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制造商 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点
IDK10G120C5XTMA1

IDK10G120C5XTMA1

DIODE SIC 1.2KV 31.9A TO263-1

Infineon Technologies

835 -
IDK10G120C5XTMA1

数据表

CoolSiC™+ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 1200 V 1.8 V @ 10 A No Recovery Time > 500mA (Io) - 18 µA @ 1200 V 525pF @ 1V, 1MHz 31.9A - - Surface Mount PG-TO263-2-1 -55°C ~ 175°C
TUAS4K

TUAS4K

4A, 800V, STANDARD RECTIFIER

Taiwan Semiconductor Corporation

4,626 -
TUAS4K

数据表

- TO-277, 3-PowerDFN Tape & Reel (TR) Active Standard 800 V 1.1 V @ 4 A Standard Recovery >500ns, > 200mA (Io) - 5 µA @ 800 V 28pF @ 4V, 1MHz 4A - - Surface Mount TO-277A (SMPC4.6U) -55°C ~ 150°C
GP02-20HE3/53

GP02-20HE3/53

DIODE GEN PURP 2KV 250MA DO204AL

Vishay General Semiconductor - Diodes Division

7,862 -
GP02-20HE3/53

数据表

SUPERECTIFIER® DO-204AL, DO-41, Axial Tape & Box (TB) Obsolete Standard 2000 V 3 V @ 1 A Standard Recovery >500ns, > 200mA (Io) 2 µs 5 µA @ 2000 V 3pF @ 4V, 1MHz 250mA - - Through Hole DO-204AL (DO-41) -65°C ~ 175°C
DSEI30-12A

DSEI30-12A

DIODE GEN PURP 1.2KV 26A TO247AD

IXYS

205 -
DSEI30-12A

数据表

- TO-247-2 Tube Active Standard 1200 V 2.55 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 60 ns 750 µA @ 1200 V - 26A - - Through Hole TO-247AD -40°C ~ 150°C
6A6G

6A6G

DIODE GEN PURP 600V 6A R-6

SMC Diode Solutions

6,834 -
6A6G

数据表

- R-6, Axial Tape & Box (TB) Obsolete Standard 600 V 950 mV @ 6 A Standard Recovery >500ns, > 200mA (Io) - 10 µA @ 600 V 150pF @ 4V, 1MHz 6A - - Through Hole R-6 -65°C ~ 175°C
GP02-25HE3/53

GP02-25HE3/53

DIODE GP 2.5KV 250MA DO204AL

Vishay General Semiconductor - Diodes Division

2,210 -
GP02-25HE3/53

数据表

SUPERECTIFIER® DO-204AL, DO-41, Axial Tape & Box (TB) Obsolete Standard 2500 V 3 V @ 1 A Standard Recovery >500ns, > 200mA (Io) 2 µs 5 µA @ 2500 V 3pF @ 4V, 1MHz 250mA - - Through Hole DO-204AL (DO-41) -65°C ~ 175°C
IDW12G65C5XKSA1

IDW12G65C5XKSA1

DIODE SIL CARB 650V 12A TO247-3

Infineon Technologies

268 -
IDW12G65C5XKSA1

数据表

CoolSiC™+ TO-247-3 Tube Active SiC (Silicon Carbide) Schottky 650 V 1.7 V @ 12 A No Recovery Time > 500mA (Io) 0 ns 190 µA @ 650 V 360pF @ 1V, 1MHz 12A - - Through Hole PG-TO247-3 -55°C ~ 175°C
TUAS4G

TUAS4G

4A, 400V, STANDARD RECTIFIER

Taiwan Semiconductor Corporation

2,290 -
TUAS4G

数据表

- TO-277, 3-PowerDFN Tape & Reel (TR) Active Standard 400 V 1.1 V @ 4 A Standard Recovery >500ns, > 200mA (Io) - 5 µA @ 400 V 33pF @ 4V, 1MHz 4A - - Surface Mount TO-277A (SMPC4.6U) -55°C ~ 150°C
TUAS4D

TUAS4D

4A, 200V, STANDARD RECTIFIER

Taiwan Semiconductor Corporation

4,949 -
TUAS4D

数据表

- TO-277, 3-PowerDFN Tape & Reel (TR) Active Standard 200 V 1.1 V @ 4 A Standard Recovery >500ns, > 200mA (Io) - 5 µA @ 200 V 33pF @ 4V, 1MHz 4A - - Surface Mount TO-277A (SMPC4.6U) -55°C ~ 150°C
IDH12G65C5XKSA2

IDH12G65C5XKSA2

DIODE SIL CARB 650V 12A TO220-1

Infineon Technologies

850 -
IDH12G65C5XKSA2

数据表

CoolSiC™+ TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 1.7 V @ 12 A No Recovery Time > 500mA (Io) 0 ns 190 µA @ 650 V 360pF @ 1V, 1MHz 12A - - Through Hole PG-TO220-2-1 -55°C ~ 175°C
TUAS4J

TUAS4J

4A, 600V, STANDARD RECTIFIER

Taiwan Semiconductor Corporation

7,876 -
TUAS4J

数据表

- TO-277, 3-PowerDFN Tape & Reel (TR) Active Standard 600 V 1.1 V @ 4 A Standard Recovery >500ns, > 200mA (Io) - 5 µA @ 600 V 33pF @ 4V, 1MHz 4A - - Surface Mount TO-277A (SMPC4.6U) -55°C ~ 150°C
STPSC15H12D

STPSC15H12D

DIODE SIL CARB 1.2KV 15A TO220AC

STMicroelectronics

2,768 -
STPSC15H12D

数据表

- TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 1200 V 1.5 V @ 15 A No Recovery Time > 500mA (Io) 0 ns 90 µA @ 1200 V 1200pF @ 0V, 1MHz 15A - - Through Hole TO-220AC -40°C ~ 175°C
ES3A-M3/57T

ES3A-M3/57T

DIODE GEN PURP 50V 3A DO214AB

Vishay General Semiconductor - Diodes Division

6,535 -
ES3A-M3/57T

数据表

- DO-214AB, SMC Tape & Reel (TR) Active Standard 50 V 900 mV @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 10 µA @ 50 V 45pF @ 4V, 1MHz 3A - - Surface Mount DO-214AB (SMC) -55°C ~ 150°C
ES3B-M3/57T

ES3B-M3/57T

DIODE GEN PURP 100V 3A DO214AB

Vishay General Semiconductor - Diodes Division

7,047 -
ES3B-M3/57T

数据表

- DO-214AB, SMC Tape & Reel (TR) Active Standard 100 V 900 mV @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 10 µA @ 100 V 45pF @ 4V, 1MHz 3A - - Surface Mount DO-214AB (SMC) -55°C ~ 150°C
ES3C-M3/57T

ES3C-M3/57T

DIODE GEN PURP 150V 3A DO214AB

Vishay General Semiconductor - Diodes Division

5,630 -
ES3C-M3/57T

数据表

- DO-214AB, SMC Tape & Reel (TR) Active Standard 150 V 900 mV @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 10 µA @ 150 V 45pF @ 4V, 1MHz 3A - - Surface Mount DO-214AB (SMC) -55°C ~ 150°C
CDBC260SLR-HF

CDBC260SLR-HF

DIODE SCHOTTKY 60V 2A DO214AB

Comchip Technology

5,009 -
CDBC260SLR-HF

数据表

- DO-214AB, SMC Tape & Reel (TR) Obsolete Schottky 60 V 500 mV @ 2 A Fast Recovery =< 500ns, > 200mA (Io) - 500 µA @ 60 V 30pF @ 4V, 1MHz 2A - - Surface Mount DO-214AB (SMC) -50°C ~ 150°C
SS29-E3/5BT

SS29-E3/5BT

DIODE SCHOTTKY 90V 1.5A DO214AA

Vishay General Semiconductor - Diodes Division

6,157 -
SS29-E3/5BT

数据表

- DO-214AA, SMB Tape & Reel (TR) Active Schottky 90 V 750 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) - 30 µA @ 90 V - 1.5A - - Surface Mount DO-214AA (SMB) -55°C ~ 150°C
SS29HE3_A/I

SS29HE3_A/I

DIODE SCHOTTKY 90V 1.5A DO214AA

Vishay General Semiconductor - Diodes Division

5,756 -
SS29HE3_A/I

数据表

- DO-214AA, SMB Tape & Reel (TR) Active Schottky 90 V 950 mV @ 3 A Fast Recovery =< 500ns, > 200mA (Io) - 30 µA @ 90 V - 1.5A Automotive AEC-Q101 Surface Mount DO-214AA (SMB) -55°C ~ 150°C
GI250-1-E3/54

GI250-1-E3/54

DIODE GEN PURP 1KV 250MA DO204AL

Vishay General Semiconductor - Diodes Division

8,310 -
GI250-1-E3/54

数据表

SUPERECTIFIER® DO-204AL, DO-41, Axial Tape & Reel (TR) Active Standard 1000 V 3.5 V @ 250 mA Standard Recovery >500ns, > 200mA (Io) 2 µs 5 µA @ 1000 V 3pF @ 4V, 1MHz 250mA - - Through Hole DO-204AL (DO-41) -65°C ~ 175°C
GP02-25-M3/73

GP02-25-M3/73

DIODE GP 2.5KV 250MA DO204AL

Vishay General Semiconductor - Diodes Division

9,463 -
GP02-25-M3/73

数据表

- DO-204AL, DO-41, Axial Tape & Box (TB) Obsolete Standard 2500 V 3 V @ 1 A Standard Recovery >500ns, > 200mA (Io) 2 µs 5 µA @ 2500 V 3pF @ 4V, 1MHz 250mA - - Through Hole DO-204AL (DO-41) -65°C ~ 175°C
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