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场效应晶体管（FETs）、MOSFETs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗（最大值） | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
G2K3N10HMOSFET N-CH 100V 2A SOT-223 Goford Semiconductor |
20,000 | - |
|
数据表 |
TrenchFET® | TO-261-4, TO-261AA | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 2A (Tc) | 4.5V, 10V | 220mOhm @ 2A, 10V | Surface Mount | 2V @ 250µA | - | - | ±20V | - | - | - | SOT-223 | - | 2.4W (Tc) | -55°C ~ 150°C (TJ) |
|
|
G9435SMOSFET P-CH 30V 5.1A SOP-8 Goford Semiconductor |
4,000 | - |
|
数据表 |
TrenchFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 5.1A (Tc) | 4.5V, 10V | 55mOhm @ 5.1A, 10V | Surface Mount | 3V @ 250µA | - | - | ±20V | - | - | - | 8-SOP | - | 2.5W (Tc) | -55°C ~ 150°C (TJ) |
|
|
G7K2N20LLEMOSFET N-CH ESD 200V 2A SOT-23-6 Goford Semiconductor |
24,000 | - |
|
数据表 |
TrenchFET® | SOT-23-6 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 2A (Tc) | 4.5V, 10V | 700mOhm @ 1A, 10V | Surface Mount | 2.5V @ 250µA | - | - | ±20V | - | - | - | SOT-23-6L | - | 1.8W (Tc) | -55°C ~ 150°C (TJ) |
|
|
G050N06LLMOSFET N-CH 60V 5A SOT-23-6L Goford Semiconductor |
120,000 | - |
|
数据表 |
TrenchFET® | SOT-23-6 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 5A (Tc) | 4.5V, 10V | 45mOhm @ 5A, 10V | Surface Mount | 2.5V @ 250µA | - | - | ±20V | - | - | - | SOT-23-6L | - | 1.25W (Tc) | -55°C ~ 150°C (TJ) |
|
|
G700P06LLMOSFET P-CH 60V 5A SOT-23-6L Goford Semiconductor |
12,000 | - |
|
数据表 |
TrenchFET® | SOT-23-6 | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 5A (Tc) | 4.5V, 10V | 75mOhm @ 3.2A, 10V | Surface Mount | 3V @ 250µA | - | - | ±20V | - | - | - | SOT-23-6L | - | 3.1W (Tc) | -55°C ~ 150°C (TJ) |
|
|
G1006LEMOSFET N-CH ESD 100V 3A SOT-23-3 Goford Semiconductor |
90,000 | - |
|
数据表 |
TrenchFET® | TO-236-3, SC-59, SOT-23-3 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 3A (Tc) | 4.5V, 10V | 150mOhm @ 3A, 10V | Surface Mount | 2.2V @ 250µA | - | - | ±20V | - | - | - | SOT-23-3 | - | 1.5W (Tc) | -55°C ~ 150°C (TJ) |
|
|
G220P02D2MOSFET P-CH 20V 8A DFN2*2-6L Goford Semiconductor |
9,000 | - |
|
数据表 |
TrenchFET® | 6-UDFN Exposed Pad | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 8A (Tc) | 4.5V, 10V | 20mOhm @ 6A, 10V | Surface Mount | 1.2V @ 250µA | - | - | ±12V | - | - | - | 6-DFN (2x2) | - | 3.5W (Tc) | -55°C ~ 150°C (TJ) |
|
G20N03D2MOSFET N-CH 30V 9A DFN2*2-6L Goford Semiconductor |
3,000 | - |
|
数据表 |
TrenchFET® | 6-WDFN Exposed Pad | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 9A (Tc) | 4.5V, 10V | 15mOhm @ 5A, 10V | Surface Mount | 2V @ 250µA | - | - | ±20V | - | - | - | 6-DFN (2x2) | - | 1.5W (Tc) | -55°C ~ 150°C (TJ) |
|
|
G2012MOSFET N-CH 20V 12A DFN2*2-6L Goford Semiconductor |
3,000 | - |
|
数据表 |
TrenchFET® | 6-WDFN Exposed Pad | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 12A (Tc) | 2.5V, 4.5V | 12mOhm @ 5A, 4.5V | Surface Mount | 1V @ 250µA | - | - | ±10V | - | - | - | 6-DFN (2x2) | - | 1.5W (Tc) | -55°C ~ 150°C (TJ) |
|
|
G1K1P06HHMOSFET P-CH 60V 4.5A SOT-223 Goford Semiconductor |
2,500 | - |
|
数据表 |
TrenchFET® | TO-261-4, TO-261AA | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 4.5A (Tc) | 10V | 110mOhm @ 4A, 10V | Surface Mount | 4V @ 250µA | - | - | ±20V | - | - | - | SOT-223 | - | 3.1W (Tc) | -55°C ~ 150°C (TJ) |
