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场效应晶体管（FETs）、MOSFETs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗（最大值） | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
G30N03D3MOSFET N-CH 30V 30A DFN3*3-8L Goford Semiconductor |
10,000 | - |
|
数据表 |
TrenchFET® | 8-PowerVDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 30A (Tc) | 4.5V, 10V | 7mOhm @ 20A, 10V | Surface Mount | 2.5V @ 250µA | - | - | ±20V | - | - | - | 8-DFN (3.15x3.05) | - | 24W (Tc) | -55°C ~ 150°C (TJ) |
|
G16N03SMOSFET N-CH 30V 16A SOP-8 Goford Semiconductor |
8,000 | - |
|
数据表 |
TrenchFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 16A (Tc) | 5V, 10V | 10mOhm @ 10A, 10V | Surface Mount | 2.5V @ 250µA | - | - | ±20V | - | - | - | 8-SOP | - | 2.5W (Tc) | -55°C ~ 150°C (TJ) |
|
|
G700P06JMOSFET P-CH 60V 23A TO-251 Goford Semiconductor |
3,000 | - |
|
数据表 |
TrenchFET® | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Active | P-Channel | MOSFET (Metal Oxide) | 23A (Tc) | 4.5V, 10V | 70mOhm @ 6A, 10V | Through Hole | 3V @ 250µA | - | - | ±20V | - | - | - | TO-251 | - | 50W (Tc) | -55°C ~ 150°C (TJ) |
|
4435MOSFET P-CH 30V 11A SOP-8 Goford Semiconductor |
40,000 | - |
|
数据表 |
TrenchFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 11A (Tc) | 4.5V, 10V | 20mOhm @ 10A, 10V | Surface Mount | 2.5V @ 250µA | - | - | ±20V | - | - | - | 8-SOP | - | 2.5W (Tc) | -55°C ~ 150°C (TJ) |
|
|
GT10N10MOSFET N-CH 100V 7A TO-252 Goford Semiconductor |
50,000 | - |
|
数据表 |
SGT | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 7A (Tc) | 4.5V, 10V | 140mOhm @ 3.5A, 10V | Surface Mount | 2.5V @ 250µA | - | - | ±20V | - | - | - | TO-252 | - | 17W (Tc) | -55°C ~ 150°C (TJ) |
|
G12P04KMOSFET P-CH 40V 12A TO-252 Goford Semiconductor |
20,000 | - |
|
数据表 |
TrenchFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 12A (Tc) | 4.5V, 10V | 35mOhm @ 6A, 10V | Surface Mount | 2.5V @ 250µA | - | - | ±20V | - | - | - | TO-252 | - | 50W (Tc) | -55°C ~ 150°C (TJ) |
|
|
G160N04KMOSFET N-CH 40V 25A TO-252 Goford Semiconductor |
7,500 | - |
|
数据表 |
TrenchFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 25A (Tc) | 4.5V, 10V | 15mOhm @ 8A, 10V | Surface Mount | 2V @ 250µA | - | - | ±20V | - | - | - | TO-252 | - | 43W (Tc) | -55°C ~ 150°C (TJ) |
|
|
G36N03KMOSFET N-CH 30V 36A TO-252 Goford Semiconductor |
5,000 | - |
|
数据表 |
TrenchFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 36A (Tc) | 4.5V, 10V | 8.5mOhm @ 20A, 10V | Surface Mount | 2.2V @ 250µA | - | - | ±20V | - | - | - | TO-252 | - | 31W (Tc) | -55°C ~ 150°C (TJ) |
|
|
G04P10HEMOSFET P-CH ESD 100V 4A SOT-223 Goford Semiconductor |
2,500 | - |
|
数据表 |
TrenchFET® | TO-261-4, TO-261AA | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 4A (Tc) | 4.5V, 10V | 200mOhm @ 6A, 10V | Surface Mount | 2.8V @ 250µA | - | - | ±20V | - | - | - | SOT-223 | - | 1.2W (Tc) | -55°C ~ 150°C (TJ) |
|
|
G15N10CMOSFET N-CH 100V 22A TO-252 Goford Semiconductor |
50,000 | - |
|
数据表 |
TrenchFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 22A (Tc) | 4.5V, 10V | 90mOhm @ 8A, 10V | Surface Mount | 3V @ 250µA | - | - | ±20V | - | - | - | TO-252 | - | 55W (Tc) | -55°C ~ 150°C (TJ) |
