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场效应晶体管（FET）、MOSFET 阵列
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 配置 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | FET 特性 | 输入电容 (Ciss)（最大值）@ Vds | 功率 - 最大值 | 供应商设备封装 | 工作温度 | 安装类型 | 等级 | 认证 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IRF7351PBFMOSFET 2N-CH 60V 8A 8SO Infineon Technologies |
7,528 | - |
|
数据表 |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tube | Discontinued at Digi-Key | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | 60V | 8A | 17.8mOhm @ 8A, 10V | 4V @ 50µA | 36nC @ 10V | Logic Level Gate | 1330pF @ 30V | 2W | 8-SO | -55°C ~ 150°C (TJ) | Surface Mount | - | - |
|
BSD840N L6327MOSFET 2N-CH 20V 0.88A SOT363 Infineon Technologies |
7,400 | - |
|
数据表 |
OptiMOS™ | 6-VSSOP, SC-88, SOT-363 | Tape & Reel (TR) | Obsolete | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | 20V | 880mA | 400mOhm @ 880mA, 2.5V | 750mV @ 1.6µA | 0.26nC @ 2.5V | Logic Level Gate | 78pF @ 10V | 500mW | PG-SOT363-PO | -55°C ~ 150°C (TJ) | Surface Mount | - | - |
|
BSL308PEL6327HTSA1MOSFET 2P-CH 30V 2A TSOP6-6 Infineon Technologies |
8,388 | - |
|
数据表 |
OptiMOS™ | SOT-23-6 Thin, TSOT-23-6 | Tape & Reel (TR) | Obsolete | MOSFET (Metal Oxide) | 2 P-Channel (Dual) | 30V | 2A | 80mOhm @ 2A, 10V | 1V @ 11µA | 5nC @ 10V | Logic Level Gate | 500pF @ 15V | 500mW | PG-TSOP6-6 | -55°C ~ 150°C (TJ) | Surface Mount | - | - |
|
|
BSL314PEL6327HTSA1MOSFET 2P-CH 30V 1.5A TSOP6-6 Infineon Technologies |
9,740 | - |
|
数据表 |
OptiMOS™ | SOT-23-6 Thin, TSOT-23-6 | Tape & Reel (TR) | Obsolete | MOSFET (Metal Oxide) | 2 P-Channel (Dual) | 30V | 1.5A | 140mOhm @ 1.5A, 10V | 2V @ 6.3µA | 2.9nC @ 10V | Logic Level Gate | 294pF @ 15V | 500mW | PG-TSOP6-6 | -55°C ~ 150°C (TJ) | Surface Mount | - | - |
|
|
BSL806NL6327HTSA1MOSFET 2N-CH 20V 2.3A TSOP6-6 Infineon Technologies |
5,538 | - |
|
数据表 |
OptiMOS™ | SOT-23-6 Thin, TSOT-23-6 | Tape & Reel (TR) | Obsolete | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | 20V | 2.3A | 57mOhm @ 2.3A, 2.5V | 750mV @ 11µA | 1.7nC @ 2.5V | Logic Level Gate | 259pF @ 10V | 500mW | PG-TSOP6-6 | -55°C ~ 150°C (TJ) | Surface Mount | - | - |
|
IPG15N06S3L-45MOSFET 2N-CH 55V 15A 8TDSON Infineon Technologies |
4,470 | - |
|
数据表 |
OptiMOS™ | 8-PowerVDFN | Tape & Reel (TR) | Obsolete | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | 55V | 15A | 45mOhm @ 10A, 10V | 2.2V @ 10µA | 20nC @ 10V | Logic Level Gate | 1420pF @ 25V | 21W | PG-TDSON-8-4 | -55°C ~ 175°C (TJ) | Surface Mount | - | - |
|
|
IPG20N06S3L-23MOSFET 2N-CH 55V 20A 8TDSON Infineon Technologies |
3,738 | - |
|
数据表 |
OptiMOS™ | 8-PowerVDFN | Tape & Reel (TR) | Obsolete | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | 55V | 20A | 23mOhm @ 16A, 10V | 2.2V @ 20µA | 42nC @ 10V | Logic Level Gate | 2950pF @ 25V | 45W | PG-TDSON-8-4 | -55°C ~ 175°C (TJ) | Surface Mount | - | - |
|
|
IPG20N06S3L-35MOSFET 2N-CH 55V 20A 8TDSON Infineon Technologies |
3,278 | - |
|
数据表 |
OptiMOS™ | 8-PowerVDFN | Tape & Reel (TR) | Obsolete | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | 55V | 20A | 35mOhm @ 11A, 10V | 2.2V @ 15µA | 23nC @ 10V | Logic Level Gate | 1730pF @ 25V | 30W | PG-TDSON-8-4 | -55°C ~ 175°C (TJ) | Surface Mount | - | - |
|
IRF6723M2DTR1PMOSFET 2N-CH 30V 15A DIRECTFETMA Infineon Technologies |
8,767 | - |
|
数据表 |
HEXFET® | DirectFET™ Isometric MA | Tape & Reel (TR) | Obsolete | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | 30V | 15A | 6.6mOhm @ 15A, 10V | 2.35V @ 25µA | 14nC @ 4.5V | Logic Level Gate | 1380pF @ 15V | 2.7W | DIRECTFET™ MA | -55°C ~ 175°C (TJ) | Surface Mount | - | - |
|
IRFI4019HG-117PMOSFET 2N-CH 150V 8.7A TO220-5 Infineon Technologies |
5,655 | - |
|
数据表 |
- | TO-220-5 Full Pack, Formed Leads | Tube | Obsolete | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | 150V | 8.7A | 95mOhm @ 5.2A, 10V | 4.9V @ 50µA | 20nC @ 10V | - | 810pF @ 25V | 18W | TO-220-5 Full-Pak | -55°C ~ 150°C (TJ) | Through Hole | - | - |
