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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
18N10

18N10

MOSFET N-CH 100V 25A TO-252

Goford Semiconductor

50,000 -
18N10

数据表

TrenchFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 25A (Tc) 4.5V, 10V 53mOhm @ 10A, 10V Surface Mount 3V @ 250µA - - ±20V - - - TO-252 - 62.5W (Tc) -55°C ~ 150°C (TJ)
60N06

60N06

MOSFET N-CH 60V 50A TO-252

Goford Semiconductor

20,000 -
60N06

数据表

TrenchFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 50A (Tc) 4.5V, 10V 17mOhm @ 5A, 10V Surface Mount 2V @ 250µA - - ±20V - - - TO-252 - 69W (Tc) -55°C ~ 150°C (TJ)
G80N03K

G80N03K

MOSFET N-CH 30V 80A TO-252

Goford Semiconductor

10,000 -
G80N03K

数据表

TrenchFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80A (Tc) 4.5V, 10V 6.5mOhm @ 25A, 10V Surface Mount 2V @ 250µA - - ±20V - - - TO-252 - 69W (Tc) -55°C ~ 150°C (TJ)
G40P03K

G40P03K

MOSFET P-CH 30V 40A TO-252

Goford Semiconductor

2,500 -
G40P03K

数据表

TrenchFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 40A (Tc) 4.5V, 10V 9.5mOhm @ 15A, 10V Surface Mount 2.5V @ 250µA - - ±20V - - - TO-252 - 138W (Tc) -55°C ~ 150°C (TJ)
G60N04K

G60N04K

MOSFET N-CH 40V 60A TO-252

Goford Semiconductor

90,000 -
G60N04K

数据表

TrenchFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60A (Tc) 4.5V, 10V 7mOhm @ 30A, 10V Surface Mount 2.5V @ 250µA - - ±20V - - - TO-252 - 65W (Tc) -55°C ~ 150°C (TJ)
5N20A

5N20A

MOSFET N-CH 200V 5A TO-252

Goford Semiconductor

100,000 -
5N20A

数据表

TrenchFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 5A (Tc) 10V 580mOhm @ 2.5A, 10V Surface Mount 3V @ 250µA - - ±20V - - - TO-252 - 78W (Tc) -55°C ~ 150°C (TJ)
G33N03D52

G33N03D52

MOSFET N+N-CH 30V 33A DFN5*6-8L

Goford Semiconductor

5,000 -
G33N03D52

数据表

TrenchFET® 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 33A (Tc) 4.5V, 10V 13mOhm @ 16A, 10V Surface Mount 3V @ 250µA - - ±20V - - - 8-DFN (4.9x5.75) - 29W (Tc) -55°C ~ 150°C (TJ)
G40P03D5

G40P03D5

MOSFET P-CH 30V 35A DFN5*6-8L

Goford Semiconductor

5,000 -
G40P03D5

数据表

TrenchFET® 8-PowerTDFN Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 35A (Tc) 4.5V, 10V 10mOhm @ 20A, 10V Surface Mount 2.5V @ 250µA - - ±20V - - - 8-DFN (4.9x5.75) - 48W (Tc) -55°C ~ 150°C (TJ)
G140P04K

G140P04K

MOSFET P-CH 40V 45A 60W TO-252

Goford Semiconductor

2,500 -
G140P04K

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 45A (Tc) 10V 12mOhm @ 20A, 10V Surface Mount 4V @ 250µA 42 nC @ 10 V 40 V ±20V 2261 pF @ 20 V - - TO-252 - 60W (Tc) -55°C ~ 150°C (TJ)
G13P04S

G13P04S

MOSFET P-CH 40V 13A SOP-8

Goford Semiconductor

8,000 -
G13P04S

数据表

TrenchFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 13A (Tc) 10V 15mOhm @ 12A, 10V Surface Mount 2.5V @ 250µA - - ±20V - - - 8-SOP - 3W (Tc) -55°C ~ 150°C (TJ)
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