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场效应晶体管（FET）、MOSFET 阵列
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 配置 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | FET 特性 | 输入电容 (Ciss)（最大值）@ Vds | 功率 - 最大值 | 供应商设备封装 | 工作温度 | 安装类型 | 等级 | 认证 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IPG20N06S415AATMA1MOSFET 2N-CH 60V 20A 8TDSON Infineon Technologies |
2 | - |
|
数据表 |
OptiMOS™ | 8-PowerVDFN | Tape & Reel (TR) | Obsolete | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | 60V | 20A | 15.5mOhm @ 17A, 10V | 4V @ 20µA | 29nC @ 10V | - | 2260pF @ 25V | 50W | PG-TDSON-8-10 | -55°C ~ 175°C (TJ) | Surface Mount, Wettable Flank | Automotive | AEC-Q101 |
|
IPG20N04S408BATMA1MOSFET 2N-CH 40V 20A 8TDSON Infineon Technologies |
4,668 | - |
|
数据表 |
OptiMOS™ T2 | 8-PowerVDFN | Tape & Reel (TR) | Last Time Buy | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | 40V | 20A (Tc) | 7.6mOhm @ 17A, 10V | 4V @ 30µA | 36nC @ 10V | - | 2940pF @ 25V | 65W (Tc) | PG-TDSON-8-10 | -55°C ~ 175°C (TJ) | Surface Mount, Wettable Flank | Automotive | AEC-Q101 |
|
|
IPG20N04S408AATMA1MOSFET 2N-CH 40V 20A 8TDSON Infineon Technologies |
4,071 | - |
|
数据表 |
OptiMOS™ | 8-PowerVDFN | Tape & Reel (TR) | Obsolete | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | 40V | 20A | 7.6mOhm @ 17A, 10V | 4V @ 30µA | 36nC @ 10V | - | 2940pF @ 25V | 65W | PG-TDSON-8-10 | -55°C ~ 175°C (TJ) | Surface Mount, Wettable Flank | Automotive | AEC-Q101 |
|
AUIRFN8459TRMOSFET 2N-CH 40V 50A PQFN Infineon Technologies |
10,414 | - |
|
数据表 |
HEXFET® | 8-PowerTDFN | Tape & Reel (TR) | Last Time Buy | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | 40V | 50A | 5.9mOhm @ 40A, 10V | 3.9V @ 50µA | 60nC @ 10V | - | 2250pF @ 25V | 50W | PQFN (5x6) | -55°C ~ 175°C (TJ) | Surface Mount | - | - |
|
IRF3546MTRPBFMOSFET 4N-CH 25V 16A 41QFN Infineon Technologies |
3,435 | - |
|
数据表 |
- | 41-PowerVFQFN | Tape & Reel (TR) | Obsolete | MOSFET (Metal Oxide) | 4 N-Channel | 25V | 16A (Tc), 20A (Tc) | 3.9mOhm @ 27A, 10V | 2.1V @ 35µA | 15nC @ 4.5V | Logic Level Gate | 1310pF @ 13V | - | 41-PQFN (6x8) | -40°C ~ 150°C (TJ) | Surface Mount | - | - |
|
AUIRF7316QTRMOSFET 2P-CH 30V 8SOIC Infineon Technologies |
298 | - |
|
数据表 |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | MOSFET (Metal Oxide) | 2 P-Channel (Dual) | 30V | - | 58mOhm @ 4.9A, 10V | 3V @ 250µA | 34nC @ 10V | Logic Level Gate | 710pF @ 25V | 2W | 8-SOIC | -55°C ~ 150°C (TJ) | Surface Mount | - | - |
|
FF45MR12W1M1B11BOMA1MOSFET 2N-CH 1200V AG-EASY1BM-2 Infineon Technologies |
6,317 | - |
|
数据表 |
CoolSiC™+ | Module | Bulk | Obsolete | Silicon Carbide (SiC) | 2 N-Channel (Dual) | 1200V (1.2kV) | 25A (Tj) | 45mOhm @ 25A, 15V (Typ) | 5.55V @ 10mA | 62nC @ 15V | - | 1840pF @ 800V | - | AG-EASY1BM-2 | -40°C ~ 150°C (TJ) | Chassis Mount | - | - |
|
DF23MR12W1M1PB11BPSA1MOSFET 2N-CH 1200V 25A AG-EASY1B Infineon Technologies |
24 | - |
|
数据表 |
EasyPACK™ | Module | Bulk | Obsolete | Silicon Carbide (SiC) | 2 N-Channel (Dual) | 1200V (1.2kV) | 25A (Tj) | 45mOhm @ 25A, 15V | 5.55V @ 10mA | 62nC @ 15V | - | 1840pF @ 800V | - | AG-EASY1B-2 | -40°C ~ 150°C (TJ) | Chassis Mount | - | - |
|
FF23MR12W1M1B11BOMA1MOSFET 2N-CH 1200V 50A MODULE Infineon Technologies |
246 | - |
|
数据表 |
CoolSiC™+ | Module | Tray | Obsolete | Silicon Carbide (SiC) | 2 N-Channel (Dual) | 1200V (1.2kV) | 50A | 23mOhm @ 50A, 15V | 5.55V @ 20mA | 125nC @ 15V | - | 3950pF @ 800V | - | Module | -40°C ~ 150°C (TJ) | Chassis Mount | - | - |
|
|
FS45MR12W1M1B11BOMA1MOSFET 6N-CH 1200V AG-EASY1BM-2 Infineon Technologies |
101 | - |
|
数据表 |
CoolSiC™+ | Module | Tray | Obsolete | Silicon Carbide (SiC) | 6 N-Channel (3-Phase Bridge) | 1200V (1.2kV) | 25A (Tj) | 45mOhm @ 25A, 15V (Typ) | 5.55V @ 10mA | 62nC @ 15V | - | 1840pF @ 800V | - | AG-EASY1BM-2 | -40°C ~ 150°C (TJ) | Chassis Mount | - | - |
