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场效应晶体管（FET）、MOSFET 阵列
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 配置 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | FET 特性 | 输入电容 (Ciss)（最大值）@ Vds | 功率 - 最大值 | 供应商设备封装 | 工作温度 | 安装类型 | 等级 | 认证 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
2N7002DWH6327XTSA1MOSFET 2N-CH 60V 0.3A SOT363 Infineon Technologies |
48,669 | - |
|
数据表 |
OptiMOS™ | 6-VSSOP, SC-88, SOT-363 | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | 60V | 300mA | 3Ohm @ 500mA, 10V | 2.5V @ 250µA | 0.6nC @ 10V | Logic Level Gate | 20pF @ 25V | 500mW | PG-SOT363-PO | -55°C ~ 150°C (TJ) | Surface Mount | - | - |
|
BSD840NH6327XTSA1MOSFET 2N-CH 20V 0.88A SOT363 Infineon Technologies |
50,426 | - |
|
数据表 |
OptiMOS™ | 6-VSSOP, SC-88, SOT-363 | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | 20V | 880mA | 400mOhm @ 880mA, 2.5V | 750mV @ 1.6µA | 0.26nC @ 2.5V | Logic Level Gate | 78pF @ 10V | 500mW | PG-SOT363-PO | -55°C ~ 150°C (TJ) | Surface Mount | - | - |
|
IRF9389TRPBFMOSFET N/P-CH 30V 6.8A/4.6A 8SO Infineon Technologies |
22,273 | - |
|
数据表 |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | N and P-Channel | 30V | 6.8A, 4.6A | 27mOhm @ 6.8A, 10V | 2.3V @ 10µA | 14nC @ 10V | Logic Level Gate | 398pF @ 15V | 2W | 8-SO | -55°C ~ 150°C (TJ) | Surface Mount | - | - |
|
IRLHS6376TRPBFMOSFET 2N-CH 30V 3.6A PQFN Infineon Technologies |
122,321 | - |
|
数据表 |
HEXFET® | 6-PowerVDFN | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | 30V | 3.6A | 63mOhm @ 3.4A, 4.5V | 1.1V @ 10µA | 2.8nC @ 4.5V | Logic Level Gate | 270pF @ 25V | 1.5W | 6-PQFN Dual (2x2) | -55°C ~ 150°C (TJ) | Surface Mount | - | - |
|
IRF7503TRPBFMOSFET 2N-CH 30V 2.4A MICRO8 Infineon Technologies |
87,699 | - |
|
数据表 |
HEXFET® | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) | Tape & Reel (TR) | Last Time Buy | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | 30V | 2.4A | 135mOhm @ 1.7A, 10V | 1V @ 250µA | 12nC @ 10V | Logic Level Gate | 210pF @ 25V | 1.25W | Micro8™ | -55°C ~ 150°C (TJ) | Surface Mount | - | - |
|
|
IRF7103TRPBFMOSFET 2N-CH 50V 3A 8SO Infineon Technologies |
7,628 | - |
|
数据表 |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | 50V | 3A | 130mOhm @ 3A, 10V | 3V @ 250µA | 30nC @ 10V | - | 290pF @ 25V | 2W | 8-SO | -55°C ~ 150°C (TJ) | Surface Mount | - | - |
|
|
IRF7509TRPBFMOSFET N/P-CH 30V 2.7A/2A MICRO8 Infineon Technologies |
1,102 | - |
|
数据表 |
HEXFET® | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) | Tape & Reel (TR) | Last Time Buy | MOSFET (Metal Oxide) | N and P-Channel | 30V | 2.7A, 2A | 110mOhm @ 1.7A, 10V | 1V @ 250µA | 12nC @ 10V | Logic Level Gate | 210pF @ 25V | 1.25W | Micro8™ | -55°C ~ 150°C (TJ) | Surface Mount | - | - |
|
|
IRF7309TRPBFMOSFET N/P-CH 30V 4A/3A 8SO Infineon Technologies |
17,674 | - |
|
数据表 |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | N and P-Channel | 30V | 4A, 3A | 50mOhm @ 2.4A, 10V | 1V @ 250µA | 25nC @ 4.5V | - | 520pF @ 15V | 1.4W | 8-SO | -55°C ~ 150°C (TJ) | Surface Mount | - | - |
|
|
IRF7313TRPBFMOSFET 2N-CH 30V 6.5A 8SO Infineon Technologies |
7,155 | - |
|
数据表 |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | 30V | 6.5A | 29mOhm @ 5.8A, 10V | 1V @ 250µA | 33nC @ 10V | - | 650pF @ 25V | 2W | 8-SO | -55°C ~ 150°C (TJ) | Surface Mount | - | - |
|
|
IRF7306TRPBFMOSFET 2P-CH 30V 3.6A 8SO Infineon Technologies |
16,544 | - |
|
数据表 |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 P-Channel (Dual) | 30V | 3.6A | 100mOhm @ 1.8A, 10V | 1V @ 250µA | 25nC @ 10V | Logic Level Gate | 440pF @ 25V | 2W | 8-SO | -55°C ~ 150°C (TJ) | Surface Mount | - | - |
