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场效应晶体管（FETs）、MOSFETs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗（最大值） | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
G700P06D3MOSFET P-CH 60V 18A 32W 70m(max) Goford Semiconductor |
5,000 | - |
|
数据表 |
G | 8-PowerVDFN | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 18A (Tc) | 4.5V, 10V | 70mOhm @ 4A, 10V | Surface Mount | 2.5V @ 250µA | 25 nC @ 10 V | 60 V | ±20V | 1446 pF @ 30 V | - | - | 8-DFN (3.15x3.05) | - | 32W (Tc) | -55°C ~ 150°C (TJ) |
|
G08N06SMOSFET N-CH 60V 5A SOP-8 Goford Semiconductor |
4,000 | - |
|
数据表 |
TrenchFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 5A (Tc) | 4.5V, 10V | 30mOhm @ 3A, 10V | Surface Mount | 2.5V @ 250µA | - | - | ±20V | - | - | - | 8-SOP | - | 2.1W (Tc) | -55°C ~ 150°C (TJ) |
|
|
G3K8N15HEMOSFET N-CH ESD 150V 2A SOT-223 Goford Semiconductor |
5,000 | - |
|
数据表 |
- | TO-261-4, TO-261AA | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 2A (Tc) | 4.5V, 10V | 370mOhm @ 2A, 10V | Surface Mount | 2.5V @ 250µA | 20 nC @ 10 V | 150 V | ±20V | 558 pF @ 75 V | - | - | SOT-223 | - | 2.16W (Tc) | -55°C ~ 150°C (TJ) |
|
|
GT095N04D3MOSFET N-CH 40V 47A DFN3*3-8L Goford Semiconductor |
60,000 | - |
|
数据表 |
- | 8-PowerVDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 47A (Tc) | 4.5V, 10V | 6mOhm @ 3A, 10V | Surface Mount | 2.5V @ 250µA | 23 nC @ 10 V | 40 V | ±20V | 947 pF @ 20 V | - | - | 8-DFN (3.15x3.05) | - | 22.7W (Tc) | -55°C ~ 150°C (TJ) |
|
|
GT100N04D3MOSFET N-CH 40V 13A DFN3*3-8L Goford Semiconductor |
10,000 | - |
|
数据表 |
SGT | 8-PowerVDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 13A (Tc) | 4.5V, 10V | 10mOhm @ 5A, 10V | Surface Mount | 2.5V @ 250µA | - | - | ±20V | - | - | - | 8-DFN (3.15x3.05) | - | 23W (Tc) | -55°C ~ 150°C (TJ) |
|
|
GT6K2P10KHMOSFET P-CH 100V 4.3A TO-252 Goford Semiconductor |
15,000 | - |
|
数据表 |
SGT | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 4.3A (Tc) | 10V | 670mOhm @ 1A, 10V | Surface Mount | 3V @ 250µA | - | - | ±20V | - | - | - | TO-252 | - | 25W (Tc) | -55°C ~ 150°C (TJ) |
|
G10N10AMOSFET N-CH 100V 10A TO-252 Goford Semiconductor |
15,000 | - |
|
数据表 |
TrenchFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 10A (Tc) | 4.5V, 10V | 130mOhm @ 2A, 10V | Surface Mount | 3V @ 250µA | - | - | ±20V | - | - | - | TO-252 | - | 28W (Tc) | -55°C ~ 150°C (TJ) |
|
|
G35N02KMOSFET N-CH 20V 35A TO-252 Goford Semiconductor |
10,000 | - |
|
数据表 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 35A (Tc) | 2.5V, 4.5V | 13mOhm @ 20A, 4.5V | Surface Mount | 1.2V @ 250µA | 24 nC @ 4.5 V | 20 V | ±12V | 1380 pF @ 10 V | - | - | TO-252 | - | 40W (Tc) | -55°C ~ 150°C (TJ) |
|
|
G15N06KMOSFET N-CH 60V 15A TO-252 Goford Semiconductor |
5,000 | - |
|
数据表 |
TrenchFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 15A (Tc) | 4.5V, 10V | 45mOhm @ 8A, 10V | Surface Mount | 3V @ 250µA | - | - | ±20V | - | - | - | TO-252 | - | 40W (Tc) | -55°C ~ 150°C (TJ) |
|
|
G170P03D3MOSFET P-CH 30V 30A DFN3*3-8L Goford Semiconductor |
20,000 | - |
|
数据表 |
TrenchFET® | 8-PowerVDFN | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 30A (Tc) | 4.5V, 10V | 15mOhm @ 5A, 10V | Surface Mount | 2.5V @ 250µA | - | - | ±20V | - | - | - | 8-DFN (3.15x3.05) | - | 15W (Tc) | -55°C ~ 150°C (TJ) |
