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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
G090P02S

G090P02S

MOSFET P-CH 20V 11A SOP-8

Goford Semiconductor

8,000 -
G090P02S

数据表

- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 11A (Tc) 2.5V, 4.5V 9mOhm @ 1A, 4.5V Surface Mount 1.1V @ 250µA 47 nC @ 10 V 20 V ±20V 2225 pF @ 10 V - - 8-SOP - 3.3W (Tc) -55°C ~ 150°C (TJ)
G3K8N15KE

G3K8N15KE

MOSFET N-CH ESD 150V 6A TO-252

Goford Semiconductor

5,000 -
G3K8N15KE

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 6A (Tc) 4.5V, 10V 370mOhm @ 2A, 10V Surface Mount 2.5V @ 250µA 20 nC @ 10 V 150 V ±20V 549 pF @ 75 V - - TO-252 - 20W (Tc) -55°C ~ 150°C (TJ)
G15P04K

G15P04K

MOSFET P-CH 40V 15A TO-252

Goford Semiconductor

2,500 -
G15P04K

数据表

TrenchFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 15A (Tc) 4.5V, 10V 39mOhm @ 10A, 10V Surface Mount 3V @ 250µA - - ±20V - - - TO-252 - 50W (Tc) -55°C ~ 150°C (TJ)
G2K2P10SE

G2K2P10SE

MOSFET P-CH ESD 100V 3.5A SOP-8

Goford Semiconductor

4,000 -
G2K2P10SE

数据表

TrenchFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 3.5A (Tc) 4.5V, 10V 200mOhm @ 3A, 10V Surface Mount 2.5V @ 250µA - - ±20V - - - 8-SOP - 3.1W (Tc) -55°C ~ 150°C (TJ)
G12P06K

G12P06K

MOSFET P-CH 60V 12A TO-252

Goford Semiconductor

60,000 -
G12P06K

数据表

TrenchFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 12A (Tc) 4.5V, 10V 75mOhm @ 6A, 10V Surface Mount 3V @ 250µA - - ±20V - - - TO-252 - 27W (Tc) -55°C ~ 150°C (TJ)
G50N03J

G50N03J

MOSFET N-CH 30V 65A TO-251

Goford Semiconductor

3,000 -
G50N03J

数据表

TrenchFET® TO-251-3 Stub Leads, IPAK Tube Active N-Channel MOSFET (Metal Oxide) 65A (Tc) 4.5V, 10V 7mOhm @ 20A, 10V Through Hole 2.5V @ 250µA - - ±20V - - - TO-251 - 48W (Tc) -55°C ~ 150°C (TJ)
G23N06K

G23N06K

MOSFET N-CH 60V 23A TO-252

Goford Semiconductor

5,000 -
G23N06K

数据表

TrenchFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 23A (Tc) 4.5V, 10V 35mOhm @ 20A, 10V Surface Mount 2.5V @ 250µA - - ±20V - - - TO-252 - 38W (Tc) -55°C ~ 150°C (TJ)
G700P06D5

G700P06D5

MOSFET P-CH 60V 25A DFN5*6-8L

Goford Semiconductor

5,000 -
G700P06D5

数据表

TrenchFET® 8-PowerTDFN Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 25A (Tc) 4.5V, 10V 70mOhm @ 4A, 10V Surface Mount 2.5V @ 250µA - - ±20V - - - 8-DFN (4.9x5.75) - 42W (Tc) -55°C ~ 150°C (TJ)
G06N06S

G06N06S

MOSFET N-CH 60V 8A SOP-8

Goford Semiconductor

20,000 -
G06N06S

数据表

TrenchFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 8A (Tc) 4.5V, 10V 22mOhm @ 6A, 10V Surface Mount 2.4V @ 250µA - - ±20V - - - 8-SOP - 2.1W (Tc) -55°C ~ 150°C (TJ)
G30N04D3

G30N04D3

MOSFET N-CH 40V 30A DFN3*3-8L

Goford Semiconductor

10,000 -
G30N04D3

数据表

TrenchFET® 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30A (Tc) 4.5V, 10V 9.5mOhm @ 20A, 10V Surface Mount 2.5V @ 250µA - - ±20V 1780 pF @ 20 V - - 8-DFN (3.15x3.05) - 19.8W (Tc) -55°C ~ 150°C (TJ)
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