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| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 电压 - 直流反向 (Vr)（最大值） | 电压 - 正向 (Vf)（最大值）@ If | 速度 | 反向恢复时间 (trr) | 电流 - 反向漏电 @ Vr | 电容 @ Vr, F | 电流 - 平均整流（Io） | 等级 | 认证 | 安装类型 | 供应商设备封装 | 工作温度 - 结点 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
MSC020SDA120SDIODE SIL CARB 1.2KV 49A D3PAK Microchip Technology |
869 | - |
|
数据表 |
- | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 1.8 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 1200 V | 1130pF @ 1V, 1MHz | 49A | - | - | Surface Mount | D3PAK | -55°C ~ 175°C |
|
JANTX1N5190DIODE GEN PURP 600V 3A AXIAL Microchip Technology |
189 | - |
|
数据表 |
- | B, Axial | Bulk | Active | Standard | 600 V | 1.5 V @ 9 A | Fast Recovery =< 500ns, > 200mA (Io) | 400 ns | 2 µA @ 600 V | - | 3A | Military | MIL-PRF-19500/424 | Through Hole | B, Axial | - |
|
MSC050SDA070BCTDIODE SIL CARB 700V 88A TO247-3 Microchip Technology |
274 | - |
|
数据表 |
- | TO-247-3 | Tube | Active | SiC (Silicon Carbide) Schottky | 700 V | 1.8 V @ 50 A | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 700 V | 2034pF @ 1V, 1MHz | 88A | - | - | Through Hole | TO-247-3 | -55°C ~ 175°C |
|
|
UES1306HR2/TRDIODE GEN PURP 400V 5A B AXIAL Microchip Technology |
193 | - |
|
数据表 |
- | B, Axial | Tape & Reel (TR) | Active | Standard | 400 V | 1 V @ 5 A | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 20 µA @ 400 V | - | 5A | - | - | Through Hole | B, Axial | - |
|
JAN1N457DIODE GEN PURP 70V 150MA DO35 Microchip Technology |
9,259 | - |
|
数据表 |
- | DO-204AH, DO-35, Axial | Bulk | Active | Standard | 70 V | 1 V @ 100 mA | Small Signal =< 200mA (Io), Any Speed | - | 25 nA @ 70 V | - | 150mA | Military | MIL-PRF-19500/193 | Through Hole | DO-204AH (DO-35) | -65°C ~ 150°C |
|
|
JAN1N458DIODE GEN PURP 70V 150MA DO35 Microchip Technology |
4,102 | - |
|
数据表 |
- | DO-204AH, DO-35, Axial | Bulk | Active | Standard | 70 V | 1 V @ 100 mA | Small Signal =< 200mA (Io), Any Speed | - | 25 nA @ 70 V | - | 150mA | Military | MIL-PRF-19500/193 | Through Hole | DO-204AH (DO-35) | -65°C ~ 150°C |
|
JANTX1N3164DIODE GP 200V 300A DO205AB DO9 Microchip Technology |
6,733 | - |
|
数据表 |
- | DO-205AB, DO-9, Stud | Bulk | Active | Standard | 200 V | 1.55 V @ 940 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 10 mA @ 200 V | - | 300A | Military | MIL-PRF-19500/211 | Chassis, Stud Mount | DO-205AB (DO-9) | -65°C ~ 200°C |
|
JANTX1N3289DIODE GEN PURP 200V 100A DO205AA Microchip Technology |
3,361 | - |
|
数据表 |
- | DO-205AA, DO-8, Stud | Bulk | Active | Standard | 200 V | 1.55 V @ 310 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 10 mA @ 200 V | - | 100A | Military | MIL-PRF-19500/246 | Stud Mount | DO-205AA (DO-8) | -65°C ~ 200°C |
|
|
JANTX1N485BDIODE GEN PURP 180V 200MA DO35 Microchip Technology |
2,606 | - |
|
数据表 |
- | DO-204AH, DO-35, Axial | Bulk | Active | Standard | 180 V | 1 V @ 100 mA | Small Signal =< 200mA (Io), Any Speed | - | 25 nA @ 180 V | - | 200mA | Military | MIL-PRF-19500/118 | Through Hole | DO-204AH (DO-35) | -65°C ~ 175°C |
|
|
JANTX1N486BDIODE GEN PURP 225V 200MA DO35 Microchip Technology |
8,945 | - |
|
数据表 |
- | DO-204AH, DO-35, Axial | Bulk | Active | Standard | 225 V | 1 V @ 100 mA | Small Signal =< 200mA (Io), Any Speed | - | 25 nA @ 225 V | - | 200mA | Military | MIL-PRF-19500/118 | Through Hole | DO-204AH (DO-35) | -65°C ~ 175°C |
