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场效应晶体管（FET）、MOSFET 阵列
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 配置 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | FET 特性 | 输入电容 (Ciss)（最大值）@ Vds | 功率 - 最大值 | 供应商设备封装 | 工作温度 | 安装类型 | 等级 | 认证 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
BSZ0907NDXTMA2MOSFET 2N-CH 30V 6.7A WISON-8 Infineon Technologies |
5,671 | - |
|
数据表 |
OptiMOS™ | 8-PowerVDFN | Tape & Reel (TR) | Obsolete | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | 30V | 6.7A (Ta), 8.5A (Ta) | 9.5mOhm @ 9A, 10V, 7.2mOhm @ 9A, 10V | 2V @ 250µA | 6.4nC @ 4.5V, 7.9nC @ 4.5V | Logic Level Gate, 4.5V Drive | 730pF @ 15V, 900pF @ 15V | 700mW (Ta), 860mW (Ta) | PG-WISON-8 | -55°C ~ 150°C (TJ) | Surface Mount | - | - |
|
|
BSZ0908NDXTMA2MOSFET 2N-CH 30V 4.8A WISON-8 Infineon Technologies |
8,683 | - |
|
数据表 |
OptiMOS™ | 8-PowerVDFN | Tape & Reel (TR) | Obsolete | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | 30V | 4.8A (Ta), 7.6A (Ta) | 18mOhm @ 9A, 10V, 9mOhm @ 9A, 10V | 2V @ 250µA | 3nC @ 4.5V, 6.4nC @ 4.5V | Logic Level Gate, 4.5V Drive | 340pF @ 15V, 730pF @ 15V | 700mW (Ta), 860mW (Ta) | PG-WISON-8 | -55°C ~ 150°C (TJ) | Surface Mount | - | - |
|
|
FF1MR12KM1HPMOSFET Infineon Technologies |
2,689 | - |
|
数据表 |
- | - | Tray | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
IRF8910TRPBF-1MOSFET 2N-CH 20V 10A 8SO Infineon Technologies |
8,835 | - |
|
数据表 |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Bulk | Obsolete | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | 20V | 10A (Ta) | 13.4mOhm @ 10A, 10V | 2.55V @ 250µA | 11nC @ 4.5V | - | 960pF @ 10V | 2W (Ta) | 8-SO | -55°C ~ 150°C (TJ) | Surface Mount | - | - |
|
|
IPG20N06S2L65AAUMA1MOSFET 2N-CH 55V 20A 8TDSON Infineon Technologies |
6,516 | - |
|
数据表 |
OptiMOS™ | 8-PowerVDFN | Bulk | Obsolete | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | 55V | 20A (Tc) | 65mOhm @ 15A, 10V | 2V @ 14µA | 12nC @ 10V | Logic Level Gate | 410pF @ 25V | 43W (Tc) | PG-TDSON-8-10 | -55°C ~ 175°C (TJ) | Surface Mount, Wettable Flank | - | - |
|
|
IPG20N06S2L65AUMA1MOSFET Infineon Technologies |
6,688 | - |
|
数据表 |
- | - | Bulk | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
