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制造商 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点
JANS1N6638US

JANS1N6638US

DIODE GP 125V 300MA B SQ-MELF

Microchip Technology

2,755 -
JANS1N6638US

数据表

- SQ-MELF, B Bulk Active Standard 125 V 1.1 V @ 200 mA Fast Recovery =< 500ns, > 200mA (Io) 4.5 ns - - 300mA Military MIL-PRF-19500/578 Surface Mount B, SQ-MELF -65°C ~ 175°C
JANTXV1N5711UR-1

JANTXV1N5711UR-1

DIODE SCHOTTKY 50V 33MA DO213AA

Microchip Technology

6,576 -
JANTXV1N5711UR-1

数据表

- DO-213AA Bulk Active Schottky 50 V 410 mV @ 1 mA Small Signal =< 200mA (Io), Any Speed - 200 nA @ 50 V 2pF @ 0V, 1MHz 33mA Military MIL-PRF-19500/444 Surface Mount DO-213AA -65°C ~ 150°C
JANS1N6638U/TR

JANS1N6638U/TR

DIODE GEN PURP 125V 300MA D-5B

Microchip Technology

7,921 -
JANS1N6638U/TR

数据表

- SQ-MELF, E Tape & Reel (TR) Active Standard 125 V 1.1 V @ 200 mA Fast Recovery =< 500ns, > 200mA (Io) 4.5 ns 500 nA @ 150 V 2.5pF @ 0V, 1MHz 300mA Military MIL-PRF-19500/578 Surface Mount D-5B -65°C ~ 175°C
JANS1N6638US/TR

JANS1N6638US/TR

DIODE GP 125V 300MA B SQ-MELF

Microchip Technology

9,879 -
JANS1N6638US/TR

数据表

- SQ-MELF, B Tape & Reel (TR) Active Standard 125 V 1.1 V @ 200 mA Fast Recovery =< 500ns, > 200mA (Io) 4.5 ns - - 300mA Military MIL-PRF-19500/578 Surface Mount B, SQ-MELF -65°C ~ 175°C
JANTXV1N5711UR-1/TR

JANTXV1N5711UR-1/TR

DIODE SCHOTTKY 50V 33MA DO213AA

Microchip Technology

7,848 -
JANTXV1N5711UR-1/TR

数据表

- DO-213AA Tape & Reel (TR) Active Schottky 50 V 410 mV @ 1 mA Small Signal =< 200mA (Io), Any Speed - 200 nA @ 50 V 2pF @ 0V, 1MHz 33mA Military MIL-PRF-19500/444 Surface Mount DO-213AA -65°C ~ 150°C
JAN1N5195/TR

JAN1N5195/TR

DIODE GEN PURP 180V 200MA DO35

Microchip Technology

9,367 -
JAN1N5195/TR

数据表

- DO-204AH, DO-35, Axial Tape & Reel (TR) Active Standard 180 V 1 V @ 100 mA Small Signal =< 200mA (Io), Any Speed - 1 µA @ 200 V - 200mA Military MIL-PRF-19500/118 Through Hole DO-204AH (DO-35) -65°C ~ 175°C
JAN1N5195

JAN1N5195

DIODE GEN PURP 180V 200MA DO35

Microchip Technology

3,089 -
JAN1N5195

数据表

- DO-204AH, DO-35, Axial Bulk Active Standard 180 V 1 V @ 100 mA Small Signal =< 200mA (Io), Any Speed - 1 µA @ 200 V - 200mA Military MIL-PRF-19500/118 Through Hole DO-204AH (DO-35) -65°C ~ 175°C
1N6701US

1N6701US

DIODE SCHOTTKY 30V 5A D-5C

Microchip Technology

9,345 -
1N6701US

数据表

- SQ-MELF, C Bulk Active Schottky 30 V 470 mV @ 5 A Fast Recovery =< 500ns, > 200mA (Io) - 200 µA @ 30 V - 5A - - Surface Mount D-5C -65°C ~ 125°C
1N6702US/TR

1N6702US/TR

DIODE SCHOTTKY 40V 5A D-5C

Microchip Technology

3,918 -
1N6702US/TR

数据表

- SQ-MELF, C Tape & Reel (TR) Active Schottky 40 V 470 mV @ 5 A Fast Recovery =< 500ns, > 200mA (Io) - 200 µA @ 40 V - 5A - - Surface Mount D-5C -65°C ~ 125°C
1N6702US

1N6702US

DIODE SCHOTTKY 40V 5A D-5C

Microchip Technology

7,814 -
1N6702US

数据表

- SQ-MELF, C Bulk Active Schottky 40 V 470 mV @ 5 A Fast Recovery =< 500ns, > 200mA (Io) - 200 µA @ 40 V - 5A - - Surface Mount D-5C -65°C ~ 125°C
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