| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 电压 - 直流反向 (Vr)(最大值) | 电压 - 正向 (Vf)(最大值)@ If | 速度 | 反向恢复时间 (trr) | 电流 - 反向漏电 @ Vr | 电容 @ Vr, F | 电流 - 平均整流(Io) | 等级 | 认证 | 安装类型 | 供应商设备封装 | 工作温度 - 结点 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
UES1305E3DIODE GEN PURP 300V 3A B AXIAL Microchip Technology |
3,797 | - |
|
数据表 |
- | B, Axial | Bulk | Active | Standard | 300 V | 1.25 V @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 20 µA @ 300 V | - | 3A | - | - | Through Hole | B, Axial | -55°C ~ 150°C |
|
UES1305DIODE GEN PURP 300V 3A AXIAL Microchip Technology |
9,535 | - |
|
数据表 |
- | B, Axial | Bulk | Active | Standard | 300 V | 1.25 V @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 20 µA @ 300 V | - | 3A | - | - | Through Hole | B, Axial | -55°C ~ 150°C |
|
JAN1N1124ADIODE GEN PURP 200V DO203AA Microchip Technology |
6,647 | - |
|
数据表 |
- | DO-203AA, DO-4, Stud | Bulk | Active | Standard | 200 V | 2.2 V @ 10 A | Standard Recovery >500ns, > 200mA (Io) | - | 5 µA @ 200 V | - | - | Military | MIL-PRF-19500/260 | Stud Mount | DO-203AA (DO-4) | -65°C ~ 150°C |
|
JANTX1N3168DIODE GP 400V 300A DO205AB DO9 Microchip Technology |
8,733 | - |
|
数据表 |
- | DO-205AB, DO-9, Stud | Bulk | Active | Standard | 400 V | 1.55 V @ 940 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 mA @ 400 V | - | 300A | Military | MIL-PRF-19500/211 | Stud Mount | DO-205AB (DO-9) | -65°C ~ 200°C |
|
UES1303/TRDIODE GEN PURP 150V 6A Microchip Technology |
3,763 | - |
|
数据表 |
- | B, Axial | Tape & Reel (TR) | Active | Standard | 150 V | 925 mV @ 6 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 5 µA @ 150 V | - | 6A | - | - | Through Hole | B, Axial | 175°C (Max) |
|
UES1305E3/TRDIODE GP REV 300V 3A B AXIAL Microchip Technology |
3,083 | - |
|
数据表 |
- | B, Axial | Tape & Reel (TR) | Active | Standard, Reverse Polarity | 300 V | 1.25 V @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 20 µA @ 300 V | - | 3A | - | - | Through Hole | B, Axial | -55°C ~ 150°C |
|
JANHCB2N5415BJT TRANSISTOR Microchip Technology |
4,494 | - |
|
数据表 |
- | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
JANHCB2N5416BJT TRANSISTOR Microchip Technology |
6,352 | - |
|
数据表 |
- | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
UES1305/TRDIODE GP REV 300V 3A B AXIAL Microchip Technology |
4,325 | - |
|
数据表 |
- | B, Axial | Tape & Reel (TR) | Active | Standard, Reverse Polarity | 300 V | 1.25 V @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 20 µA @ 300 V | - | 3A | - | - | Through Hole | B, Axial | -55°C ~ 150°C |
|
1N6700USDIODE SCHOTTKY 20V 5A D-5C Microchip Technology |
2,798 | - |
|
数据表 |
- | SQ-MELF, C | Bulk | Active | Schottky | 20 V | 470 mV @ 5 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200 µA @ 20 V | - | 5A | - | - | Surface Mount | D-5C | -65°C ~ 125°C |