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场效应晶体管（FETs）、MOSFETs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗（最大值） | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
G29MOSFET P-CH 15V 4.1A SOT-23 Goford Semiconductor |
60,000 | - |
|
数据表 |
TrenchFET® | TO-236-3, SC-59, SOT-23-3 | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 4.1A (Tc) | 2.5V, 4.5V | 30mOhm @ 3A, 4.5V | Surface Mount | 900mV @ 250µA | - | - | ±12V | - | - | - | SOT-23-3 | - | 1.05W (Tc) | -55°C ~ 150°C (TJ) |
|
G1K1P06LHMOSFET P-CH 60V 4.5A SOT-23-3L Goford Semiconductor |
21,000 | - |
|
数据表 |
- | TO-236-3, SC-59, SOT-23-3 | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 4.5A (Tc) | 10V | 110mOhm @ -3A,- 10V | Surface Mount | 4V @ 250µA | 11 nC @ -10 V | 60 V | ±20V | 970 pF @ -30 V | - | - | SOT-23-3 | - | 3.1W (Tc) | -55°C ~ 150°C (TJ) |
|
GT1003DMOSFET N-CH 100V 3A SOT-23-3L Goford Semiconductor |
300,000 | - |
|
数据表 |
SGT | TO-236-3, SC-59, SOT-23-3 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 3A (Tc) | 4.5V, 10V | 130mOhm @ 3A, 10V | Surface Mount | 2.6V @ 250µA | - | - | ±20V | - | - | - | SOT-23-3 | - | 2W (Tc) | -55°C ~ 150°C (TJ) |
|
|
G6N02LMOSFET N-CH 20V 6A SOT-23-3L Goford Semiconductor |
100,000 | - |
|
数据表 |
TrenchFET® | TO-236-3, SC-59, SOT-23-3 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 6A (Tc) | 2.5V, 4.5V | 11.3mOhm @ 3A, 4.5V | Surface Mount | 900mV @ 250µA | - | - | ±12V | - | - | - | SOT-23-3 | - | 1.8W (Tc) | -55°C ~ 150°C (TJ) |
|
|
GT800N10LMOSFET N-CH 100V 3.5A SOT-23-3L Goford Semiconductor |
24,000 | - |
|
数据表 |
- | TO-236-3, SC-59, SOT-23-3 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 3.5A (Tc) | 4.5V, 10V | 80mOhm @ 2A, 10V | Surface Mount | 3V @ 250µA | 5 nC @ 10 V | 100 V | ±20V | 209 pF @ 50 V | - | - | SOT-23-3 | - | 1.7W (Tc) | -55°C ~ 150°C (TJ) |
|
|
GT1003AMOSFET N-CH 100V 3A SOT-23-3L Goford Semiconductor |
102,000 | - |
|
数据表 |
SGT | TO-236-3, SC-59, SOT-23-3 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 3A (Tc) | 10V | 140mOhm @ 3A, 10V | Surface Mount | 3V @ 250µA | - | - | ±20V | - | - | - | SOT-23-3 | - | 1.6W (Tc) | -55°C ~ 150°C (TJ) |
|
|
G1K1P06LLMOSFET P-CH 60V 3A SOT-23-6L Goford Semiconductor |
15,000 | - |
|
数据表 |
TrenchFET® | SOT-23-6 | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 3A (Tc) | 4.5V, 10V | 110mOhm @ 2A, 10V | Surface Mount | 2.5V @ 250µA | - | - | ±20V | - | - | - | SOT-23-6L | - | 1.5W (Tc) | -55°C ~ 150°C (TJ) |
|
|
G1K3N10LLMOSFET N-CH 100V 3.4A SOT-23-6L Goford Semiconductor |
9,000 | - |
|
数据表 |
- | SOT-23-6 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 3.4A (Tc) | 4.5V, 10V | 130mOhm @ 1A, 10V | Surface Mount | 2.5V @ 250µA | 22 nC @ 10 V | 100 V | ±20V | 808 pF @ 50 V | - | - | SOT-23-6L | - | 2.28W (Tc) | -55°C ~ 150°C (TJ) |
|
|
G300N04D3MOSFET N-CH 40V 6A DFN3*3-8L Goford Semiconductor |
35,000 | - |
|
数据表 |
- | 8-PowerVDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 6A (Tc) | 4.5V, 10V | 30mOhm @ 3A, 10V | Surface Mount | 2.5V @ 250µA | 10 nC @ 10 V | 40 V | ±20V | 479 pF @ 20 V | - | - | 8-DFN (3.15x3.05) | - | 1.25W (Tc) | -55°C ~ 150°C (TJ) |
|
|
G66MOSFET P-CH 16V 5.8A DFN2*2-6L Goford Semiconductor |
50,000 | - |
|
数据表 |
TrenchFET® | 6-WDFN Exposed Pad | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 5.8A (Tc) | 2.5V, 4.5V | 45mOhm @ 4.1A, 4.5V | Surface Mount | 1V @ 250µA | - | - | ±8V | - | - | - | 6-DFN (2x2) | - | 1.7W (Tc) | -55°C ~ 150°C (TJ) |
