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场效应晶体管（FET）、MOSFET 阵列
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 配置 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | FET 特性 | 输入电容 (Ciss)（最大值）@ Vds | 功率 - 最大值 | 供应商设备封装 | 工作温度 | 安装类型 | 等级 | 认证 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IRF9362TRPBFMOSFET 2P-CH 30V 8A 8SO Infineon Technologies |
47,470 | - |
|
数据表 |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 P-Channel (Dual) | 30V | 8A | 21mOhm @ 8A, 10V | 2.4V @ 25µA | 39nC @ 10V | Logic Level Gate | 1300pF @ 25V | 2W | 8-SO | -55°C ~ 150°C (TJ) | Surface Mount | - | - |
|
BSC150N03LDGATMA1MOSFET 2N-CH 30V 8A 8TDSON Infineon Technologies |
46,097 | - |
|
数据表 |
OptiMOS™ | 8-PowerVDFN | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | 30V | 8A | 15mOhm @ 20A, 10V | 2.2V @ 250µA | 13.2nC @ 10V | Logic Level Gate | 1100pF @ 15V | 26W | PG-TDSON-8-4 | -55°C ~ 150°C (TJ) | Surface Mount | - | - |
|
|
IRF7303TRPBFMOSFET 2N-CH 30V 4.9A 8SO Infineon Technologies |
3,293 | - |
|
数据表 |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | 30V | 4.9A | 50mOhm @ 2.4A, 10V | 1V @ 250µA | 25nC @ 10V | - | 520pF @ 25V | 2W | 8-SO | -55°C ~ 150°C (TJ) | Surface Mount | - | - |
|
|
IRL6372TRPBFMOSFET 2N-CH 30V 8.1A 8SO Infineon Technologies |
12,134 | - |
|
数据表 |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | 30V | 8.1A | 17.9mOhm @ 8.1A, 4.5V | 1.1V @ 10µA | 11nC @ 4.5V | Logic Level Gate | 1020pF @ 25V | 2W | 8-SO | -55°C ~ 150°C (TJ) | Surface Mount | - | - |
|
|
IRF7380TRPBFMOSFET 2N-CH 80V 3.6A 8SO Infineon Technologies |
2,049 | - |
|
数据表 |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | 80V | 3.6A | 73mOhm @ 2.2A, 10V | 4V @ 250µA | 23nC @ 10V | Logic Level Gate | 660pF @ 25V | 2W | 8-SO | -55°C ~ 150°C (TJ) | Surface Mount | - | - |
|
|
IPG20N06S4L26ATMA1MOSFET 2N-CH 60V 20A 8TDSON Infineon Technologies |
16,128 | - |
|
数据表 |
OptiMOS™ | 8-PowerVDFN | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | 60V | 20A | 26mOhm @ 17A, 10V | 2.2V @ 10µA | 20nC @ 10V | Logic Level Gate | 1430pF @ 25V | 33W | PG-TDSON-8-4 | -55°C ~ 175°C (TJ) | Surface Mount | - | - |
|
|
BSO150N03MDGXUMA1MOSFET 2N-CH 30V 8A 8DSO Infineon Technologies |
24,711 | - |
|
数据表 |
OptiMOS™ | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | 30V | 8A | 15mOhm @ 9.3A, 10V | 2V @ 250µA | 17nC @ 10V | Logic Level Gate | 1300pF @ 15V | 1.4W | PG-DSO-8 | -55°C ~ 150°C (TJ) | Surface Mount | - | - |
|
|
IRF7319TRPBFMOSFET N/P-CH 30V 8SO Infineon Technologies |
17,830 | - |
|
数据表 |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | N and P-Channel | 30V | - | 29mOhm @ 5.8A, 10V | 1V @ 250µA | 33nC @ 10V | - | 650pF @ 25V | 2W | 8-SO | -55°C ~ 150°C (TJ) | Surface Mount | - | - |
|
BSZ15DC02KDHXTMA1MOSFET N/P-CH 20V 5.1A 8TSDSON Infineon Technologies |
15,560 | - |
|
数据表 |
HEXFET® | 8-PowerTDFN | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | N and P-Channel Complementary | 20V | 5.1A, 3.2A | 55mOhm @ 5.1A, 4.5V | 1.4V @ 110µA | 2.8nC @ 4.5V | Logic Level Gate, 2.5V Drive | 419pF @ 10V | 2.5W | PG-TSDSON-8-FL | -55°C ~ 175°C (TJ) | Surface Mount | Automotive | AEC-Q101 |
|
|
IRF7329TRPBFMOSFET 2P-CH 12V 9.2A 8SO Infineon Technologies |
18,592 | - |
|
数据表 |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 P-Channel (Dual) | 12V | 9.2A | 17mOhm @ 9.2A, 4.5V | 900mV @ 250µA | 57nC @ 4.5V | Logic Level Gate | 3450pF @ 10V | 2W | 8-SO | -55°C ~ 150°C (TJ) | Surface Mount | - | - |
