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单个二极管
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 电压 - 直流反向 (Vr)（最大值） | 电压 - 正向 (Vf)（最大值）@ If | 速度 | 反向恢复时间 (trr) | 电流 - 反向漏电 @ Vr | 电容 @ Vr, F | 电流 - 平均整流（Io） | 等级 | 认证 | 安装类型 | 供应商设备封装 | 工作温度 - 结点 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
MSASC100W100HRDIODE SCHOTT 100V 100A THINKEY1 Microchip Technology |
7,359 | - |
|
数据表 |
- | ThinKey™1 | Bulk | Active | Schottky | 100 V | 950 mV @ 80 A | Fast Recovery =< 500ns, > 200mA (Io) | - | - | - | 100A | - | - | Surface Mount | ThinKey™1 | -65°C ~ 175°C |
|
|
MSASC150W60LRECTIFIER Microchip Technology |
3,547 | - |
|
数据表 |
- | - | Bulk | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
MSASC75H45FDIODE SCHOTTKY 45V 75A THINKEY4 Microchip Technology |
9,658 | - |
|
数据表 |
- | ThinKey™4 | Bulk | Active | Schottky | 45 V | 650 mV @ 75 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 7.5 mA @ 45 V | - | 75A | - | - | Surface Mount | ThinKey™4 | -55°C ~ 150°C |
|
|
UES1302/TRDIODE GEN PURP 100V 6A AXIAL Microchip Technology |
8,670 | - |
|
数据表 |
- | Axial | Tape & Reel (TR) | Active | Standard | 100 V | 925 mV @ 6 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 5 µA @ 100 V | - | 6A | - | - | Through Hole | Axial | -55°C ~ 175°C |
|
|
JAN1N5712UB/TRSMALL-SIGNAL SCHOTTKY Microchip Technology |
2,380 | - |
|
数据表 |
- | 3-SMD, No Lead | Tape & Reel (TR) | Active | Schottky | 16 V | 1 V @ 35 mA | Small Signal =< 200mA (Io), Any Speed | - | 150 nA @ 16 V | 2pF @ 0V, 1MHz | 75mA | Military | MIL-PRF-19500/444 | Surface Mount | UB | -65°C ~ 150°C |
|
|
JANKCE1N5804DIODE GEN PURP 100V 1A DIE Microchip Technology |
7,893 | - |
|
数据表 |
- | Die | Tape & Reel (TR) | Active | Standard | 100 V | 875 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 25 ns | 1 µA @ 100 V | 25pF @ 10V, 1MHz | 1A | Military | MIL-PRF-19500/477 | Surface Mount | Die | -65°C ~ 175°C |
|
|
JANKCE1N5802DIODE GEN PURP 50V 1A DIE Microchip Technology |
6,322 | - |
|
数据表 |
- | Die | Tape & Reel (TR) | Active | Standard | 50 V | 875 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 25 ns | 1 µA @ 50 V | 25pF @ 10V, 1MHz | 1A | Military | MIL-PRF-19500/477 | Surface Mount | Die | -65°C ~ 175°C |
|
|
JANS1N6643DIODE GEN PURP 50V 300MA D-5D Microchip Technology |
8,706 | - |
|
数据表 |
- | SQ-MELF, D | Bulk | Active | Standard | 50 V | 1.2 V @ 100 mA | Fast Recovery =< 500ns, > 200mA (Io) | 6 ns | 500 nA @ 150 V | 5pF @ 0V, 1MHz | 300mA | Military | MIL-PRF-19500/578 | Surface Mount | D-5D | -65°C ~ 175°C |
|
|
1N3646DIODE GP 1.75KV 250MA S AXIAL Microchip Technology |
4,061 | - |
|
数据表 |
- | S, Axial | Bulk | Active | Standard | 1750 V | 5 V @ 250 mA | Standard Recovery >500ns, > 200mA (Io) | - | 100 µA @ 1750 V | - | 250mA | - | - | Through Hole | S, Axial | -65°C ~ 175°C |
|
|
1N5711UBDDIODE SCHOTTKY 50V UB Microchip Technology |
9,675 | - |
|
数据表 |
- | 4-SMD, No Lead | Bulk | Active | Schottky | 50 V | 1 V @ 15 mA | Small Signal =< 200mA (Io), Any Speed | - | 200 nA @ 50 V | 2pF @ 0V, 1MHz | - | - | - | Surface Mount | UB | -65°C ~ 150°C |
