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场效应晶体管（FET）、MOSFET 阵列
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 配置 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | FET 特性 | 输入电容 (Ciss)（最大值）@ Vds | 功率 - 最大值 | 供应商设备封装 | 工作温度 | 安装类型 | 等级 | 认证 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IPG20N04S412AATMA1MOSFET 2N-CH 40V 20A 8TDSON Infineon Technologies |
28,528 | - |
|
数据表 |
OptiMOS™ | 8-PowerVDFN | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | 40V | 20A | 12.2mOhm @ 17A, 10V | 4V @ 15µA | 18nC @ 10V | - | 1470pF @ 25V | 41W | PG-TDSON-8-10 | -55°C ~ 175°C (TJ) | Surface Mount, Wettable Flank | Automotive | AEC-Q101 |
|
IPG20N06S4L26AATMA1MOSFET 2N-CH 60V 20A 8TDSON Infineon Technologies |
4,717 | - |
|
数据表 |
OptiMOS™ | 8-PowerVDFN | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | 60V | 20A | 26mOhm @ 17A, 10V | 2.2V @ 10µA | 20nC @ 10V | Logic Level Gate | 1430pF @ 25V | 33W | PG-TDSON-8-10 | -55°C ~ 175°C (TJ) | Surface Mount, Wettable Flank | Automotive | AEC-Q101 |
|
IPG20N06S2L35ATMA1MOSFET 2N-CH 55V 20A 8TDSON Infineon Technologies |
14,440 | - |
|
数据表 |
OptiMOS™ | 8-PowerVDFN | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | 55V | 20A | 35mOhm @ 15A, 10V | 2V @ 27µA | 23nC @ 10V | Logic Level Gate | 790pF @ 25V | 65W | PG-TDSON-8-4 | -55°C ~ 175°C (TJ) | Surface Mount | Automotive | AEC-Q101 |
|
|
IPG20N06S2L35AATMA1MOSFET 2N-CH 55V 20A 8TDSON Infineon Technologies |
14,700 | - |
|
数据表 |
OptiMOS™ | 8-PowerVDFN | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | 55V | 20A (Tc) | 35mOhm @ 15A, 10V | 2V @ 27µA | 23nC @ 10V | Logic Level Gate | 790pF @ 25V | 65W | PG-TDSON-8-10 | -55°C ~ 175°C (TJ) | Surface Mount, Wettable Flank | Automotive | AEC-Q101 |
|
|
IPG20N10S4L35AATMA1MOSFET 2N-CH 100V 20A 8TDSON Infineon Technologies |
3,095 | - |
|
数据表 |
OptiMOS™ | 8-PowerVDFN | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | 100V | 20A | 35mOhm @ 17A, 10V | 2.1V @ 16µA | 17.4nC @ 10V | Logic Level Gate | 1105pF @ 25V | 43W | PG-TDSON-8-10 | -55°C ~ 175°C (TJ) | Surface Mount, Wettable Flank | Automotive | AEC-Q101 |
|
BSC0993NDATMA1MOSFET 2N-CH 17A TISON8 Infineon Technologies |
5,035 | - |
|
数据表 |
OptiMOS™ | 8-PowerTDFN | Tape & Reel (TR) | Not For New Designs | MOSFET (Metal Oxide) | 2 N-Channel | - | 17A (Ta) | 5mOhm @ 7A, 10V | 2V @ 250µA | - | - | - | - | PG-TISON-8 | -55°C ~ 150°C (TJ) | Surface Mount | - | - |
|
|
BSC0911NDATMA1MOSFET 2N-CH 25V 18A/30A TISON8 Infineon Technologies |
9,890 | - |
|
数据表 |
OptiMOS™ | 8-PowerTDFN | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) Asymmetrical | 25V | 18A, 30A | 3.2mOhm @ 20A, 10V | 2V @ 250µA | 12nC @ 4.5V | Logic Level Gate, 4.5V Drive | 1600pF @ 12V | 1W | PG-TISON-8 | -55°C ~ 150°C (TJ) | Surface Mount | - | - |
|
|
BSC076N04NDATMA1MOSFET 2N-CH 40V 20A 8TDSON Infineon Technologies |
4,460 | - |
|
数据表 |
OptiMOS™ T2 | 8-PowerVDFN | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | 40V | 20A (Tc) | 7.6mOhm @ 17A, 10V | 4V @ 30µA | 38nC @ 10V | - | 2950pF @ 20V | 2.3W (Ta), 65W (Tc) | PG-TDSON-8-4 | -55°C ~ 175°C (TJ) | Surface Mount | - | - |
|
IAUC60N04S6L030HATMA1MOSFET 2N-CH 40V 60A 8TDSON Infineon Technologies |
5,572 | - |
|
数据表 |
OptiMOS™ | 8-PowerVDFN | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 N-Channel (Half Bridge) | 40V | 60A (Tj) | 3mOhm @ 30A, 10V | 2V @ 25µA | 35nC @ 10V | Logic Level Gate | 2128pF @ 25V | 75W (Tc) | PG-TDSON-8-56 | -55°C ~ 175°C (TJ) | Surface Mount | Automotive | AEC-Q101 |
|
|
BSC0910NDIATMA1MOSFET 2N-CH 25V 11A/31A TISON8 Infineon Technologies |
10,482 | - |
|
数据表 |
OptiMOS™ | 8-PowerTDFN | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) Asymmetrical | 25V | 11A, 31A | 4.6mOhm @ 25A, 10V | 2V @ 250µA | 6.6nC @ 4.5V | Logic Level Gate, 4.5V Drive | 4500pF @ 12V | 1W | PG-TISON-8 | -55°C ~ 150°C (TJ) | Surface Mount | - | - |
