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场效应晶体管（FETs）、MOSFETs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗（最大值） | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
G170P02D2MOSFET P-CH 20V 16A DFN2*2-6L Goford Semiconductor |
60,000 | - |
|
数据表 |
TrenchFET® | 6-UDFN Exposed Pad | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 16A (Tc) | 2.5V, 4.5V | 17mOhm @ 6A, 4.5V | Surface Mount | 1V @ 250µA | - | - | ±8V | - | - | - | 6-DFN (2x2) | - | 18W (Tc) | -55°C ~ 150°C (TJ) |
|
|
G2014MOSFET N-CH 20V 14A DFN2*2-6L Goford Semiconductor |
6,000 | - |
|
数据表 |
TrenchFET® | 6-WDFN Exposed Pad | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 14A (Tc) | 2.5V, 10V | 7mOhm @ 5A, 10V | Surface Mount | 900mV @ 250µA | - | - | ±12V | - | - | - | 6-DFN (2x2) | - | 3W (Tc) | -55°C ~ 150°C (TJ) |
|
G12P03D3MOSFET P-CH 30V 12A DFN3*3-8L Goford Semiconductor |
100,000 | - |
|
数据表 |
TrenchFET® | 8-PowerVDFN | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 12A (Tc) | 4.5V, 10V | 20mOhm @ 6A, 10V | Surface Mount | 2V @ 250µA | - | - | ±20V | - | - | - | 8-DFN (3.15x3.05) | - | 30W (Tc) | -55°C ~ 150°C (TJ) |
|
G10N03SMOSFET N-CH 30V 10A SOP-8 Goford Semiconductor |
20,000 | - |
|
数据表 |
TrenchFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 10A (Tc) | 4.5V, 10V | 12mOhm @ 6A, 10V | Surface Mount | 2.5V @ 250µA | - | - | ±20V | - | - | - | 8-SOP | - | 2.5W (Tc) | -55°C ~ 150°C (TJ) |
|
|
G28N03D3MOSFET N-CH 30V 28A DFN3*3-8L Goford Semiconductor |
10,000 | - |
|
数据表 |
TrenchFET® | 8-PowerVDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 28A (Tc) | 4.5V, 10V | 12mOhm @ 16A, 10V | Surface Mount | 2.5V @ 250µA | - | - | ±20V | - | - | - | 8-DFN (3.15x3.05) | - | 23W (Tc) | -55°C ~ 150°C (TJ) |
|
|
G33N03SMOSFET N-CH 30V 13A SOP-8 Goford Semiconductor |
8,000 | - |
|
数据表 |
TrenchFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 13A (Tc) | 4.5V, 10V | 12mOhm @ 8A, 10V | Surface Mount | 1.1V @ 250µA | - | - | ±20V | - | - | - | 8-SOP | - | 2.5W (Tc) | -55°C ~ 150°C (TJ) |
|
|
G7P03SMOSFET P-CH 30V 9A SOP-8 Goford Semiconductor |
40,000 | - |
|
数据表 |
TrenchFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 9A (Tc) | 4.5V, 10V | 22mOhm @ 3A, 10V | Surface Mount | 2V @ 250µA | - | - | ±20V | - | - | - | 8-SOP | - | 2.7W (Tc) | -55°C ~ 150°C (TJ) |
|
|
G11SMOSFET P-CH 20V 11A SOP-8 Goford Semiconductor |
20,000 | - |
|
数据表 |
TrenchFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 11A (Tc) | 2.5V, 4.5V | 18.4mOhm @ 1A, 4.5V | Surface Mount | 1.1V @ 250µA | - | - | ±12V | - | - | - | 8-SOP | - | 3.3W (Tc) | -55°C ~ 150°C (TJ) |
|
|
G1K3N10GMOSFET N-CH 100V 5A TO-89 Goford Semiconductor |
16,000 | - |
|
数据表 |
TrenchFET® | TO-243AA | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 5A (Tc) | 4.5V, 10V | 130mOhm @ 5A, 10V | Surface Mount | 2V @ 250µA | - | - | ±20V | - | - | - | SOT-89 | - | 1.5W (Tc) | -55°C ~ 150°C (TJ) |
|
|
G10P03MOSFET P-CH 30V 10A DFN3*3-8L Goford Semiconductor |
5,000 | - |
|
数据表 |
TrenchFET® | 8-PowerVDFN | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 10A (Tc) | 2.5V, 4.5V | 26mOhm @ 10A, 4.5V | Surface Mount | 1.5V @ 250µA | - | - | ±12V | - | - | - | 8-DFN (3.15x3.05) | - | 20W (Tc) | -55°C ~ 150°C (TJ) |
