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制造商 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点
IDH08SG60CXKSA2

IDH08SG60CXKSA2

DIODE SIL CARB 600V 8A TO220-2-1

Infineon Technologies

1,662 -
IDH08SG60CXKSA2

数据表

CoolSiC™+ TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 600 V 2.1 V @ 8 A No Recovery Time > 500mA (Io) 0 ns 70 µA @ 600 V 240pF @ 1V, 1MHz 8A - - Through Hole PG-TO220-2-1 -55°C ~ 175°C
VS-30EPF12-M3

VS-30EPF12-M3

DIODE GP 1.2KV 30A TO247AC

Vishay General Semiconductor - Diodes Division

443 -
VS-30EPF12-M3

数据表

- TO-247-2 Tube Active Standard 1200 V 1.41 V @ 30 A Standard Recovery >500ns, > 200mA (Io) - 100 µA @ 1200 V - 30A - - Through Hole TO-247AC Modified -40°C ~ 150°C
EGP10F-M3/73

EGP10F-M3/73

DIODE GEN PURP 300V 1A DO204AL

Vishay General Semiconductor - Diodes Division

9,595 -
EGP10F-M3/73

数据表

- DO-204AL, DO-41, Axial Tape & Box (TB) Obsolete Standard 300 V 1.25 V @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 5 µA @ 300 V 15pF @ 4V, 1MHz 1A - - Through Hole DO-204AL (DO-41) -65°C ~ 150°C
VS-30EPF06-M3

VS-30EPF06-M3

DIODE GP 600V 30A TO247AC

Vishay General Semiconductor - Diodes Division

500 -
VS-30EPF06-M3

数据表

- TO-247-2 Tube Active Standard 600 V 1.41 V @ 30 A Standard Recovery >500ns, > 200mA (Io) - 100 µA @ 600 V - 30A - - Through Hole TO-247AC Modified -40°C ~ 150°C
EGP10GEHM3/73

EGP10GEHM3/73

DIODE GEN PURP 400V 1A DO204AL

Vishay General Semiconductor - Diodes Division

7,027 -
EGP10GEHM3/73

数据表

SUPERECTIFIER® DO-204AL, DO-41, Axial Tape & Box (TB) Obsolete Standard 400 V 1.25 V @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 5 µA @ 400 V 15pF @ 4V, 1MHz 1A - - Through Hole DO-204AL (DO-41) -65°C ~ 150°C
C6D10065G-TR

C6D10065G-TR

DIODE SIL CARB 650V 36A TO263-2

Wolfspeed, Inc.

1,525 -
C6D10065G-TR

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 1.4 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 20 µA @ 650 V 611pF @ 0V, 1MHz 36A - - Surface Mount TO-263-2 -55°C ~ 175°C
EGP10GE-M3/73

EGP10GE-M3/73

DIODE GEN PURP 400V 1A DO204AL

Vishay General Semiconductor - Diodes Division

4,351 -
EGP10GE-M3/73

数据表

- DO-204AL, DO-41, Axial Tape & Box (TB) Obsolete Standard 400 V 1.25 V @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 5 µA @ 400 V 15pF @ 4V, 1MHz 1A - - Through Hole DO-204AL (DO-41) -65°C ~ 150°C
C6D10065G

C6D10065G

DIODE SIL CARB 650V 36A TO263-2

Wolfspeed, Inc.

253 -
C6D10065G

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Active SiC (Silicon Carbide) Schottky 650 V 1.4 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 20 µA @ 650 V 611pF @ 0V, 1MHz 36A - - Surface Mount TO-263-2 -55°C ~ 175°C
MA3XD2100L

MA3XD2100L

DIODE SCHOTTKY 15V 1A MINI3-G1

Panasonic Electronic Components

5,840 -
MA3XD2100L

数据表

- TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Obsolete Schottky 15 V 400 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 12 ns 1.5 mA @ 6 V 180pF @ 0V, 1MHz 1A - - Surface Mount Mini3-G1 125°C (Max)
EGP10GHE3/53

EGP10GHE3/53

DIODE GEN PURP 400V 1A DO204AL

Vishay General Semiconductor - Diodes Division

6,674 -
EGP10GHE3/53

数据表

SUPERECTIFIER® DO-204AL, DO-41, Axial Tape & Box (TB) Obsolete Standard 400 V 1.25 V @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 5 µA @ 400 V 15pF @ 4V, 1MHz 1A - - Through Hole DO-204AL (DO-41) -65°C ~ 150°C
FFSP2065B-F085

FFSP2065B-F085

DIODE SIL CARB 650V 20A TO220-2

onsemi

660 -
FFSP2065B-F085

数据表

- TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 1.7 V @ 20 A No Recovery Time > 500mA (Io) 0 ns 40 µA @ 650 V 866pF @ 1V, 100kHz 20A Automotive AEC-Q101 Through Hole TO-220-2 -55°C ~ 175°C
EGP10GHM3/73

EGP10GHM3/73

DIODE GEN PURP 400V 1A DO204AL

Vishay General Semiconductor - Diodes Division

2,318 -
EGP10GHM3/73

数据表

SUPERECTIFIER® DO-204AL, DO-41, Axial Tape & Box (TB) Obsolete Standard 400 V 1.25 V @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 5 µA @ 400 V 15pF @ 4V, 1MHz 1A - - Through Hole DO-204AL (DO-41) -65°C ~ 150°C
DSA1-18D

DSA1-18D

DIODE AVALANCHE 1.8KV 2.3A

IXYS

262 -
DSA1-18D

数据表

- Radial Bulk Active Avalanche 1800 V 1.34 V @ 7 A Standard Recovery >500ns, > 200mA (Io) - 700 µA @ 1800 V - 2.3A - - Through Hole - -40°C ~ 150°C
EGP10G-M3/73

EGP10G-M3/73

DIODE GEN PURP 400V 1A DO204AL

Vishay General Semiconductor - Diodes Division

5,566 -
EGP10G-M3/73

数据表

- DO-204AL, DO-41, Axial Tape & Box (TB) Obsolete Standard 400 V 1.25 V @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 5 µA @ 400 V 15pF @ 4V, 1MHz 1A - - Through Hole DO-204AL (DO-41) -65°C ~ 150°C
CD214B-B2100R

CD214B-B2100R

DIODE SCHOTTKY 100V 2A 2SMD

Bourns Inc.

7,895 -
CD214B-B2100R

数据表

- 2-SMD, No Lead Tape & Reel (TR) Active Schottky 100 V 850 mV @ 2 A Fast Recovery =< 500ns, > 200mA (Io) - 200 µA @ 100 V 115pF @ 4V, 1MHz 2A - - Surface Mount 2-SMD -55°C ~ 150°C
FFSD2065B

FFSD2065B

DIODE SIL CARB 650V 23.4A DPAK

onsemi

1,771 -
FFSD2065B

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 1.7 V @ 20 A No Recovery Time > 500mA (Io) 0 ns 40 µA @ 650 V 866pF @ 1V, 100kHz 23.4A - - Surface Mount TO-252 (DPAK) -55°C ~ 175°C
FGP10D-M3/73

FGP10D-M3/73

DIODE GEN PURP 200V 1A DO204AL

Vishay General Semiconductor - Diodes Division

2,880 -
FGP10D-M3/73

数据表

- DO-204AL, DO-41, Axial Tape & Box (TB) Obsolete Standard 200 V 950 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 2 µA @ 200 V 25pF @ 4V, 1MHz 1A - - Through Hole DO-204AL (DO-41) -65°C ~ 175°C
CD214B-B3100R

CD214B-B3100R

DIODE SCHOTTKY 100V 3A 2SMD

Bourns Inc.

3,957 -
CD214B-B3100R

数据表

- 2-SMD, No Lead Tape & Reel (TR) Active Schottky 100 V 850 mV @ 3 A Fast Recovery =< 500ns, > 200mA (Io) - 500 µA @ 100 V 180pF @ 4V, 1MHz 3A - - Surface Mount 2-SMD -55°C ~ 150°C
TUAS4M

TUAS4M

4A, 1000V, STANDARD RECTIFIER

Taiwan Semiconductor Corporation

2,099 -
TUAS4M

数据表

- TO-277, 3-PowerDFN Tape & Reel (TR) Active Standard 1000 V 1.1 V @ 4 A Standard Recovery >500ns, > 200mA (Io) - 5 µA @ 1000 V 28pF @ 4V, 1MHz 4A - - Surface Mount TO-277A (SMPC4.6U) -55°C ~ 150°C
GP02-20-E3/53

GP02-20-E3/53

DIODE GEN PURP 2KV 250MA DO204AL

Vishay General Semiconductor - Diodes Division

3,700 -
GP02-20-E3/53

数据表

- DO-204AL, DO-41, Axial Tape & Box (TB) Active Standard 2000 V 3 V @ 1 A Standard Recovery >500ns, > 200mA (Io) 2 µs 5 µA @ 2000 V 3pF @ 4V, 1MHz 250mA - - Through Hole DO-204AL (DO-41) -65°C ~ 175°C
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