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| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 电压 - 直流反向 (Vr)（最大值） | 电压 - 正向 (Vf)（最大值）@ If | 速度 | 反向恢复时间 (trr) | 电流 - 反向漏电 @ Vr | 电容 @ Vr, F | 电流 - 平均整流（Io） | 等级 | 认证 | 安装类型 | 供应商设备封装 | 工作温度 - 结点 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
JANTXV1N5809USDIODE GEN PURP 100V 3A B SQ-MELF Microchip Technology |
166 | - |
|
数据表 |
- | SQ-MELF, B | Bulk | Active | Standard | 100 V | 875 mV @ 4 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 5 µA @ 100 V | 60pF @ 10V, 1MHz | 3A | Military | MIL-PRF-19500/477 | Surface Mount | B, SQ-MELF | -65°C ~ 175°C |
|
|
JANTXV1N5811USDIODE GEN PURP 150V 3A B SQ-MELF Microchip Technology |
148 | - |
|
数据表 |
- | SQ-MELF, B | Bulk | Active | Standard | 150 V | 875 mV @ 4 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 5 µA @ 150 V | 60pF @ 10V, 1MHz | 3A | Military | MIL-PRF-19500/477 | Surface Mount | B, SQ-MELF | -65°C ~ 175°C |
|
JANS1N6642DIODE GEN PURP 75V 300MA DO204AH Microchip Technology |
434 | - |
|
数据表 |
- | DO-204AH, DO-35, Axial | Bulk | Active | Standard | 75 V | 1.2 V @ 100 mA | Fast Recovery =< 500ns, > 200mA (Io) | 5 ns | 500 nA @ 75 V | 5pF @ 0V, 1MHz | 300mA | Military | MIL-PRF-19500/578 | Through Hole | DO-204AH (DO-35) | -65°C ~ 175°C |
|
APTDF400U120GDIODE GEN PURP 1.2KV 450A LP4 Microchip Technology |
478 | - |
|
数据表 |
- | LP4 | Bulk | Active | Standard | 1200 V | 2.5 V @ 500 A | Fast Recovery =< 500ns, > 200mA (Io) | 110 ns | 2.5 mA @ 1200 V | - | 450A | - | - | Chassis Mount | LP4 | - |
|
MSC030SDA330BDIODE SIL CARB 3.3KV 30A TO247 Microchip Technology |
36 | - |
|
数据表 |
- | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 3300 V | - | No Recovery Time > 500mA (Io) | 0 ns | - | - | 30A | - | - | Through Hole | TO-247 | - |
|
|
MCX5622UFR,FRR Microchip Technology |
45 | - |
|
数据表 |
- | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
JANS1N5822USDIODE SCHOTTKY 40V 3A B SQ-MELF Microchip Technology |
121 | - |
|
数据表 |
- | SQ-MELF, B | Bulk | Active | Schottky | 40 V | 500 mV @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | - | - | - | 3A | Military | MIL-PRF-19500/620 | Surface Mount | B, SQ-MELF | -65°C ~ 150°C |
|
|
CD4148WDDIODE GEN PURP 75V 200MA DIE Microchip Technology |
4,766 | - |
|
数据表 |
- | Die | Bulk | Active | Standard | 75 V | 1.2 V @ 100 mA | Small Signal =< 200mA (Io), Any Speed | 5 ns | 500 nA @ 75 V | - | 200mA | - | - | Surface Mount | Die | -55°C ~ 175°C |
|
UPS120EE3/TR7DIODE SCHOTTKY 20V 1A POWERMITE1 Microchip Technology |
8,792 | - |
|
数据表 |
- | DO-216AA | Tape & Reel (TR) | Active | Schottky | 20 V | 530 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 10 µA @ 20 V | - | 1A | - | - | Surface Mount | Powermite 1 (DO216-AA) | -55°C ~ 125°C |
|
UPS540E3/TR13DIODE SCHOTTKY 40V 5A POWERMITE3 Microchip Technology |
5,000 | - |
|
数据表 |
- | Powermite®3 | Tape & Reel (TR) | Active | Schottky | 40 V | 540 mV @ 5 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500 µA @ 40 V | 250pF @ 4V, 1MHz | 5A | - | - | Surface Mount | Powermite 3 | -55°C ~ 125°C |
