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单个二极管
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 电压 - 直流反向 (Vr)（最大值） | 电压 - 正向 (Vf)（最大值）@ If | 速度 | 反向恢复时间 (trr) | 电流 - 反向漏电 @ Vr | 电容 @ Vr, F | 电流 - 平均整流（Io） | 等级 | 认证 | 安装类型 | 供应商设备封装 | 工作温度 - 结点 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
JANTXV1N6631/TRDIODE GEN PURP 1.1KV 1.4A E-PAK Microchip Technology |
5,239 | - |
|
数据表 |
- | E, Axial | Tape & Reel (TR) | Active | Standard | 1100 V | 1.6 V @ 1.4 A | Fast Recovery =< 500ns, > 200mA (Io) | 60 ns | 4 µA @ 1100 V | 40pF @ 10V, 1MHz | 1.4A | Military | MIL-PRF-19500/590 | Through Hole | E-PAK | -65°C ~ 150°C |
|
|
JANTXV1N6630/TRDIODE GEN PURP 900V 1.4A E-PAK Microchip Technology |
7,266 | - |
|
数据表 |
- | E, Axial | Tape & Reel (TR) | Active | Standard | 900 V | 1.4 V @ 1.4 A | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 2 µA @ 900 V | - | 1.4A | Military | MIL-PRF-19500/590 | Through Hole | E-PAK | -65°C ~ 150°C |
|
JANTXV1N5802URSDIODE GEN PURP 50V 1A A-MELF Microchip Technology |
5,269 | - |
|
数据表 |
- | SQ-MELF, A | Bulk | Active | Standard | 50 V | 875 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 25 ns | 1 µA @ 50 V | 25pF @ 10V, 1MHz | 1A | Military | MIL-PRF-19500/477 | Surface Mount | A-MELF | -65°C ~ 175°C |
|
JANTXV1N6642UBDIODE GEN PURP 75V 300MA UB Microchip Technology |
8,505 | - |
|
数据表 |
- | 3-SMD, No Lead | Bulk | Discontinued at Digi-Key | Standard | 75 V | 1.2 V @ 100 mA | Fast Recovery =< 500ns, > 200mA (Io) | 20 ns | 500 nA @ 75 V | - | 300mA | Military | MIL-PRF-19500/578 | Surface Mount | UB | -65°C ~ 175°C |
|
|
UTX4110/TRDIODE GP 100V 4A B AXIAL Microchip Technology |
8,721 | - |
|
数据表 |
- | B, Axial | Tape & Reel (TR) | Active | Standard | 100 V | 1 V @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | 100 ns | 5 µA @ 100 V | - | 4A | - | - | Through Hole | B, Axial | -195°C ~ 175°C |
|
|
JANTXV1N6631DIODE GEN PURP 1.1KV 1.4A E-PAK Microchip Technology |
8,088 | - |
|
数据表 |
- | E, Axial | Bulk | Discontinued at Digi-Key | Standard | 1100 V | 1.6 V @ 1.4 A | Fast Recovery =< 500ns, > 200mA (Io) | 60 ns | 4 µA @ 1100 V | 40pF @ 10V, 1MHz | 1.4A | Military | MIL-PRF-19500/590 | Through Hole | E-PAK | -65°C ~ 150°C |
|
|
JAN1N5194URDIODE GEN PURP 70V 200MA DO213AA Microchip Technology |
4,277 | - |
|
数据表 |
- | DO-213AA | Bulk | Active | Standard | 70 V | 1 V @ 100 mA | Small Signal =< 200mA (Io), Any Speed | - | - | - | 200mA | Military | MIL-PRF-19500/118 | Surface Mount | DO-213AA | -65°C ~ 175°C |
|
|
JAN1N5195URDIODE GP 180V 200MA DO213AA Microchip Technology |
3,121 | - |
|
数据表 |
- | DO-213AA | Bulk | Active | Standard | 180 V | 1 V @ 100 mA | Small Signal =< 200mA (Io), Any Speed | - | - | - | 200mA | Military | MIL-PRF-19500/118 | Surface Mount | DO-213AA | -65°C ~ 175°C |
|
1N5622DIODE GEN PURP 1KV 1A AXIAL Microchip Technology |
8,521 | - |
|
数据表 |
- | A, Axial | Bulk | Active | Standard | 1000 V | 1.3 V @ 3 A | Standard Recovery >500ns, > 200mA (Io) | 2 µs | 500 nA @ 1000 V | - | 1A | - | - | Through Hole | A, Axial | -65°C ~ 200°C |
|
|
1N6622USDIODE GEN PURP 660V 1.2A A-MELF Microchip Technology |
5,542 | - |
|
数据表 |
- | SQ-MELF, A | Bulk | Active | Standard | 660 V | 1.4 V @ 1.2 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 500 nA @ 660 V | 10pF @ 10V, 1MHz | 1.2A | - | - | Surface Mount | A-MELF | -65°C ~ 150°C |
