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场效应晶体管（FET）、MOSFET 阵列
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 配置 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | FET 特性 | 输入电容 (Ciss)（最大值）@ Vds | 功率 - 最大值 | 供应商设备封装 | 工作温度 | 安装类型 | 等级 | 认证 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IRF9362PBFMOSFET 2P-CH 30V 8A 8SO Infineon Technologies |
6,553 | - |
|
数据表 |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tube | Discontinued at Digi-Key | MOSFET (Metal Oxide) | 2 P-Channel (Dual) | 30V | 8A | 21mOhm @ 8A, 10V | 2.4V @ 25µA | 39nC @ 10V | Logic Level Gate | 1300pF @ 25V | 2W | 8-SO | -55°C ~ 150°C (TJ) | Surface Mount | - | - |
|
|
IRF8910GPBFMOSFET 2N-CH 20V 10A 8SO Infineon Technologies |
8,087 | - |
|
数据表 |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tube | Obsolete | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | 20V | 10A | 13.4mOhm @ 10A, 10V | 2.55V @ 250µA | 11nC @ 4.5V | Logic Level Gate | 960pF @ 10V | 2W | 8-SO | -55°C ~ 150°C (TJ) | Surface Mount | - | - |
|
IRFH7911TRPBFMOSFET 2N-CH 30V 13A/28A PQFN Infineon Technologies |
2,774 | - |
|
数据表 |
HEXFET® | 18-PowerVQFN | Tape & Reel (TR) | Obsolete | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | 30V | 13A, 28A | 8.6mOhm @ 12A, 10V | 2.35V @ 25µA | 12nC @ 4.5V | Logic Level Gate | 1060pF @ 15V | 2.4W, 3.4W | PQFN (5x6) | -55°C ~ 150°C (TJ) | Surface Mount | - | - |
|
|
AUIRF7343QMOSFET N/P-CH 55V 4.7A 8SOIC Infineon Technologies |
4,486 | - |
|
数据表 |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tube | Obsolete | MOSFET (Metal Oxide) | N and P-Channel | 55V | 4.7A, 3.4A | 50mOhm @ 4.7A, 10V | 1V @ 250µA | 36nC @ 10V | Logic Level Gate | 740pF @ 25V | 2W | 8-SOIC | -55°C ~ 150°C (TJ) | Surface Mount | - | - |
|
|
IRF9358PBFMOSFET 2P-CH 30V 9.2A 8SO Infineon Technologies |
8,274 | - |
|
数据表 |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tube | Discontinued at Digi-Key | MOSFET (Metal Oxide) | 2 P-Channel (Dual) | 30V | 9.2A | 16.3mOhm @ 9.2A, 10V | 2.4V @ 25µA | 38nC @ 10V | Logic Level Gate | 1740pF @ 25V | 2W | 8-SO | -55°C ~ 150°C (TJ) | Surface Mount | - | - |
|
IRF9395MTR1PBFMOSFET 2P-CH 30V 14A DIRECTFETMC Infineon Technologies |
9,910 | - |
|
数据表 |
HEXFET® | DirectFET™ Isometric MC | Tape & Reel (TR) | Obsolete | MOSFET (Metal Oxide) | 2 P-Channel (Dual) | 30V | 14A | 7mOhm @ 14A, 10V | 2.4V @ 50µA | 64nC @ 10V | Logic Level Gate | 3241pF @ 15V | 2.1W | DIRECTFET™ MC | -40°C ~ 150°C (TJ) | Surface Mount | - | - |
|
IRF9395MTRPBFMOSFET 2P-CH 30V 14A DIRECTFETMC Infineon Technologies |
6,728 | - |
|
数据表 |
HEXFET® | DirectFET™ Isometric MC | Tape & Reel (TR) | Obsolete | MOSFET (Metal Oxide) | 2 P-Channel (Dual) | 30V | 14A | 7mOhm @ 14A, 10V | 2.4V @ 50µA | 64nC @ 10V | Logic Level Gate | 3241pF @ 15V | 2.1W | DIRECTFET™ MC | -40°C ~ 150°C (TJ) | Surface Mount | - | - |
|
|
IRL6372PBFMOSFET 2N-CH 30V 8.1A 8SO Infineon Technologies |
5,087 | - |
|
数据表 |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tube | Discontinued at Digi-Key | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | 30V | 8.1A | 17.9mOhm @ 8.1A, 4.5V | 1.1V @ 10µA | 11nC @ 4.5V | Logic Level Gate | 1020pF @ 25V | 2W | 8-SO | -55°C ~ 150°C (TJ) | Surface Mount | - | - |
|
BSL308CL6327HTSA1MOSFET N/P-CH 30V 2.3A TSOP6-6 Infineon Technologies |
4,687 | - |
|
数据表 |
OptiMOS™ | SOT-23-6 Thin, TSOT-23-6 | Tape & Reel (TR) | Obsolete | MOSFET (Metal Oxide) | N and P-Channel | 30V | 2.3A, 2A | 80mOhm @ 2A, 10V | 2V @ 11µA | 500nC @ 10V | Logic Level Gate | 275pF @ 15V | 500mW | PG-TSOP6-6 | -55°C ~ 150°C (TJ) | Surface Mount | - | - |
|
IRFHM792TRPBFMOSFET 2N-CH 100V 2.3A 8PQFN Infineon Technologies |
3,241 | - |
|
数据表 |
HEXFET® | 8-PowerVDFN | Tape & Reel (TR) | Obsolete | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | 100V | 2.3A | 195mOhm @ 2.9A, 10V | 4V @ 10µA | 6.3nC @ 10V | - | 251pF @ 25V | 2.3W | 8-PQFN (3.3x3.3), Power33 | -55°C ~ 150°C (TJ) | Surface Mount | - | - |
