTDFN | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 60A (Tc) | 10V | 80mOhm @ 5A, 10V | Surface Mount | 4V @ 250µA | - | - | ±20V | - | - | - | 8-DFN (4.9x5.75) | - | 100W (Tc) | -55°C ~ 150°C (TJ) |
|
|
GT1K2P15MMOSFET P-CH 150V 27A 138W TO-263 Goford Semiconductor |
1,600 | - |
|
数据表 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 27A (Tc) | 4.5V, 10V | 120mOhm @ 15A, 10V | Surface Mount | 3V @ 250µA | 86 nC @ 10 V | 150 V | ±20V | 3186 pF @ 75 V | - | - | TO-263 | - | 138W (Tc) | -55°C ~ 150°C (TJ) |
|
|
GT080N10MMOSFET N-CH 100V 70A TO-263 Goford Semiconductor |
1,600 | - |
|
数据表 |
SGT | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 70A (Tc) | 4.5V, 10V | 7.5mOhm @ 20A, 10V | Surface Mount | 3V @ 250µA | - | - | ±20V | - | - | - | TO-263 | - | 100W (Tc) | -55°C ~ 150°C (TJ) |
|
|
GT011N03TEMOSFET N-CH ESD 30V 209A 89W TO Goford Semiconductor |
4,000 | - |
|
数据表 |
- | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 209A (Tc) | 4.5V, 10V | 2.2mOhm @ 30A, 10V | Through Hole | 2.5V @ 250µA | 98 nC @ 10 V | 30 V | ±20V | 5988 pF @ 15 V | - | - | TO-220 | - | 89W (Tc) | -55°C ~ 150°C (TJ) |
|
|
GT060N10TMOSFET N-CH 100V 116A TO-220 Goford Semiconductor |
2,000 | - |
|
数据表 |
- | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 116A (Tc) | 10V | 6mOhm @ 30A, 10V | Through Hole | 4V @ 250µA | 83 nC @ 10 V | 100 V | ±20V | 5365 pF @ 50 V | - | - | TO-220 | - | 160W (Tc) | -55°C ~ 150°C (TJ) |
|
|
GT400P10MMOSFET P-CH 100V 35A TO-263 Goford Semiconductor |
1,600 | - |
|
数据表 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 35A (Tc) | 4.5V, 10V | 35mOhm @ 10A, 10V | Surface Mount | 2.5V @ 250µA | 41 nC @ 10 V | 100 V | ±20V | 3073 pF @ 50 V | - | - | TO-263 | - | 106W (Tc) | -55°C ~ 150°C (TJ) |
|
|
GT065P06D5MOSFET P-CH 60V 103A DFN5*6-8L Goford Semiconductor |
5,000 | - |
|
数据表 |
- | 8-PowerTDFN | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 103A (Tc) | 4.5V, 10V | 7mOhm @ -20A, -10V | Surface Mount | 2.5V @ 250µA | 62 nC @ 10 V | 60 V | ±20V | 5326 pF @ -30 V | - | - | 8-DFN (4.9x5.75) | - | 178W (Tc) | -55°C ~ 150°C (TJ) |
|
G110N06TMOSFET N-CH 60V 110A TO-220 Goford Semiconductor |
10,000 | - |
|
数据表 |
TrenchFET® | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 110A (Tc) | 4.5V, 10V | 6.4mOhm @ 20A, 10V | Through Hole | 2.5V @ 250µA | - | - | ±20V | - | - | - | TO-220 | - | 160W (Tc) | -55°C ~ 150°C (TJ) |
