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| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 电压 - 直流反向 (Vr)(最大值) | 电压 - 正向 (Vf)(最大值)@ If | 速度 | 反向恢复时间 (trr) | 电流 - 反向漏电 @ Vr | 电容 @ Vr, F | 电流 - 平均整流(Io) | 等级 | 认证 | 安装类型 | 供应商设备封装 | 工作温度 - 结点 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IDH08SG60CXKSA2DIODE SIL CARB 600V 8A TO220-2-1 |
1,662 | - |
|
数据表 |
CoolSiC™+ | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 600 V | 2.1 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 70 µA @ 600 V | 240pF @ 1V, 1MHz | 8A | - | - | Through Hole | PG-TO220-2-1 | -55°C ~ 175°C |
|
VS-30EPF12-M3DIODE GP 1.2KV 30A TO247AC |
443 | - |
|
数据表 |
- | TO-247-2 | Tube | Active | Standard | 1200 V | 1.41 V @ 30 A | Standard Recovery >500ns, > 200mA (Io) | - | 100 µA @ 1200 V | - | 30A | - | - | Through Hole | TO-247AC Modified | -40°C ~ 150°C |
|
EGP10F-M3/73DIODE GEN PURP 300V 1A DO204AL |
9,595 | - |
|
数据表 |
- | DO-204AL, DO-41, Axial | Tape & Box (TB) | Obsolete | Standard | 300 V | 1.25 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 5 µA @ 300 V | 15pF @ 4V, 1MHz | 1A | - | - | Through Hole | DO-204AL (DO-41) | -65°C ~ 150°C |
|
VS-30EPF06-M3DIODE GP 600V 30A TO247AC |
500 | - |
|
数据表 |
- | TO-247-2 | Tube | Active | Standard | 600 V | 1.41 V @ 30 A | Standard Recovery >500ns, > 200mA (Io) | - | 100 µA @ 600 V | - | 30A | - | - | Through Hole | TO-247AC Modified | -40°C ~ 150°C |
|
EGP10GEHM3/73DIODE GEN PURP 400V 1A DO204AL |
7,027 | - |
|
数据表 |
SUPERECTIFIER® | DO-204AL, DO-41, Axial | Tape & Box (TB) | Obsolete | Standard | 400 V | 1.25 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 5 µA @ 400 V | 15pF @ 4V, 1MHz | 1A | - | - | Through Hole | DO-204AL (DO-41) | -65°C ~ 150°C |
|
C6D10065G-TRDIODE SIL CARB 650V 36A TO263-2 |
1,525 | - |
|
数据表 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 1.4 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 20 µA @ 650 V | 611pF @ 0V, 1MHz | 36A | - | - | Surface Mount | TO-263-2 | -55°C ~ 175°C |
|
EGP10GE-M3/73DIODE GEN PURP 400V 1A DO204AL |
4,351 | - |
|
数据表 |
- | DO-204AL, DO-41, Axial | Tape & Box (TB) | Obsolete | Standard | 400 V | 1.25 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 5 µA @ 400 V | 15pF @ 4V, 1MHz | 1A | - | - | Through Hole | DO-204AL (DO-41) | -65°C ~ 150°C |
|
C6D10065GDIODE SIL CARB 650V 36A TO263-2 |
253 | - |
|
数据表 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 1.4 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 20 µA @ 650 V | 611pF @ 0V, 1MHz | 36A | - | - | Surface Mount | TO-263-2 | -55°C ~ 175°C |
|
MA3XD2100LDIODE SCHOTTKY 15V 1A MINI3-G1 |
5,840 | - |
|
数据表 |
- | TO-236-3, SC-59, SOT-23-3 | Tape & Reel (TR) | Obsolete | Schottky | 15 V | 400 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 12 ns | 1.5 mA @ 6 V | 180pF @ 0V, 1MHz | 1A | - | - | Surface Mount | Mini3-G1 | 125°C (Max) |
|
EGP10GHE3/53DIODE GEN PURP 400V 1A DO204AL |
6,674 | - |
|
数据表 |
SUPERECTIFIER® | DO-204AL, DO-41, Axial | Tape & Box (TB) | Obsolete | Standard | 400 V | 1.25 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 5 µA @ 400 V | 15pF @ 4V, 1MHz | 1A | - | - | Through Hole | DO-204AL (DO-41) | -65°C ~ 150°C |
|
FFSP2065B-F085DIODE SIL CARB 650V 20A TO220-2 |
660 | - |
|
数据表 |
- | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 1.7 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 40 µA @ 650 V | 866pF @ 1V, 100kHz | 20A | Automotive | AEC-Q101 | Through Hole | TO-220-2 | -55°C ~ 175°C |
|
EGP10GHM3/73DIODE GEN PURP 400V 1A DO204AL |
2,318 | - |
|
数据表 |
SUPERECTIFIER® | DO-204AL, DO-41, Axial | Tape & Box (TB) | Obsolete | Standard | 400 V | 1.25 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 5 µA @ 400 V | 15pF @ 4V, 1MHz | 1A | - | - | Through Hole | DO-204AL (DO-41) | -65°C ~ 150°C |
|
|
DSA1-18DDIODE AVALANCHE 1.8KV 2.3A |
262 | - |
|
数据表 |
- | Radial | Bulk | Active | Avalanche | 1800 V | 1.34 V @ 7 A | Standard Recovery >500ns, > 200mA (Io) | - | 700 µA @ 1800 V | - | 2.3A | - | - | Through Hole | - | -40°C ~ 150°C |
|
EGP10G-M3/73DIODE GEN PURP 400V 1A DO204AL |
5,566 | - |
|
数据表 |
- | DO-204AL, DO-41, Axial | Tape & Box (TB) | Obsolete | Standard | 400 V | 1.25 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 5 µA @ 400 V | 15pF @ 4V, 1MHz | 1A | - | - | Through Hole | DO-204AL (DO-41) | -65°C ~ 150°C |
|
CD214B-B2100RDIODE SCHOTTKY 100V 2A 2SMD |
7,895 | - |
|
数据表 |
- | 2-SMD, No Lead | Tape & Reel (TR) | Active | Schottky | 100 V | 850 mV @ 2 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200 µA @ 100 V | 115pF @ 4V, 1MHz | 2A | - | - | Surface Mount | 2-SMD | -55°C ~ 150°C |
|
FFSD2065BDIODE SIL CARB 650V 23.4A DPAK |
1,771 | - |
|
数据表 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 1.7 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 40 µA @ 650 V | 866pF @ 1V, 100kHz | 23.4A | - | - | Surface Mount | TO-252 (DPAK) | -55°C ~ 175°C |
|
FGP10D-M3/73DIODE GEN PURP 200V 1A DO204AL |
2,880 | - |
|
数据表 |
- | DO-204AL, DO-41, Axial | Tape & Box (TB) | Obsolete | Standard | 200 V | 950 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 2 µA @ 200 V | 25pF @ 4V, 1MHz | 1A | - | - | Through Hole | DO-204AL (DO-41) | -65°C ~ 175°C |
|
CD214B-B3100RDIODE SCHOTTKY 100V 3A 2SMD |
3,957 | - |
|
数据表 |
- | 2-SMD, No Lead | Tape & Reel (TR) | Active | Schottky | 100 V | 850 mV @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500 µA @ 100 V | 180pF @ 4V, 1MHz | 3A | - | - | Surface Mount | 2-SMD | -55°C ~ 150°C |
|
TUAS4M4A, 1000V, STANDARD RECTIFIER |
2,099 | - |
|
数据表 |
- | TO-277, 3-PowerDFN | Tape & Reel (TR) | Active | Standard | 1000 V | 1.1 V @ 4 A | Standard Recovery >500ns, > 200mA (Io) | - | 5 µA @ 1000 V | 28pF @ 4V, 1MHz | 4A | - | - | Surface Mount | TO-277A (SMPC4.6U) | -55°C ~ 150°C |
|
GP02-20-E3/53DIODE GEN PURP 2KV 250MA DO204AL |
3,700 | - |
|
数据表 |
- | DO-204AL, DO-41, Axial | Tape & Box (TB) | Active | Standard | 2000 V | 3 V @ 1 A | Standard Recovery >500ns, > 200mA (Io) | 2 µs | 5 µA @ 2000 V | 3pF @ 4V, 1MHz | 250mA | - | - | Through Hole | DO-204AL (DO-41) | -65°C ~ 175°C |
