订单满￥1000免运费
24小时咨询热线
0755 83957878
场效应晶体管（FET）、MOSFET 阵列
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 配置 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | FET 特性 | 输入电容 (Ciss)（最大值）@ Vds | 功率 - 最大值 | 供应商设备封装 | 工作温度 | 安装类型 | 等级 | 认证 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IRFI4019H-117PXKMA1MOSFET 2N-CH 150V 8.7A TO220-5 Infineon Technologies |
363 | - |
|
数据表 |
- | TO-220-5 Full Pack, Formed Leads | Tube | Last Time Buy | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | 150V | 8.7A (Tc) | 95mOhm @ 5.2A, 10V | 4.9V @ 50µA | 20nC @ 10V | - | 810pF @ 25V | 18W (Tc) | TO-220-5 Full-Pak | -55°C ~ 150°C (TJ) | Through Hole | - | - |
|
IRFH4253DTRPBFMOSFET 2N-CH 25V 64A/145A PQFN Infineon Technologies |
4,687 | - |
|
数据表 |
HEXFET® | 8-PowerVDFN | Tape & Reel (TR) | Not For New Designs | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | 25V | 64A, 145A | 3.2mOhm @ 30A, 10V | 2.1V @ 35µA | 15nC @ 4.5V | Logic Level Gate | 1314pF @ 13V | 31W, 50W | PQFN (5x6) | -55°C ~ 150°C (TJ) | Surface Mount | - | - |
|
|
IRFI4020H-117PXKMA1MOSFET 2N-CH 200V 9.1A TO220-5 Infineon Technologies |
768 | - |
|
数据表 |
- | TO-220-5 Full Pack, Formed Leads | Tube | Last Time Buy | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | 200V | 9.1A (Tc) | 100mOhm @ 5.5A, 10V | 4.9V @ 100µA | 29nC @ 10V | - | 1240pF @ 25V | 21W (Tc) | TO-220-5 Full-Pak | -55°C ~ 150°C (TJ) | Through Hole | - | - |
|
|
ISG0616N10NM5HSCATMA1MOSFET 2N-CH 100V 19A 10WHITFN Infineon Technologies |
2,464 | - |
|
数据表 |
OptiMOS™ 5 | 10-PowerWDFN | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 N-Channel (Half Bridge) | 100V | 19A (Ta), 139A (Tc) | 4mOhm @ 50A, 10V | 3.8V @ 85µA | 78nC @ 10V | - | 4800pF @ 50V | 3W (Ta), 167W (Tc) | PG-WHITFN-10-1 | -55°C ~ 175°C (TJ) | Surface Mount | - | - |
|
|
FF8MR12W1M1HB11BPSA1MOSFET 1200V AG-EASY1B Infineon Technologies |
34 | - |
|
数据表 |
CoolSiC™ | Module | Tray | Active | Silicon Carbide (SiC) | - | 1200V (1.2kV) | - | - | - | - | - | - | - | AG-EASY1B | - | Chassis Mount | - | - |
|
IRFHS9351TRPBFMOSFET 2P-CH 30V 2.3A PQFN Infineon Technologies |
12,698 | - |
|
数据表 |
HEXFET® | 6-PowerVDFN | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 P-Channel (Dual) | 30V | 2.3A | 170mOhm @ 3.1A, 10V | 2.4V @ 10µA | 3.7nC @ 10V | Logic Level Gate | 160pF @ 25V | 1.4W | 6-PQFN Dual (2x2) | -55°C ~ 150°C (TJ) | Surface Mount | - | - |
|
BSC0925NDATMA1MOSFET 2N-CH 30V 15A TISON8 Infineon Technologies |
8,328 | - |
|
数据表 |
OptiMOS™ | 8-PowerTDFN | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 N-Channel (Half Bridge) | 30V | 15A | 5mOhm @ 20A, 10V | 2V @ 250µA | 17nC @ 10V | - | 1157pF @ 15V | 2.5W | PG-TISON-8 | -55°C ~ 150°C (TJ) | Surface Mount | - | - |
|
IRF7104TRPBFMOSFET 2P-CH 20V 2.3A 8SO Infineon Technologies |
1,851 | - |
|
数据表 |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Not For New Designs | MOSFET (Metal Oxide) | 2 P-Channel (Dual) | 20V | 2.3A | 250mOhm @ 1A, 10V | 3V @ 250µA | 25nC @ 10V | Logic Level Gate | 290pF @ 15V | 2W | 8-SO | -55°C ~ 150°C (TJ) | Surface Mount | - | - |
|
IPG20N06S2L65ATMA1MOSFET 2N-CH 55V 20A 8TDSON Infineon Technologies |
26,581 | - |
|
数据表 |
OptiMOS™ | 8-PowerVDFN | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | 55V | 20A | 65mOhm @ 15A, 10V | 2V @ 14µA | 12nC @ 10V | Logic Level Gate | 410pF @ 25V | 43W | PG-TDSON-8-4 | -55°C ~ 175°C (TJ) | Surface Mount | Automotive | AEC-Q101 |
|
IPG20N06S2L65AATMA1MOSFET 2N-CH 55V 20A 8TDSON Infineon Technologies |
13,698 | - |
|
数据表 |
OptiMOS™ | 8-PowerVDFN | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | 55V | 20A | 65mOhm @ 15A, 10V | 2V @ 14µA | 12nC @ 10V | Logic Level Gate | 410pF @ 25V | 43W | PG-TDSON-8-10 | -55°C ~ 175°C (TJ) | Surface Mount, Wettable Flank | Automotive | AEC-Q101 |
