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场效应晶体管（FET）、MOSFET 阵列
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 配置 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | FET 特性 | 输入电容 (Ciss)（最大值）@ Vds | 功率 - 最大值 | 供应商设备封装 | 工作温度 | 安装类型 | 等级 | 认证 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IRF7331TRPBF-1MOSFET 2N-CH 20V 7A 8SOIC Infineon Technologies |
5,684 | - |
|
数据表 |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | 20V | 7A (Ta) | 30mOhm @ 7A, 4.5V | 1.2V @ 250µA | 20nC @ 4.5V | - | 1340pF @ 16V | 2W (Ta) | 8-SOIC | -55°C ~ 150°C (TJ) | Surface Mount | - | - |
|
|
IRF7904TRPBF-1MOSFET 2N-CH 30V 7.6A/11A 8SO Infineon Technologies |
8,358 | - |
|
数据表 |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | MOSFET (Metal Oxide) | 2 N-Channel (Half Bridge) | 30V | 7.6A, 11A | 16.2mOhm @ 7.6A, 10V | 2.25V @ 25µA | 11nC @ 4.5V | Logic Level Gate | 910pF @ 15V | 1.4W, 2W | 8-SO | -55°C ~ 150°C (TJ) | Surface Mount | - | - |
|
94-2518PBFMOSFET Infineon Technologies |
2,844 | - |
|
数据表 |
- | - | Tube | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
64-2013PBFMOSFET Infineon Technologies |
8,391 | - |
|
数据表 |
- | - | Tube | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
FF6MR12W2M1PB11BPSA1MOSFET 2N-CH 1200V 200A Infineon Technologies |
5,752 | - |
|
数据表 |
CoolSiC™+ | Module | Tray | Obsolete | Silicon Carbide (SiC) | 2 N-Channel (Dual) | 1200V (1.2kV) | 200A (Tj) | 5.63mOhm @ 200A, 15V | 5.55V @ 80mA | 496nC @ 15V | - | 14700pF @ 800V | - | - | -40°C ~ 150°C (TJ) | Chassis Mount | - | - |
|
FF23MR12W1M1PB11BPSA1MOSFET 2 IND 1200V AG-EASY1BM-2 Infineon Technologies |
3,335 | - |
|
数据表 |
CoolSiC™+ | Module | Tray | Obsolete | MOSFET (Metal Oxide) | 2 Independent | 1200V (1.2kV) | 50A | 22.5mOhm @ 50A, 15V | 5.5V @ 20mA | 124nC @ 15V | - | 3680pF @ 800V | - | AG-EASY1BM-2 | -40°C ~ 150°C (TJ) | Chassis Mount | - | - |
|
BSC150N03LDMOSFET 2N-CH 30V 8A 8TDSON Infineon Technologies |
9,890 | - |
|
数据表 |
OptiMOS™ 3 | 8-PowerVDFN | Bulk | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | 30V | 8A | 15mOhm @ 20A, 10V | 2.2V @ 250µA | 6.4nC @ 10V | Logic Level Gate | 1100pF @ 15V | 26W | PG-TDSON-8-4 | -55°C ~ 150°C (TJ) | Surface Mount | - | - |
|
DF11MR12W1M1PB11BPSA1MOSFET 2N-CH 1200V 50A AG-EASY1B Infineon Technologies |
4,323 | - |
|
数据表 |
EasyPACK™ | Module | Tray | Obsolete | Silicon Carbide (SiC) | 2 N-Channel (Dual) | 1200V (1.2kV) | 50A (Tj) | 22.5mOhm @ 50A, 15V | 5.55V @ 20mA | 124nC @ 15V | - | 3680pF @ 800V | - | AG-EASY1B-2 | -40°C ~ 150°C (TJ) | Chassis Mount | - | - |
|
IRF7313TRPBF-1MOSFET 2N-CH 30V 6.5A 8SOIC Infineon Technologies |
5,947 | - |
|
数据表 |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | 30V | 6.5A (Ta) | 29mOhm @ 5.8A, 10V | 1V @ 250µA | 33nC @ 10V | - | 650pF @ 25V | 2W (Ta) | 8-SOIC | -55°C ~ 150°C (TJ) | Surface Mount | - | - |
|
|
IRF9910TRPBF-1MOSFET 2N-CH 20V 10A 8SOIC Infineon Technologies |
2,349 | - |
|
数据表 |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | 20V | 10A (Ta), 12A (Ta) | 13.4mOhm @ 10A, 10V, 9.3mOhm @ 12A, 10V | 2.55V @ 250µA | 11nC @ 4.5V, 23nC @ 4.5V | - | 900pF @ 10V, 1860pF @ 10V | 2W (Ta) | 8-SOIC | -55°C ~ 150°C (TJ) | Surface Mount | - | - |
