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单个二极管
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 电压 - 直流反向 (Vr)（最大值） | 电压 - 正向 (Vf)（最大值）@ If | 速度 | 反向恢复时间 (trr) | 电流 - 反向漏电 @ Vr | 电容 @ Vr, F | 电流 - 平均整流（Io） | 等级 | 认证 | 安装类型 | 供应商设备封装 | 工作温度 - 结点 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
1N5617USDIODE GEN PURP 400V 1A D-5A Microchip Technology |
608 | - |
|
数据表 |
- | SQ-MELF, A | Bulk | Active | Standard | 400 V | 1.6 V @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | 500 nA @ 400 V | 35pF @ 12V, 1MHz | 1A | - | - | Surface Mount | D-5A | -65°C ~ 175°C |
|
JANTX1N5804DIODE GEN PURP 100V 1A AXIAL Microchip Technology |
148 | - |
|
数据表 |
- | A, Axial | Bulk | Active | Standard | 100 V | 875 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 25 ns | 1 µA @ 100 V | 25pF @ 10V, 1MHz | 1A | Military | MIL-PRF-19500/477 | Through Hole | A, Axial | -65°C ~ 175°C |
|
1N5711-1DIODE SCHOTTKY 70V 33MA DO35 Microchip Technology |
836 | - |
|
数据表 |
- | DO-204AH, DO-35, Axial | Bulk | Active | Schottky | 70 V | 1 V @ 15 mA | Small Signal =< 200mA (Io), Any Speed | - | 200 nA @ 50 V | 2pF @ 0V, 1MHz | 33mA | - | - | Through Hole | DO-204AH (DO-35) | -65°C ~ 150°C |
|
1N5553DIODE GEN PURP 800V 3A AXIAL Microchip Technology |
251 | - |
|
数据表 |
- | B, Axial | Bulk | Active | Standard | 800 V | 1.2 V @ 9 A | Standard Recovery >500ns, > 200mA (Io) | 2 µs | 1 µA @ 800 V | - | 3A | - | - | Through Hole | B, Axial | -65°C ~ 175°C |
|
|
1N5551USDIODE GEN PURP 400V 3A D-5B Microchip Technology |
165 | - |
|
数据表 |
- | SQ-MELF, E | Bulk | Active | Standard | 400 V | 1.2 V @ 9 A | Standard Recovery >500ns, > 200mA (Io) | 2 µs | 1 µA @ 400 V | - | 3A | - | - | Surface Mount | D-5B | -65°C ~ 175°C |
|
MSC030SDA070BDIODE SIL CARBIDE 700V 60A TO247 Microchip Technology |
118 | - |
|
数据表 |
- | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 700 V | 1.8 V @ 30 A | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 700 V | 1200pF @ 1V, 1MHz | 60A | - | - | Through Hole | TO-247 | -55°C ~ 175°C |
|
1N3595USDIODE GEN PURP 4A B SQ-MELF Microchip Technology |
158 | - |
|
数据表 |
- | SQ-MELF, B | Bulk | Active | Standard | - | 1 V @ 200 mA | Standard Recovery >500ns, > 200mA (Io) | 3 µs | 1 nA @ 125 V | - | 4A | - | - | Surface Mount | B, SQ-MELF | -65°C ~ 150°C |
|
CDLL5711DIODE SCHOTTKY 50V 33MA DO213AA Microchip Technology |
265 | - |
|
数据表 |
- | DO-213AA | Bulk | Active | Schottky | 50 V | 410 mV @ 1 mA | Small Signal =< 200mA (Io), Any Speed | - | 200 nA @ 50 V | 2pF @ 0V, 1MHz | 33mA | - | - | Surface Mount | DO-213AA | -65°C ~ 150°C |
|
1N5416USDIODE GEN PURP 100V 3A D-5B Microchip Technology |
111 | - |
|
数据表 |
- | SQ-MELF, E | Bulk | Active | Standard | 100 V | 1.5 V @ 9 A | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | 1 µA @ 100 V | - | 3A | - | - | Surface Mount | D-5B | -65°C ~ 175°C |
|
MSC030SDA120BDIODE SIL CARB 1.2KV 30A TO247 Microchip Technology |
1,046 | - |
|
数据表 |
- | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 1.5 V @ 30 A | No Recovery Time > 500mA (Io) | 0 ns | - | - | 30A | - | - | Through Hole | TO-247 | - |
