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场效应晶体管（FET）、MOSFET 阵列
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 配置 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | FET 特性 | 输入电容 (Ciss)（最大值）@ Vds | 功率 - 最大值 | 供应商设备封装 | 工作温度 | 安装类型 | 等级 | 认证 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
BSC0924NDIATMA1MOSFET 2N-CH 30V 17A/32A TISON8 Infineon Technologies |
74,634 | - |
|
数据表 |
OptiMOS™ | 8-PowerTDFN | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) Asymmetrical | 30V | 17A, 32A | 5mOhm @ 20A, 10V | 2V @ 250µA | 10nC @ 4.5V | Logic Level Gate, 4.5V Drive | 1160pF @ 15V | 1W | PG-TISON-8 | -55°C ~ 150°C (TJ) | Surface Mount | - | - |
|
IAUC60N04S6N050HATMA1MOSFET 2N-CH 40V 60A 8TDSON Infineon Technologies |
731 | - |
|
数据表 |
OptiMOS™ | 8-PowerVDFN | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 N-Channel (Half Bridge) | 40V | 60A (Tj) | 5mOhm @ 30A, 10V | 3V @ 13µA | 17nC @ 10V | - | 1027pF @ 25V | 52W (Tc) | PG-TDSON-8-57 | -55°C ~ 175°C (TJ) | Surface Mount | Automotive | AEC-Q101 |
|
|
BSC0923NDIATMA1MOSFET 2N-CH 30V 17A/32A TISON8 Infineon Technologies |
4,089 | - |
|
数据表 |
OptiMOS™ | 8-PowerTDFN | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) Asymmetrical | 30V | 17A, 32A | 5mOhm @ 20A, 10V | 2V @ 250µA | 10nC @ 4.5V | Logic Level Gate, 4.5V Drive | 1160pF @ 15V | 1W | PG-TISON-8 | -55°C ~ 150°C (TJ) | Surface Mount | - | - |
|
IPG20N06S415ATMA2MOSFET 2N-CH 60V 20A 8TDSON Infineon Technologies |
3,573 | - |
|
数据表 |
OptiMOS™ | 8-PowerVDFN | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | 60V | 20A | 15.5mOhm @ 17A, 10V | 4V @ 20µA | 29nC @ 10V | - | 2260pF @ 25V | 50W | PG-TDSON-8-4 | -55°C ~ 175°C (TJ) | Surface Mount | Automotive | AEC-Q101 |
|
IPG20N06S4L14AATMA1MOSFET 2N-CH 60V 20A 8TDSON Infineon Technologies |
29,812 | - |
|
数据表 |
OptiMOS™ | 8-PowerVDFN | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | 60V | 20A | 13.7mOhm @ 17A, 10V | 2.2V @ 20µA | 39nC @ 10V | Logic Level Gate | 2890pF @ 25V | 50W | PG-TDSON-8-10 | -55°C ~ 175°C (TJ) | Surface Mount, Wettable Flank | Automotive | AEC-Q101 |
|
|
IPG20N04S408ATMA1MOSFET 2N-CH 40V 20A 8TDSON Infineon Technologies |
13,439 | - |
|
数据表 |
OptiMOS™ | 8-PowerVDFN | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | 40V | 20A | 7.6mOhm @ 17A, 10V | 4V @ 30µA | 36nC @ 10V | - | 2940pF @ 25V | 65W | PG-TDSON-8-4 | -55°C ~ 175°C (TJ) | Surface Mount | - | - |
|
|
BSC155N06NDATMA1MOSFET 2N-CH 60V 20A 8TDSON Infineon Technologies |
7,129 | - |
|
数据表 |
OptiMOS™ T2 | 8-PowerVDFN | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | 60V | 20A (Tc) | 15.5mOhm @ 17A, 10V | 4V @ 20µA | 29nC @ 10V | - | 2250pF @ 30V | 50W (Tc) | PG-TDSON-8-4 | -55°C ~ 175°C (TJ) | Surface Mount | - | - |
|
IPG20N06S4L11ATMA2MOSFET 2N-CH 60V 20A 8TDSON Infineon Technologies |
41,669 | - |
|
数据表 |
OptiMOS™ | 8-PowerVDFN | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | 60V | 20A (Tc) | 11.2mOhm @ 17A, 10V | 2.2V @ 28µA | 53nC @ 10V | Logic Level Gate | 4020pF @ 25V | 65W (Tc) | PG-TDSON-8-10 | -55°C ~ 175°C (TJ) | Surface Mount, Wettable Flank | Automotive | AEC-Q101 |
|
|
IPG20N10S4L22AATMA1MOSFET 2N-CH 100V 20A 8TDSON Infineon Technologies |
21,565 | - |
|
数据表 |
OptiMOS™ | 8-PowerVDFN | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | 100V | 20A | 22mOhm @ 17A, 10V | 2.1V @ 25µA | 27nC @ 10V | Logic Level Gate | 1755pF @ 25V | 60W | PG-TDSON-8-10 | -55°C ~ 175°C (TJ) | Surface Mount, Wettable Flank | - | - |
|
|
BSG0810NDIATMA1MOSFET 2N-CH 25V 19A/39A TISON8 Infineon Technologies |
7,490 | - |
|
数据表 |
OptiMOS™ | 8-PowerTDFN | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) Asymmetrical | 25V | 19A, 39A | 3mOhm @ 20A, 10V | 2V @ 250µA | 8.4nC @ 4.5V | Logic Level Gate, 4.5V Drive | 1040pF @ 12V | 2.5W | PG-TISON-8 | -55°C ~ 155°C (TJ) | Surface Mount | - | - |
