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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
G18P03S

G18P03S

MOSFET P-CH 30V 15A SOP-8

Goford Semiconductor

4,000 -
G18P03S

数据表

TrenchFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 15A (Tc) 4.5V, 10V 10mOhm @ 10A, 10V Surface Mount 2.5V @ 250µA - - ±20V - - - 8-SOP - 3.1W (Tc) -55°C ~ 150°C (TJ)
G30N02T

G30N02T

MOSFET N-CH 20V 30A TO-220

Goford Semiconductor

3,000 -
G30N02T

数据表

TrenchFET® TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 30A (Tc) 4.5V 13mOhm @ 20A, 4.5V Through Hole 1.2V @ 250µA - - ±12V - - - TO-220 - 40W (Tc) -55°C ~ 150°C (TJ)
GT700P08D3

GT700P08D3

MOSFET P-CH 80V 16A 69W 75m(max)

Goford Semiconductor

5,000 -
GT700P08D3

数据表

- 8-PowerVDFN Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 16A (Tc) 10V 75mOhm @ 2A, 10V Surface Mount 3.5V @ 250µA 75 nC @ 10 V 80 V ±20V 1591 pF @ 40 V - - 8-DFN (3.15x3.05) - 69W (Tc) -55°C ~ 150°C (TJ)
G130N06S

G130N06S

MOSFET N-CH 60V 9A SOP-8

Goford Semiconductor

8,000 -
G130N06S

数据表

TrenchFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 9A (Tc) 4.5V, 10V 12mOhm @ 10A, 10V Surface Mount 2.5V @ 250µA - - ±20V - - - 8-SOP - 2.6W (Tc) -55°C ~ 150°C (TJ)
G050N03S

G050N03S

MOSFET N-CH 30V 18A SOP-8

Goford Semiconductor

8,000 -
G050N03S

数据表

TrenchFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 18A (Tc) 4.5V, 10V 5mOhm @ 10A, 10V Surface Mount 2.4V @ 250µA - - ±20V - - - 8-SOP - 2.1W (Tc) -55°C ~ 150°C (TJ)
GT060N04K

GT060N04K

MOSFET N-CH 40V 62A 70W TO-252

Goford Semiconductor

5,000 -
GT060N04K

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 54A (Tc) 4.5V, 10V 5.5mOhm @ 30A, 10V Surface Mount 2.3V @ 250µA 19 nC @ 10 V 40 V ±20V 1279 pF @ 20 V - - TO-252 - 44W (Tc) -55°C ~ 150°C (TJ)
GT110N06S

GT110N06S

MOSFET N-CH 60V 14A SOP-8

Goford Semiconductor

4,000 -
GT110N06S

数据表

SGT 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 14A (Tc) 4.5V, 10V 11mOhm @ 14A, 10V Surface Mount 2.4V @ 250µA - - ±20V - - - 8-SOP - 3W (Tc) -55°C ~ 150°C (TJ)
GT110N06D3

GT110N06D3

MOSFET N-CH 60V 35A DFN3*3-8L

Goford Semiconductor

20,000 -
GT110N06D3

数据表

SGT 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 35A (Tc) 4.5V, 10V 11mOhm @ 14A, 10V Surface Mount 2.4V @ 250µA - - ±20V - - - 8-DFN (3.15x3.05) - 25W (Tc) -55°C ~ 150°C (TJ)
G700P06T

G700P06T

MOSFET P-CH 60V 25A TO-220

Goford Semiconductor

3,000 -
G700P06T

数据表

TrenchFET® TO-220-3 Tube Active P-Channel MOSFET (Metal Oxide) 25A (Tc) 4.5V, 10V 70mOhm @ 4A, 10V Through Hole 2.5V @ 250µA - - ±20V - - - TO-220 - 100W (Tc) -55°C ~ 150°C (TJ)
G58N06K

G58N06K

MOSFET N-CH 60V 58A TO-252

Goford Semiconductor

2,500 -
G58N06K

数据表

TrenchFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 58A (Tc) 4.5V, 10V 13mOhm @ 30A, 10V Surface Mount 2.5V @ 250µA - - ±20V - - - TO-252 - 71W (Tc) -55°C ~ 150°C (TJ)
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