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场效应晶体管(FET)、MOSFET 阵列

制造商 系列 封装/外壳 包装 产品状态 技术 配置 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs FET 特性 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 供应商设备封装 工作温度 安装类型 等级 认证

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 配置 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs FET 特性 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 供应商设备封装 工作温度 安装类型 等级 认证
AUIRF7303Q

AUIRF7303Q

MOSFET 2N-CH 30V 5.3A 8SOIC

Infineon Technologies

2,397 -
AUIRF7303Q

数据表

HEXFET® 8-SOIC (0.154", 3.90mm Width) Tube Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) 30V 5.3A 50mOhm @ 2.7A, 10V 3V @ 100µA 21nC @ 10V Logic Level Gate 515pF @ 25V 2.4W 8-SOIC -55°C ~ 175°C (TJ) Surface Mount - -
AUIRF7304Q

AUIRF7304Q

MOSFET 2P-CH 20V 4.3A 8SOIC

Infineon Technologies

5,983 -
AUIRF7304Q

数据表

HEXFET® 8-SOIC (0.154", 3.90mm Width) Tube Obsolete MOSFET (Metal Oxide) 2 P-Channel (Dual) 20V 4.3A 90mOhm @ 2.2A, 4.5V 1.5V @ 250µA 22nC @ 4.5V Logic Level Gate 610pF @ 15V 2W 8-SOIC -55°C ~ 150°C (TJ) Surface Mount - -
AUIRF7309Q

AUIRF7309Q

MOSFET N/P-CH 30V 4A/3A 8SOIC

Infineon Technologies

4,724 -
AUIRF7309Q

数据表

HEXFET® 8-SOIC (0.154", 3.90mm Width) Tube Obsolete MOSFET (Metal Oxide) N and P-Channel 30V 4A, 3A 50mOhm @ 2.4A, 10V 3V @ 250µA 25nC @ 4.5V Logic Level Gate 520pF @ 15V 1.4W 8-SOIC -55°C ~ 150°C (TJ) Surface Mount - -
AUIRF7313Q

AUIRF7313Q

MOSFET 2N-CH 30V 6.9A 8SOIC

Infineon Technologies

3,672 -
AUIRF7313Q

数据表

HEXFET® 8-SOIC (0.154", 3.90mm Width) Tube Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) 30V 6.9A 29mOhm @ 6.9A, 10V 3V @ 250µA 33nC @ 10V Logic Level Gate 755pF @ 25V 2.4W 8-SOIC -55°C ~ 175°C (TJ) Surface Mount - -
AUIRF7316Q

AUIRF7316Q

MOSFET 2P-CH 30V 8SOIC

Infineon Technologies

2,188 -
AUIRF7316Q

数据表

HEXFET® 8-SOIC (0.154", 3.90mm Width) Tube Obsolete MOSFET (Metal Oxide) 2 P-Channel (Dual) 30V - 58mOhm @ 4.9A, 10V 3V @ 250µA 34nC @ 10V Logic Level Gate 710pF @ 25V 2W 8-SOIC -55°C ~ 150°C (TJ) Surface Mount - -
AUIRF7319Q

AUIRF7319Q

MOSFET N/P-CH 30V 6.5A 8SOIC

Infineon Technologies

5,925 -
AUIRF7319Q

数据表

HEXFET® 8-SOIC (0.154", 3.90mm Width) Tube Obsolete MOSFET (Metal Oxide) N and P-Channel 30V 6.5A, 4.9A 29mOhm @ 5.8A, 10V 3V @ 250µA 33nC @ 10V Logic Level Gate 650pF @ 25V 2W 8-SOIC -55°C ~ 150°C (TJ) Surface Mount - -
AUIRF7341Q

AUIRF7341Q

MOSFET 2N-CH 55V 5.1A 8SOIC

Infineon Technologies

5,060 -
AUIRF7341Q

数据表

HEXFET® 8-SOIC (0.154", 3.90mm Width) Tube Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) 55V 5.1A 50mOhm @ 5.1A, 10V 3V @ 250µA 44nC @ 10V Logic Level Gate 780pF @ 25V 2.4W 8-SOIC -55°C ~ 175°C (TJ) Surface Mount - -
AUIRF7342Q

AUIRF7342Q

MOSFET 2P-CH 55V 3.4A 8SOIC

Infineon Technologies

5,527 -
AUIRF7342Q

数据表

HEXFET® 8-SOIC (0.154", 3.90mm Width) Tube Obsolete MOSFET (Metal Oxide) 2 P-Channel (Dual) 55V 3.4A 105mOhm @ 3.4A, 10V 3V @ 250µA 38nC @ 10V Logic Level Gate 690pF @ 25V 2W 8-SOIC -55°C ~ 150°C (TJ) Surface Mount - -
AUIRF7379Q

AUIRF7379Q

MOSFET N/P-CH 30V 5.8A 8SOIC

Infineon Technologies

2,453 -
AUIRF7379Q

数据表

HEXFET® 8-SOIC (0.154", 3.90mm Width) Tube Obsolete MOSFET (Metal Oxide) N and P-Channel 30V 5.8A, 4.3A 45mOhm @ 5.8A, 10V 3V @ 250µA 25nC @ 10V Logic Level Gate 520pF @ 25V 2.5W 8-SOIC -55°C ~ 150°C (TJ) Surface Mount - -
AUIRF9952Q

AUIRF9952Q

MOSFET N/P-CH 30V 3.5A/2.3A 8SO

Infineon Technologies

9,687 -
AUIRF9952Q

数据表

HEXFET® 8-SOIC (0.154", 3.90mm Width) Tube Obsolete MOSFET (Metal Oxide) N and P-Channel 30V 3.5A, 2.3A 100mOhm @ 2.2A, 10V 3V @ 250µA 14nC @ 10V Logic Level Gate 190pF @ 15V 2W 8-SO -55°C ~ 150°C (TJ) Surface Mount - -
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