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| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 电压 - 直流反向 (Vr)（最大值） | 电压 - 正向 (Vf)（最大值）@ If | 速度 | 反向恢复时间 (trr) | 电流 - 反向漏电 @ Vr | 电容 @ Vr, F | 电流 - 平均整流（Io） | 等级 | 认证 | 安装类型 | 供应商设备封装 | 工作温度 - 结点 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
JAN1N5194UR/TRSIGNAL OR COMPUTER DIODE Microchip Technology |
3,840 | - |
|
数据表 |
- | DO-213AA | Tape & Reel (TR) | Active | Standard | 70 V | 1 V @ 100 mA | Small Signal =< 200mA (Io), Any Speed | - | 25 nA @ 70 V | - | 200mA | Military | MIL-PRF-19500/118 | Surface Mount | DO-213AA | -55°C ~ 200°C |
|
|
JAN1N5195US/TRDIODE GP 180V 200MA DO213AA Microchip Technology |
9,240 | - |
|
数据表 |
- | DO-213AA | Tape & Reel (TR) | Active | Standard | 180 V | 1 V @ 100 mA | Small Signal =< 200mA (Io), Any Speed | - | 5 µA @ 180 V | - | 200mA | Military | MIL-PRF-19500/118 | Surface Mount | DO-213AA | -65°C ~ 175°C |
|
|
JANHCA1N5819DIODE SCHOTTKY 45V 1A DO41 Microchip Technology |
2,541 | - |
|
数据表 |
- | DO-204AL, DO-41, Axial | Bulk | Active | Schottky | 45 V | 490 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 50 µA @ 45 V | - | 1A | Military | MIL-PRF-19500/586 | Through Hole | DO-41 | -55°C ~ 110°C |
|
|
JANTXV1N6078DIODE GEN PURP 150V 1.3A E-PAK Microchip Technology |
2,620 | - |
|
数据表 |
- | E, Axial | Bulk | Active | Standard | 150 V | 1.76 V @ 18.8 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 1 µA @ 150 V | - | 1.3A | Military | MIL-PRF-19500/503 | Through Hole | E-PAK | -65°C ~ 155°C |
|
|
JANS1N5807DIODE GEN PURP 50V 6A B AXIAL Microchip Technology |
5,222 | - |
|
数据表 |
- | B, Axial | Bulk | Active | Standard | 50 V | 875 mV @ 4 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | - | - | 6A | Military | MIL-PRF-19500/477 | Through Hole | B, Axial | -65°C ~ 175°C |
|
JANS1N5807/TRDIODE GEN PURP 50V 6A B AXIAL Microchip Technology |
3,218 | - |
|
数据表 |
- | B, Axial | Tape & Reel (TR) | Active | Standard | 50 V | 875 mV @ 4 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | - | - | 6A | Military | MIL-PRF-19500/477 | Through Hole | B, Axial | -65°C ~ 175°C |
|
JANTXV1N5804URSDIODE GEN PURP 100V 1A A-MELF Microchip Technology |
4,435 | - |
|
数据表 |
- | SQ-MELF, A | Bulk | Active | Standard | 100 V | 875 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 25 ns | 1 µA @ 100 V | 25pF @ 10V, 1MHz | 1A | Military | MIL-PRF-19500/477 | Surface Mount | A-MELF | -65°C ~ 175°C |
|
UPS140E3/TR7DIODE SCHOTTKY 40V 1A POWERMITE1 Microchip Technology |
39,334 | - |
|
数据表 |
- | DO-216AA | Tape & Reel (TR) | Active | Schottky | 40 V | 450 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 400 µA @ 40 V | 70pF @ 5V, 1MHz | 1A | - | - | Surface Mount | Powermite 1 (DO216-AA) | -55°C ~ 125°C |
|
|
UPS5817E3/TR7DIODE SCHOTTKY 20V 1A POWERMITE1 Microchip Technology |
36,567 | - |
|
数据表 |
- | DO-216AA | Tape & Reel (TR) | Active | Schottky | 20 V | 450 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1 mA @ 20 V | - | 1A | - | - | Surface Mount | Powermite 1 (DO216-AA) | -55°C ~ 150°C |
|
|
JANTXV1N5806URSDIODE GEN PURP 150V 1A A-MELF Microchip Technology |
9,567 | - |
|
数据表 |
- | SQ-MELF, A | Bulk | Active | Standard | 150 V | 875 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 25 ns | 1 µA @ 150 V | 25pF @ 10V, 1MHz | 1A | Military | MIL-PRF-19500/477 | Surface Mount | A-MELF | -65°C ~ 175°C |
