WeEn Semiconductors|单个二极管 - 页 26

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	技术	电压 - 直流反向 (Vr)（最大值）	电压 - 正向 (Vf)（最大值）@ If	速度	反向恢复时间 (trr)	电流 - 反向漏电 @ Vr	电容 @ Vr, F	电流 - 平均整流（Io）	等级	认证	安装类型	供应商设备封装	工作温度 - 结点
NUR460/L03,112 DIODE GEN PURP 600V 4A DO201AD WeEn Semiconductors	9,428	-	询价单	数据表	-	DO-201AD, Axial	Tube	Obsolete	Standard	600 V	1.28 V @ 4 A	Fast Recovery =< 500ns, > 200mA (Io)	65 ns	50 µA @ 600 V	-	4A	-	-	Through Hole	DO-201AD	150°C (Max)
BYV10D-600PJ BYV10D-600P/TO252/REEL 13" Q1/T WeEn Semiconductors	3,384	-	询价单	数据表	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	Standard	600 V	1.3 V @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	100 ns	10 µA @ 600 V	-	10A	-	-	Surface Mount	DPAK	175°C
NXPLQSC10650Q DIODE SIL CARB 650V 10A TO220AC WeEn Semiconductors	8,476	-	询价单	数据表	-	TO-220-2	Tube	Obsolete	SiC (Silicon Carbide) Schottky	650 V	1.85 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	230 µA @ 650 V	250pF @ 1V, 1MHz	10A	-	-	Through Hole	TO-220AC	175°C (Max)
NXPSC04650Q DIODE SIL CARB 650V 4A TO220AC WeEn Semiconductors	5,389	-	询价单	数据表	-	TO-220-2	Tube	Obsolete	SiC (Silicon Carbide) Schottky	650 V	1.7 V @ 4 A	No Recovery Time > 500mA (Io)	0 ns	170 µA @ 650 V	130pF @ 1V, 1MHz	4A	-	-	Through Hole	TO-220AC	175°C (Max)
NXPSC06650Q DIODE SIL CARB 650V 6A TO220AC WeEn Semiconductors	7,517	-	询价单	数据表	-	TO-220-2	Tube	Obsolete	SiC (Silicon Carbide) Schottky	650 V	1.7 V @ 6 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 650 V	190pF @ 1V, 1MHz	6A	-	-	Through Hole	TO-220AC	175°C (Max)
NXPSC08650Q DIODE SIL CARB 650V 8A TO220AC WeEn Semiconductors	3,421	-	询价单	数据表	-	TO-220-2	Tube	Obsolete	SiC (Silicon Carbide) Schottky	650 V	1.7 V @ 8 A	No Recovery Time > 500mA (Io)	0 ns	230 µA @ 650 V	260pF @ 1V, 1MHz	8A	-	-	Through Hole	TO-220AC	175°C (Max)
BYR5D-1200PJ DIODE GEN PURP 1.2KV 5A DPAK WeEn Semiconductors	6,289	-	询价单	数据表	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	Standard	1200 V	2.2 V @ 5 A	Fast Recovery =< 500ns, > 200mA (Io)	62 ns	50 µA @ 1200 V	-	5A	-	-	Surface Mount	DPAK	175°C (Max)
BYV29-600PQ DIODE GEN PURP 600V 9A TO220AB WeEn Semiconductors	5,977	-	询价单	数据表	-	TO-220-3	Tube	Active	Standard	600 V	1.3 V @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	75 ns	10 µA @ 600 V	-	9A	-	-	Through Hole	TO-220AB	175°C (Max)
BYV29G-600PQ DIODE GEN PURP 600V 9A I2PAK WeEn Semiconductors	3,102	-	询价单	数据表	-	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Active	Standard	600 V	1.3 V @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	75 ns	10 µA @ 600 V	-	9A	-	-	Through Hole	TO-262 (I2PAK)	175°C (Max)
BYV10X-600PQ DIODE GEN PURP 600V 10A TO220FP WeEn Semiconductors	3,804	-	询价单	数据表	-	TO-220-2 Full Pack, Isolated Tab	Tube	Active	Standard	600 V	2 V @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	20 ns	10 µA @ 600 V	-	10A	-	-	Through Hole	TO-220FP	175°C (Max)

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