| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 电压 - 直流反向 (Vr)(最大值) | 电压 - 正向 (Vf)(最大值)@ If | 速度 | 反向恢复时间 (trr) | 电流 - 反向漏电 @ Vr | 电容 @ Vr, F | 电流 - 平均整流(Io) | 等级 | 认证 | 安装类型 | 供应商设备封装 | 工作温度 - 结点 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
APT40DQ120BGDIODE GP 1.2KV 40A TO247 Microchip Technology |
251 | - |
|
数据表 |
- | TO-247-2 | Tube | Active | Standard | 1200 V | 3.3 V @ 40 A | Fast Recovery =< 500ns, > 200mA (Io) | 350 ns | 100 µA @ 1200 V | - | 40A | - | - | Through Hole | TO-247 [B] | -55°C ~ 175°C |
|
|
JAN1N647-1DIODE GEN PURP 400V 400MA DO35 Microchip Technology |
7,268 | - |
|
数据表 |
- | DO-204AH, DO-35, Axial | Bulk | Active | Standard | 400 V | 1 V @ 400 mA | Standard Recovery >500ns, > 200mA (Io) | - | 50 nA @ 400 V | - | 400mA | Military | MIL-PRF-19500/240 | Through Hole | DO-204AH (DO-35) | -65°C ~ 175°C |
|
APT60DQ100BGDIODE GEN PURP 1KV 60A TO247 Microchip Technology |
244 | - |
|
数据表 |
- | TO-247-2 | Tube | Active | Standard | 1000 V | 3 V @ 60 A | Fast Recovery =< 500ns, > 200mA (Io) | 255 ns | 100 µA @ 1000 V | - | 60A | - | - | Through Hole | TO-247 [B] | -55°C ~ 175°C |
|
APT40DQ100BGDIODE GEN PURP 1KV 40A TO247 Microchip Technology |
392 | - |
|
数据表 |
- | TO-247-2 | Tube | Active | Standard | 1000 V | 3 V @ 40 A | Fast Recovery =< 500ns, > 200mA (Io) | 250 ns | 100 µA @ 1000 V | - | 40A | - | - | Through Hole | TO-247 [B] | -55°C ~ 175°C |
|
1N649-1/TRDIODE GEN PURP 600V 400MA DO35 Microchip Technology |
206 | - |
|
数据表 |
- | DO-204AH, DO-35, Axial | Tape & Reel (TR) | Active | Standard | 600 V | 1 V @ 400 mA | Standard Recovery >500ns, > 200mA (Io) | - | 50 nA @ 600 V | - | 400mA | - | - | Through Hole | DO-204AH (DO-35) | -65°C ~ 175°C |
|
APT15D100BGDIODE GEN PURP 1KV 15A TO247 Microchip Technology |
283 | - |
|
数据表 |
- | TO-247-2 | Tube | Active | Standard | 1000 V | 2.3 V @ 15 A | Fast Recovery =< 500ns, > 200mA (Io) | 260 ns | 250 µA @ 1000 V | - | 15A | - | - | Through Hole | TO-247 [B] | -55°C ~ 175°C |
|
APT30D40BGDIODE GP 400V 30A TO247 Microchip Technology |
345 | - |
|
数据表 |
- | TO-247-2 | Tube | Active | Standard | 400 V | 1.5 V @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | 32 ns | 250 µA @ 400 V | - | 30A | - | - | Through Hole | TO-247 [B] | -55°C ~ 175°C |
|
UPS840/TR13DIODE SCHOTTKY 40V 8A POWERMITE3 Microchip Technology |
1,835 | - |
|
数据表 |
- | Powermite®3 | Tape & Reel (TR) | Active | Schottky | 40 V | 450 mV @ 8 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 5 mA @ 40 V | - | 8A | - | - | Surface Mount | Powermite 3 | -55°C ~ 125°C |
|
|
JANTX1N3595-1DIODE GEN PURP 125V 150MA DO35 Microchip Technology |
174 | - |
|
数据表 |
- | DO-204AH, DO-35, Axial | Bulk | Active | Standard | 125 V | 920 mV @ 100 mA | Small Signal =< 200mA (Io), Any Speed | 3 µs | 1 nA @ 125 V | - | 150mA | Military | MIL-S-19500-241 | Through Hole | DO-204AH (DO-35) | -65°C ~ 175°C |
|
|
1N4245DIODE GEN PURP 200V 1A AXIAL Microchip Technology |
264 | - |
|
数据表 |
- | A, Axial | Bulk | Active | Standard | 200 V | 1.3 V @ 3 A | Standard Recovery >500ns, > 200mA (Io) | 5 µs | 1 µA @ 200 V | - | 1A | - | - | Through Hole | A, Axial | -65°C ~ 175°C |