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场效应晶体管（FETs）、MOSFETs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗（最大值） | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
2301HMOSFET P-CH 30V 2.8A SOT-23 Goford Semiconductor |
15,000 | - |
|
数据表 |
TrenchFET® | TO-236-3, SC-59, SOT-23-3 | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 2.8A (Tc) | 4.5V, 10V | 75mOhm @ 3A, 10V | Surface Mount | 2.4V @ 250µA | - | - | ±20V | - | - | - | SOT-23-3 | - | 890mW (Tc) | -55°C ~ 150°C (TJ) |
|
G60KN30IMOSFET N-CH 300V 0.3A SOT-23 Goford Semiconductor |
3,000 | - |
|
数据表 |
- | TO-236-3, SC-59, SOT-23-3 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 300mA (Tc) | 10V | 5.4Ohm @ 300mA, 10V | Surface Mount | 4V @ 250µA | 2.5 nC @ 10 V | 300 V | ±30V | 68 pF @ 150 V | - | - | SOT-23-3 | - | 710mW (Tc) | -55°C ~ 150°C (TJ) |
|
|
G2305MOSFET P-CH 20V 4.8A SOT-23 Goford Semiconductor |
90,000 | - |
|
数据表 |
TrenchFET® | TO-236-3, SC-59, SOT-23-3 | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 4.8A (Tc) | 2.5V, 4.5V | 46mOhm @ 4.1A, 4.5V | Surface Mount | 900mV @ 250µA | - | - | ±10V | - | - | - | SOT-23-3 | - | 1.7W (Tc) | -55°C ~ 150°C (TJ) |
|
G1002MOSFET N-CH 100V 2A SOT-23 Goford Semiconductor |
30,000 | - |
|
数据表 |
TrenchFET® | TO-236-3, SC-59, SOT-23-3 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 2A (Tc) | 4.5V, 10V | 250mOhm @ 2A, 10V | Surface Mount | 3V @ 250µA | 10 nC @ 10 V | 100 V | ±20V | 535 pF @ 50 V | - | - | SOT-23-3 | - | 1.3W (Tc) | -55°C ~ 150°C (TJ) |
|
|
G3404BMOSFET N-CH 30V 5.6A SOT-23 Goford Semiconductor |
21,000 | - |
|
数据表 |
TrenchFET® | TO-236-3, SC-59, SOT-23-3 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 5.6A (Tc) | 4.5V, 10V | 22mOhm @ 4.2A, 10V | Surface Mount | 2V @ 250µA | - | - | ±20V | - | - | - | SOT-23-3 | - | 1.2W (Tc) | -55°C ~ 150°C (TJ) |
|
|
G3416MOSFET N-CH ESD 20V 6A SOT-23 Goford Semiconductor |
39,000 | - |
|
数据表 |
- | TO-236-3, SC-59, SOT-23-3 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 6A (Tc) | 2.5V, 4.5V | 20mOhm @ 3A, 4.5V | Surface Mount | 1.3V @ 250µA | 15 nC @ 10 V | 20 V | ±12V | 748 pF @ 10 V | - | - | SOT-23-3 | - | 1.3W (Tc) | -55°C ~ 150°C (TJ) |
|
|
3400MOSFET N-CH 30V 5.6A SOT-23 Goford Semiconductor |
300,000 | - |
|
数据表 |
TrenchFET® | TO-236-3, SC-59, SOT-23-3 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 5.6A (Tc) | 4.5V, 10V | 59mOhm @ 2.8A, 2.5V | Surface Mount | 1.4V @ 250µA | - | - | ±12V | - | - | - | SOT-23-3 | - | 1.4W (Tc) | -55°C ~ 150°C (TJ) |
|
|
3415AMOSFET P-CH ESD 20V 4A SOT-23 Goford Semiconductor |
60,000 | - |
|
数据表 |
TrenchFET® | TO-236-3, SC-59, SOT-23-3 | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 4A (Tc) | 2.5V, 4.5V | 45mOhm @ 4A, 4.5V | Surface Mount | 1.1V @ 250µA | - | - | ±10V | - | - | - | SOT-23-3 | - | 1.4W (Tc) | -55°C ~ 150°C (TJ) |
|
|
G06P01EMOSFET P-CH ESD 12V 4A SOT-23 Goford Semiconductor |
9,000 | - |
|
数据表 |
TrenchFET® | TO-236-3, SC-59, SOT-23-3 | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 4A (Tc) | 1.8V, 4.5V | 28mOhm @ 3A, 4.5V | Surface Mount | 1V @ 250µA | - | - | ±10V | - | - | - | SOT-23-3 | - | 1.8W (Tc) | -55°C ~ 150°C (TJ) |
|
|
G500P03IEMOSFET P-CH ESD 30V 4.6A SOT-23 Goford Semiconductor |
3,000 | - |
|
数据表 |
- | TO-236-3, SC-59, SOT-23-3 | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 4.6A (Tc) | 2.5V, 4.5V, 10V | 55mOhm @ 4A, 10V | Surface Mount | 1.3V @ 250µA | 13 nC @ 10 V | 30 V | ±12V | 680 pF @ 15 V | - | - | SOT-23-3 | - | 1.4W (Tc) | -55°C ~ 150°C (TJ) |
