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场效应晶体管（FET）、MOSFET 阵列
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 配置 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | FET 特性 | 输入电容 (Ciss)（最大值）@ Vds | 功率 - 最大值 | 供应商设备封装 | 工作温度 | 安装类型 | 等级 | 认证 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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ISG0613N04NM6HATMA1MOSFET 2N-CH 40V 42A 10VITFN Infineon Technologies |
3,000 | - |
|
数据表 |
OptiMOS™ 6 | 10-PowerVDFN | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 N-Channel (Half Bridge) | 40V | 42A (Ta), 299A (Tc) | 0.88mOhm @ 50A, 10V | 2.8V @ 780µA | 104nC @ 10V | - | 6200pF @ 20V | 3W (Ta), 167W (Tc) | PG-VITFN-10-1 | -55°C ~ 175°C (TJ) | Surface Mount | - | - |
|
|
ISG0614N06NM5HATMA1MOSFET 2N-CH 60V 31A 10VITFN Infineon Technologies |
2,976 | - |
|
数据表 |
OptiMOS™ 5 | 10-PowerVDFN | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 N-Channel (Half Bridge) | 60V | 31A (Ta), 233A (Tc) | 1.6mOhm @ 50A, 10V | 3.3V @ 86µA | 102nC @ 10V | - | 6400pF @ 30V | 3W (Ta), 167W (Tc) | PG-VITFN-10-1 | -55°C ~ 175°C (TJ) | Surface Mount | - | - |
|
|
ISG0613N04NM6HSCATMA1MOSFET 2N-CH 40V 42A 10WHITFN Infineon Technologies |
2,990 | - |
|
数据表 |
OptiMOS™ 6 | 10-PowerWDFN | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 N-Channel (Half Bridge) | 40V | 42A (Ta), 299A (Tc) | 0.88mOhm @ 50A, 10V | 2.8V @ 780µA | 104nC @ 10V | - | 6200pF @ 20V | 3W (Ta), 167W (Tc) | PG-WHITFN-10-1 | -55°C ~ 175°C (TJ) | Surface Mount | - | - |
|
|
ISG0614N06NM5HSCATMA1MOSFET 2N-CH 60V 31A 10WHITFN Infineon Technologies |
2,990 | - |
|
数据表 |
OptiMOS™ 5 | 10-PowerWDFN | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 N-Channel (Half Bridge) | 60V | 31A (Ta), 233A (Tc) | 1.6mOhm @ 50A, 10V | 3.3V @ 86µA | 102nC @ 10V | - | 6400pF @ 30V | 3W (Ta), 167W (Tc) | PG-WHITFN-10-1 | -55°C ~ 175°C (TJ) | Surface Mount | - | - |
|
|
IAUTN08S5N012LATMA1MOSFET 2N-CH 80V 300A PG-HSOF Infineon Technologies |
1,956 | - |
|
数据表 |
OptiMOS™ 5 | 8-PowerSFN | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 N-Channel, Common Drain, Common Source | 80V | 300A (Tj) | 1.15mOhm @ 100A, 10V | 3.3V @ 275µA | 24nC @ 10V | - | 15340pF @ 40V | 375W (Tc) | PG-HSOF-8-2 | -55°C ~ 175°C (TJ) | Surface Mount | Automotive | AEC-Q101 |
|
|
F435MR07W1D7S8B11ABPSA1MOSFET 4N-CH 650V 35A MODULE Infineon Technologies |
42 | - |
|
数据表 |
EasyPACK™ 1B | Module | Tray | Active | MOSFET (Metal Oxide) | 4 N-Channel (Full Bridge) | 650V | 35A | 39.4mOhm @ 35A, 10V | 4.45V @ 1.74mA | 141nC @ 10V | - | 6950pF @ 400V | - | Module | -40°C ~ 150°C (TJ) | Chassis Mount | - | - |
|
|
FF33MR12W1M1HPB11BPSA1MOSFET Infineon Technologies |
30 | - |
|
数据表 |
- | - | Tray | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
DF11MR12W1M1HFB67BPSA1MOSFET 1200V AG-EASY1B Infineon Technologies |
38 | - |
|
数据表 |
CoolSiC™ | Module | Tray | Active | Silicon Carbide (SiC) | - | 1200V (1.2kV) | - | - | - | - | - | - | - | AG-EASY1B | - | Chassis Mount | - | - |
|
BSO211PHXUMA1MOSFET 2P-CH 20V 4A 8DSO Infineon Technologies |
2,949 | - |
|
数据表 |
OptiMOS™ | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | MOSFET (Metal Oxide) | 2 P-Channel (Dual) | 20V | 4A | 67mOhm @ 4.6A, 4.5V | 1.2V @ 25µA | 10nC @ 4.5V | Logic Level Gate | 1095pF @ 15V | 1.6W | PG-DSO-8 | -55°C ~ 150°C (TJ) | Surface Mount | - | - |
|
|
IRF7316GTRPBFMOSFET 2P-CH 30V 4.9A 8SO Infineon Technologies |
2,290 | - |
|
数据表 |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | MOSFET (Metal Oxide) | 2 P-Channel (Dual) | 30V | 4.9A | 58mOhm @ 4.9A, 10V | 1V @ 250µA | 34nC @ 10V | Logic Level Gate | 710pF @ 25V | 2W | 8-SO | -55°C ~ 150°C (TJ) | Surface Mount | - | - |
