订单满￥1000免运费
24小时咨询热线
0755 83957878
场效应晶体管（FET）、MOSFET 阵列
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 配置 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | FET 特性 | 输入电容 (Ciss)（最大值）@ Vds | 功率 - 最大值 | 供应商设备封装 | 工作温度 | 安装类型 | 等级 | 认证 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IPG20N06S415ATMA1MOSFET 2N-CH 60V 20A 8TDSON Infineon Technologies |
3,631 | - |
|
数据表 |
OptiMOS™ | 8-PowerVDFN | Tape & Reel (TR) | Discontinued at Digi-Key | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | 60V | 20A | 15.5mOhm @ 17A, 10V | 4V @ 20µA | 29nC @ 10V | - | 2260pF @ 25V | 50W | PG-TDSON-8-4 | -55°C ~ 175°C (TJ) | Surface Mount | Automotive | AEC-Q101 |
|
|
IPG20N06S4L14ATMA1MOSFET 2N-CH 60V 20A 8TDSON Infineon Technologies |
3,168 | - |
|
数据表 |
OptiMOS™ | 8-PowerVDFN | Tape & Reel (TR) | Discontinued at Digi-Key | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | 60V | 20A | 13.7mOhm @ 17A, 10V | 2.2V @ 20µA | 39nC @ 10V | Logic Level Gate | 2890pF @ 25V | 50W | PG-TDSON-8-4 | -55°C ~ 175°C (TJ) | Surface Mount | Automotive | AEC-Q101 |
|
BSD340NH6327XTSA1MOSFET P-CH SOT363-6 Infineon Technologies |
7,545 | - |
|
数据表 |
OptiMOS™ | 6-VSSOP, SC-88, SOT-363 | Tape & Reel (TR) | Obsolete | - | - | - | - | - | - | - | - | - | - | PG-SOT363-6 | - | Surface Mount | Automotive | AEC-Q101 |
|
BSZ0909NDXTMA1MOSFET 2N-CH 30V 20A WISON-8 Infineon Technologies |
3,788 | - |
|
数据表 |
OptiMOS™ | 8-PowerVDFN | Tape & Reel (TR) | Obsolete | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | 30V | 20A (Tc) | 18mOhm @ 9A, 10V | 2V @ 250µA | 2.6nC @ 4.5V | Logic Level Gate, 4.5V Drive | 360pF @ 15V | 17W | PG-WISON-8 | -55°C ~ 150°C (TJ) | Surface Mount | - | - |
|
BSL806NH6327XTSA1MOSFET 2N-CH 20V 2.3A TSOP6-6 Infineon Technologies |
3,195 | - |
|
数据表 |
OptiMOS™ | SOT-23-6 Thin, TSOT-23-6 | Tape & Reel (TR) | Obsolete | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | 20V | 2.3A (Ta) | 57mOhm @ 2.3A, 2.5V | 750mV @ 11µA | 1.7nC @ 2.5V | Logic Level Gate, 1.8V Drive | 259pF @ 10V | 500mW | PG-TSOP6-6 | -55°C ~ 150°C (TJ) | Surface Mount | - | - |
|
FF11MR12W1M1B11BOMA1MOSFET 2N-CH 1200V 100A MODULE Infineon Technologies |
9,635 | - |
|
数据表 |
CoolSiC™+ | Module | Tray | Obsolete | Silicon Carbide (SiC) | 2 N-Channel (Dual) | 1200V (1.2kV) | 100A | 11mOhm @ 100A, 15V | 5.55V @ 40mA | 250nC @ 15V | - | 7950pF @ 800V | - | Module | -40°C ~ 150°C (TJ) | Chassis Mount | - | - |
|
|
BSZ0910NDXTMA1MOSFET 2N-CH 30V 9.5A WISON-8 Infineon Technologies |
2,767 | - |
|
数据表 |
OptiMOS™ | 8-PowerVDFN | Tape & Reel (TR) | Obsolete | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | 30V | 9.5A (Ta), 25A (Tc) | 9.5mOhm @ 9A, 10V | 2V @ 250µA | 5.6nC @ 4.5V | Logic Level Gate, 4.5V Drive | 800pF @ 15V | 1.9W (Ta), 31W (Tc) | PG-WISON-8 | -55°C ~ 150°C (TJ) | Surface Mount | - | - |
|
FF8MR12W2M1B11BOMA1MOSFET 2N-CH 1200V AG-EASY2BM-2 Infineon Technologies |
6,562 | - |
|
数据表 |
CoolSiC™+ | Module | Tray | Obsolete | Silicon Carbide (SiC) | 2 N-Channel (Dual) | 1200V (1.2kV) | 150A (Tj) | 7.5mOhm @ 150A, 15V (Typ) | 5.55V @ 60mA | 372nC @ 15V | - | 11000pF @ 800V | - | AG-EASY2BM-2 | -40°C ~ 150°C (TJ) | Chassis Mount | - | - |
|
|
FF6MR12W2M1B11BOMA1MOSFET 2N-CH 1200V AG-EASY2BM-2 Infineon Technologies |
3,316 | - |
|
数据表 |
CoolSiC™+ | Module | Tray | Obsolete | Silicon Carbide (SiC) | 2 N-Channel (Dual) | 1200V (1.2kV) | 200A (Tj) | 5.63mOhm @ 200A, 15V | 5.55V @ 80mA | 496nC @ 15V | - | 14700pF @ 800V | - | AG-EASY2BM-2 | -40°C ~ 150°C (TJ) | Chassis Mount | - | - |
|
DF11MR12W1M1B11BPSA1MOSFET 2N-CH 1200V AG-EASY1BM-2 Infineon Technologies |
7,868 | - |
|
数据表 |
CoolSiC™+ | Module | Tray | Obsolete | Silicon Carbide (SiC) | 2 N-Channel (Dual) | 1200V (1.2kV) | 50A (Tj) | 22.5mOhm @ 50A, 15V | 5.55V @ 20mA | 124nC @ 15V | - | 3680pF @ 800V | - | AG-EASY1BM-2 | -40°C ~ 150°C (TJ) | Chassis Mount | - | - |
