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场效应晶体管（FET）、MOSFET 阵列
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 配置 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | FET 特性 | 输入电容 (Ciss)（最大值）@ Vds | 功率 - 最大值 | 供应商设备封装 | 工作温度 | 安装类型 | 等级 | 认证 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
ISA150233C03LMDSXTMAISA150233C03LMDSXTMA Infineon Technologies |
500 | - |
|
数据表 |
OptiMOS™ 3 | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | N and P-Channel | 30V | 7.6A (Ta), 10.2A (Tc), 6.6A (Ta), 8.8A (Tc) | 15mOhm @ 10.2A, 10V, 23.3mOhm @ 8.8A, 10V | 2.7V @ 1mA | 19nC @ 10V, 32nC @ 10V | - | 1300pF @ 15V, 2300pF @ 15V | 1.4W (Ta), 2.5W (Tc) | PG-DSO-8-920 | -55°C ~ 150°C (TJ) | Surface Mount | - | - |
|
|
IPG20N04S409AATMA1MOSFET 2N-CH 40V 20A 8TDSON Infineon Technologies |
4,200 | - |
|
数据表 |
OptiMOS™ | 8-PowerVDFN | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | 40V | 20A (Tc) | 8.6mOhm @ 17A, 10V | 4V @ 22µA | 28nC @ 10V | - | 2250pF @ 25V | 54W (Tc) | PG-TDSON-8-4 | -55°C ~ 175°C (TJ) | Surface Mount | Automotive | AEC-Q101 |
|
IPG20N04S4L08AATMA1MOSFET 2N-CH 40V 20A 8TDSON Infineon Technologies |
3,985 | - |
|
数据表 |
OptiMOS™ | 8-PowerVDFN | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | 40V | 20A | 8.2mOhm @ 17A, 10V | 2.2V @ 22µA | 39nC @ 10V | Logic Level Gate | 3050pF @ 25V | 54W | PG-TDSON-8-10 | -55°C ~ 175°C (TJ) | Surface Mount, Wettable Flank | Automotive | AEC-Q101 |
|
|
IAUCN10S5L094DATMA1MOSFET 2N-CH 100V 66A 8TDSON Infineon Technologies |
4,734 | - |
|
数据表 |
OptiMOS™ 5 | 8-PowerTDFN | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 N-Channel | 100V | 66A (Tj) | 9.4mOhm @ 30A, 10V | 2.2V @ 35µA | 30nC @ 10V | - | 2180pF @ 50V | 96W (Tc) | PG-TDSON-8-60 | -55°C ~ 175°C (TJ) | Surface Mount | Automotive | AEC-Q101 |
|
IPG20N06S4L14ATMA2MOSFET 2N-CH 60V 20A 8TDSON Infineon Technologies |
8,950 | - |
|
数据表 |
OptiMOS™ | 8-PowerVDFN | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | 60V | 20A | 13.7mOhm @ 17A, 10V | 2.2V @ 20µA | 39nC @ 10V | Logic Level Gate | 2890pF @ 25V | 50W | PG-TDSON-8-4 | -55°C ~ 175°C (TJ) | Surface Mount | Automotive | AEC-Q101 |
|
|
IPG20N06S4L11AATMA1MOSFET 2N-CH 60V 20A 8TDSON Infineon Technologies |
1,590 | - |
|
数据表 |
OptiMOS™ | 8-PowerVDFN | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | 60V | 20A | 11.2mOhm @ 17A, 10V | 2.2V @ 28µA | 53nC @ 10V | Logic Level Gate | 4020pF @ 25V | 65W | PG-TDSON-8-10 | -55°C ~ 175°C (TJ) | Surface Mount, Wettable Flank | Automotive | AEC-Q101 |
|
|
IQE220N15NM5CGSCATMA1MOSFET 2N-CH 150V 9WHTFN Infineon Technologies |
6,000 | - |
|
数据表 |
OptiMOS™ | 9-PowerWDFN | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 N-Channel (Half Bridge) | 150V | - | - | - | - | - | - | - | PG-WHTFN-9 | - | Surface Mount | - | - |
|
|
IQE008N03LM5CGSCATMA1MOSFET 2N-CH 30V 9WHTFN Infineon Technologies |
6,000 | - |
|
数据表 |
OptiMOS™ | 9-PowerWDFN | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 N-Channel (Half Bridge) | 30V | - | - | - | - | - | - | - | PG-WHTFN-9 | - | Surface Mount | - | - |
|
|
IQE008N03LM5SCATMA1MOSFET 2N-CH 30V 8WHSON Infineon Technologies |
5,997 | - |
|
数据表 |
OptiMOS™ | 8-PowerWDFN | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 N-Channel (Half Bridge) | 30V | - | - | - | - | - | - | - | PG-WHSON-8 | - | Surface Mount | - | - |
|
BSG0813NDIATMA1MOSFET 2N-CH 25V 19A/33A TISON8 Infineon Technologies |
4,918 | - |
|
数据表 |
- | 8-PowerTDFN | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) Asymmetrical | 25V | 19A, 33A | 3mOhm @ 20A, 10V | 2V @ 250µA | 8.4nC @ 4.5V | Logic Level Gate, 4.5V Drive | 1100pF @ 12V | 2.5W | PG-TISON-8 | -55°C ~ 155°C (TJ) | Surface Mount | - | - |
