Microchip Technology|单个二极管 - 页 503

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	技术	电压 - 直流反向 (Vr)（最大值）	电压 - 正向 (Vf)（最大值）@ If	速度	反向恢复时间 (trr)	电流 - 反向漏电 @ Vr	电容 @ Vr, F	电流 - 平均整流（Io）	等级	认证	安装类型	供应商设备封装	工作温度 - 结点
MSC010SDA070B DIODE SIL CARBIDE 700V 24A TO247 Microchip Technology	122	-	询价单	数据表	-	TO-247-2	Tube	Active	SiC (Silicon Carbide) Schottky	700 V	1.8 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 700 V	353pF @ 1V, 1MHz	24A	-	-	Through Hole	TO-247	-55°C ~ 175°C
MSC010SDA120K DIODE SIL CARB 1.2KV 10A TO220 Microchip Technology	178	-	询价单	数据表	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	1.5 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	-	-	10A	-	-	Through Hole	TO-220-2	-
CD5819 DIODE SCHOTTKY 40V 1A DIE Microchip Technology	392	-	询价单	数据表	-	Die	Bulk	Active	Schottky	40 V	600 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 40 V	-	1A	Military	MIL-PRF-19500/586	Surface Mount	Die	-55°C ~ 125°C
MSC010SDA120B DIODE SIL CARB 1.2KV 10A TO247 Microchip Technology	1,511	-	询价单	数据表	-	TO-247-2	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	1.5 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	-	-	10A	-	-	Through Hole	TO-247	-
JAN1N5552 DIODE GEN PURP 600V 3A AXIAL Microchip Technology	152	-	询价单	数据表	-	B, Axial	Bulk	Active	Standard	600 V	1.2 V @ 9 A	Standard Recovery >500ns, > 200mA (Io)	2 µs	1 µA @ 600 V	-	3A	Military	MIL-PRF-19500/420	Through Hole	B, Axial	-65°C ~ 175°C
1N5619 DIODE GEN PURP 600V 1A AXIAL Microchip Technology	301	-	询价单	数据表	-	A, Axial	Bulk	Active	Standard	600 V	1.6 V @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	250 ns	500 nA @ 600 V	25pF @ 12V, 1MHz	1A	-	-	Through Hole	A, Axial	-65°C ~ 175°C
1N5806E3 DIODE GEN PURP 150V 1A A AXIAL Microchip Technology	123	-	询价单	数据表	-	Axial	Bulk	Active	Standard	150 V	875 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	25 ns	1 µA @ 150 V	25pF @ 10V, 1MHz	1A	-	-	Through Hole	A, Axial	-65°C ~ 175°C
APT60D100BG DIODE GEN PURP 1KV 60A TO247 Microchip Technology	839	-	询价单	数据表	-	TO-247-2	Tube	Active	Standard	1000 V	2.5 V @ 60 A	Fast Recovery =< 500ns, > 200mA (Io)	280 ns	250 µA @ 1000 V	-	60A	-	-	Through Hole	TO-247 [B]	-55°C ~ 175°C
1N5806USE3 DIODE GEN PURP 150V 1A D-5A Microchip Technology	148	-	询价单	数据表	-	SQ-MELF, A	Bulk	Active	Standard	150 V	975 mV @ 2.5 A	Fast Recovery =< 500ns, > 200mA (Io)	25 ns	1 µA @ 150 V	25pF @ 10V, 1MHz	1A	-	-	Surface Mount	D-5A	-65°C ~ 175°C
CDLL5819 DIODE SCHOTTKY 45V 1A DO213AB Microchip Technology	144	-	询价单	数据表	-	DO-213AB, MELF	Bulk	Active	Schottky	45 V	490 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	-	50 µA @ 45 V	70pF @ 5V, 1MHz	1A	-	-	Surface Mount	DO-213AB	-65°C ~ 125°C

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