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制造商 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点
UES1002SM-1

UES1002SM-1

DIODE GEN PURP 100V 2A A SQ-MELF

Microchip Technology

6,366 -
UES1002SM-1

数据表

- SQ-MELF, A Bulk Active Standard 100 V 975 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 25 ns 2 µA @ 100 V - 2A - - Surface Mount A, SQ-MELF -55°C ~ 175°C
UES1001SM

UES1001SM

DIODE GEN PURP 1A A SQ-MELF

Microchip Technology

2,433 -
UES1001SM

数据表

- SQ-MELF, A Bulk Active Standard - 975 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 25 ns 2 µA @ 50 V - 1A - - Surface Mount A, SQ-MELF -55°C ~ 175°C
UES1302E3

UES1302E3

DIODE GEN PURP 100V 6A B AXIAL

Microchip Technology

6,819 -
UES1302E3

数据表

- B, Axial Bulk Active Standard 100 V 925 mV @ 6 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 5 µA @ 100 V - 6A - - Through Hole B, Axial 175°C
UES1301/TR

UES1301/TR

DIODE GEN PURP 50V 6A B AXIAL

Microchip Technology

7,137 -
UES1301/TR

数据表

- B, Axial Tape & Reel (TR) Active Standard 50 V 925 mV @ 6 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns - - 6A - - Through Hole B, Axial -55°C ~ 175°C
UES1003SM/TR

UES1003SM/TR

RECTIFIER UFR,FRR

Microchip Technology

5,229 -
UES1003SM/TR

数据表

- - Tape & Reel (TR) Active - - - - - - - - - - - - -
UES1002SM/TR

UES1002SM/TR

DIODE GEN PURP A AXIAL

Microchip Technology

2,734 -
UES1002SM/TR

数据表

- A, Axial Tape & Reel (TR) Active Standard - 975 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 25 ns - - - - - Through Hole A, Axial -
UES1101SME3

UES1101SME3

DIODE GEN PURP 50V 2.5A A AXIAL

Microchip Technology

3,983 -
UES1101SME3

数据表

- Axial Bulk Active Standard 50 V 975 mV @ 2 A Fast Recovery =< 500ns, > 200mA (Io) 25 ns 2 µA @ 50 V - 2.5A - - Through Hole A, Axial 175°C
UES1002SM-1/TR

UES1002SM-1/TR

DIODE GEN PURP 100V 2A A SQ-MELF

Microchip Technology

9,712 -
UES1002SM-1/TR

数据表

- SQ-MELF, A Tape & Reel (TR) Active Standard 100 V 975 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 25 ns 2 µA @ 100 V - 2A - - Surface Mount A, SQ-MELF -55°C ~ 175°C
UES1001SM/TR

UES1001SM/TR

DIODE GEN PURP 1A A SQ-MELF

Microchip Technology

2,615 -
UES1001SM/TR

数据表

- SQ-MELF, A Tape & Reel (TR) Active Standard - 975 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 25 ns 2 µA @ 50 V - 1A - - Surface Mount A, SQ-MELF -55°C ~ 175°C
UES1003SM-1/TR

UES1003SM-1/TR

DIODE GEN PURP 1A A SQ-MELF

Microchip Technology

5,937 -
UES1003SM-1/TR

数据表

- SQ-MELF, A Tape & Reel (TR) Active Standard - 975 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 25 ns 2 µA @ 150 V - 1A - - Surface Mount A, SQ-MELF -55°C ~ 175°C
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