订单满￥1000免运费
24小时咨询热线
0755 83957878
单个二极管
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 电压 - 直流反向 (Vr)（最大值） | 电压 - 正向 (Vf)（最大值）@ If | 速度 | 反向恢复时间 (trr) | 电流 - 反向漏电 @ Vr | 电容 @ Vr, F | 电流 - 平均整流（Io） | 等级 | 认证 | 安装类型 | 供应商设备封装 | 工作温度 - 结点 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
JAN1N6763DIODE GEN PURP 100V 12A TO254 Microchip Technology |
6,317 | - |
|
数据表 |
- | TO-254-3, TO-254AA | Bulk | Active | Standard | 100 V | 1.05 V @ 12 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 10 µA @ 200 V | 300pF @ 5V, 1MHz | 12A | Military | MIL-PRF-19500/642 | Through Hole | TO-254 | - |
|
LSM115JE3/TR13DIODE SCHOTTKY 15V 1A DO214BA Microchip Technology |
54,684 | - |
|
数据表 |
- | DO-214BA | Tape & Reel (TR) | Active | Schottky | 15 V | 220 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 10 mA @ 15 V | - | 1A | - | - | Surface Mount | DO-214BA | -55°C ~ 100°C |
|
|
JANS1N6864DIODE SCHOTTKY 80V 3A B AXIAL Microchip Technology |
7,305 | - |
|
数据表 |
- | B, Axial | Bulk | Active | Schottky | 80 V | 700 mV @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 18 mA @ 80 V | - | 3A | Military | MIL-PRF-19500/620 | Through Hole | B, Axial | -65°C ~ 125°C |
|
|
JANS1N6864USDIODE SCHOTTKY 80V 3A B SQ-MELF Microchip Technology |
7,576 | - |
|
数据表 |
- | SQ-MELF, B | Bulk | Active | Schottky | 80 V | 700 mV @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 150 µA @ 80 V | - | 3A | Military | MIL-PRF-19500/620 | Surface Mount | B, SQ-MELF | -65°C ~ 125°C |
|
|
JANTX1N3170DIODE GP 600V 300A DO205AB DO9 Microchip Technology |
5,966 | - |
|
数据表 |
- | DO-205AB, DO-9, Stud | Bulk | Active | Standard | 600 V | 1.55 V @ 940 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 mA @ 700 V | - | 300A | Military | MIL-PRF-19500/211 | Stud Mount | DO-205AB (DO-9) | -65°C ~ 200°C |
|
|
JANTX1N6306DIODE GEN PURP 150V 70A DO5 Microchip Technology |
5,102 | - |
|
数据表 |
- | DO-203AB, DO-5, Stud | Bulk | Active | Standard | 150 V | 1.18 V @ 150 A | Fast Recovery =< 500ns, > 200mA (Io) | 60 ns | 25 µA @ 150 V | - | 70A | Military | MIL-PRF-19500/550 | Stud Mount | DO-5 (DO-203AB) | -65°C ~ 175°C |
|
|
JANTX1N6765DIODE GEN PURP 200V 12A TO254 Microchip Technology |
5,613 | - |
|
数据表 |
- | TO-254-3, TO-254AA | Bulk | Active | Standard | 200 V | 1.05 V @ 12 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 10 µA @ 200 V | 300pF @ 5V, 1MHz | 12A | Military | MIL-PRF-19500/642 | Through Hole | TO-254 | - |
|
|
JANTX1N6864USDIODE SCHOTTKY 80V 3A B SQ-MELF Microchip Technology |
2,758 | - |
|
数据表 |
- | SQ-MELF, B | Bulk | Active | Schottky | 80 V | 700 mV @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 150 µA @ 80 V | - | 3A | Military | MIL-PRF-19500/620 | Surface Mount | B, SQ-MELF | -65°C ~ 125°C |
|
|
JANTXV1N645UR-1DIODE GP 225V 400MA DO213AA Microchip Technology |
2,952 | - |
|
数据表 |
- | DO-213AA | Bulk | Active | Standard | 225 V | 1 V @ 400 mA | Standard Recovery >500ns, > 200mA (Io) | - | - | - | 400mA | Military | MIL-PRF-19500/240 | Surface Mount | DO-213AA | -65°C ~ 175°C |
|
|
MSARS20E060GDIODE GEN PURP 600V 20A G-BODY Microchip Technology |
2,417 | - |
|
数据表 |
- | DO-217AA | Bulk | Active | Standard | 600 V | 1.4 V @ 10 A | Fast Recovery =< 500ns, > 200mA (Io) | 45 ns | 5 µA @ 600 V | - | 20A | - | - | Surface Mount | G-Body (DO-217AA) | -65°C ~ 175°C |
