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场效应晶体管（FET）、MOSFET 阵列
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 配置 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | FET 特性 | 输入电容 (Ciss)（最大值）@ Vds | 功率 - 最大值 | 供应商设备封装 | 工作温度 | 安装类型 | 等级 | 认证 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IRFH4251DTRPBFMOSFET 2N-CH 25V 64A/188A TISON8 Infineon Technologies |
8,027 | - |
|
数据表 |
FASTIRFET™ | 8-PowerVDFN | Tape & Reel (TR) | Obsolete | MOSFET (Metal Oxide) | 2 N-Channel (Dual), Schottky | 25V | 64A, 188A | 3.2mOhm @ 30A, 10V | 2.1V @ 35µA | 15nC @ 4.5V | Logic Level Gate | 1314pF @ 13V | 31W, 63W | PG-TISON-8 | -55°C ~ 150°C (TJ) | Surface Mount | - | - |
|
IRF3575DTRPBFMOSFET 2N-CH 25V 303A 32QFN Infineon Technologies |
3,680 | - |
|
数据表 |
- | 32-PowerWFQFN | Tape & Reel (TR) | Obsolete | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | 25V | 303A (Tc) | - | - | - | - | - | - | 32-PQFN (6x6) | - | Surface Mount | - | - |
|
IRFH4255DTRPBFMOSFET 2N-CH 25V 64A/105A PQFN Infineon Technologies |
5,927 | - |
|
数据表 |
HEXFET® | 8-PowerVDFN | Tape & Reel (TR) | Obsolete | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | 25V | 64A, 105A | 3.2mOhm @ 30A, 10V | 2.1V @ 35µA | 15nC @ 4.5V | Logic Level Gate | 1314pF @ 13V | 31W, 38W | PQFN (5x6) | -55°C ~ 150°C (TJ) | Surface Mount | - | - |
|
IRFHE4250DTRPBFMOSFET 2N-CH 25V 86A/303A 32QFN Infineon Technologies |
8,220 | - |
|
数据表 |
FASTIRFET™ | 32-PowerWFQFN | Tape & Reel (TR) | Obsolete | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | 25V | 86A, 303A | 2.75mOhm @ 27A, 10V, 0.9mOhm @ 27A, 10V | 2.1V @ 35µA | 20nC @ 4.5V | Logic Level Gate | 1735pF @ 13V | 156W | 32-PQFN (6x6) | -55°C ~ 150°C (TJ) | Surface Mount | - | - |
|
IRL6297SDTRPBFMOSFET 2N-CH 20V 15A DIRECTFETSA Infineon Technologies |
9,495 | - |
|
数据表 |
HEXFET® | DirectFET™ Isometric SA | Tape & Reel (TR) | Obsolete | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | 20V | 15A | 4.9mOhm @ 15A, 4.5V | 1.1V @ 35µA | 54nC @ 10V | Logic Level Gate | 2245pF @ 10V | 1.7W | DIRECTFET™ SA | -40°C ~ 150°C (TJ) | Surface Mount | - | - |
|
IRF9389PBFMOSFET N/P-CH 30V 6.8A/4.6A 8SO Infineon Technologies |
5,181 | - |
|
数据表 |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tube | Discontinued at Digi-Key | MOSFET (Metal Oxide) | N and P-Channel | 30V | 6.8A, 4.6A | 27mOhm @ 6.8A, 10V | 2.3V @ 10µA | 14nC @ 10V | Logic Level Gate | 398pF @ 15V | 2W | 8-SO | -55°C ~ 150°C (TJ) | Surface Mount | - | - |
|
BSL205NH6327XTSA1MOSFET 2N-CH 20V 2.5A TSOP6-6 Infineon Technologies |
2,644 | - |
|
数据表 |
OptiMOS™ | SOT-23-6 Thin, TSOT-23-6 | Tape & Reel (TR) | Obsolete | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | 20V | 2.5A | 50mOhm @ 2.5A, 4.5V | 1.2V @ 11µA | 3.2nC @ 4.5V | Logic Level Gate, 4.5V Drive | 419pF @ 10V | 500mW | PG-TSOP6-6 | -55°C ~ 150°C (TJ) | Surface Mount | Automotive | AEC-Q101 |
|
|
BSL207NH6327XTSA1MOSFET 2N-CH 20V 2.1A 6TSOP Infineon Technologies |
9,454 | - |
|
数据表 |
OptiMOS™ | SC-74, SOT-457 | Tape & Reel (TR) | Obsolete | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | 20V | 2.1A | 70mOhm @ 2.1A, 4.5V | 1.2V @ 11µA | 2.1nC @ 4.5V | Logic Level Gate, 2.5V Drive | 419pF @ 10V | 500mW | PG-TSOP-6-1 | -55°C ~ 150°C (TJ) | Surface Mount | Automotive | AEC-Q101 |
|
|
BSL214NH6327XTSA1MOSFET 2N-CH 20V 1.5A TSOP6-6 Infineon Technologies |
5,338 | - |
|
数据表 |
OptiMOS™ | SOT-23-6 Thin, TSOT-23-6 | Tape & Reel (TR) | Obsolete | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | 20V | 1.5A | 140mOhm @ 1.5A, 4.5V | 1.2V @ 3.7µA | 0.8nC @ 5V | Logic Level Gate, 2.5V Drive | 143pF @ 10V | 500mW | PG-TSOP6-6 | -55°C ~ 150°C (TJ) | Surface Mount | Automotive | AEC-Q101 |
|
|
BSL314PEH6327XTSA1MOSFET 2P-CH 30V 1.5A TSOP6-6 Infineon Technologies |
4,329 | - |
|
数据表 |
OptiMOS™ | SOT-23-6 Thin, TSOT-23-6 | Tape & Reel (TR) | Obsolete | MOSFET (Metal Oxide) | 2 P-Channel (Dual) | 30V | 1.5A | 140mOhm @ 1.5A, 10V | 2V @ 6.3µA | 2.9nC @ 10V | Logic Level Gate, 4.5V Drive | 294pF @ 15V | 500mW | PG-TSOP6-6 | -55°C ~ 150°C (TJ) | Surface Mount | Automotive | AEC-Q101 |
