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制造商 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点
JANTXV1N6626US/TR

JANTXV1N6626US/TR

DIODE GEN PURP 220V 1.75A D-5B

Microchip Technology

4,185 -
JANTXV1N6626US/TR

数据表

- SQ-MELF, E Tape & Reel (TR) Active Standard 220 V 1.35 V @ 2 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 2 µA @ 220 V 40pF @ 10V, 1MHz 1.75A Military MIL-PRF-19500/590 Surface Mount D-5B -65°C ~ 150°C
JANTXV1N6626U/TR

JANTXV1N6626U/TR

DIODE GP 220V 1.75A SQ-MELF

Microchip Technology

6,027 -
JANTXV1N6626U/TR

数据表

- SQ-MELF, B Tape & Reel (TR) Active Standard 220 V 1.35 V @ 2 A Fast Recovery =< 500ns, > 200mA (Io) 45 ns 2 µA @ 220 V 40pF @ 10V, 1MHz 1.75A Military MIL-PRF-19500/590 Surface Mount B, SQ-MELF -65°C ~ 150°C
UES1101SM/TR

UES1101SM/TR

DIODE GEN PURP 50V 2A A SQ-MELF

Microchip Technology

7,583 -
UES1101SM/TR

数据表

- SQ-MELF, A Tape & Reel (TR) Active Standard 50 V 975 mV @ 2 A Fast Recovery =< 500ns, > 200mA (Io) 25 ns - - 2A - - Surface Mount A, SQ-MELF -
JANS1N5811/TR

JANS1N5811/TR

DIODE GEN PURP 150V 6A B AXIAL

Microchip Technology

2,579 -
JANS1N5811/TR

数据表

- B, Axial Tape & Reel (TR) Active Standard 150 V 875 mV @ 4 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns - - 6A Military MIL-PRF-19500/477 Through Hole B, Axial -65°C ~ 175°C
UES1306E3

UES1306E3

DIODE GEN PURP 400V 3A B AXIAL

Microchip Technology

9,650 -
UES1306E3

数据表

- B, Axial Bulk Active Standard 400 V 1.25 V @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 20 µA @ 400 V - 3A - - Through Hole B, Axial -55°C ~ 150°C
JANS1N5811

JANS1N5811

DIODE GEN PURP 150V 6A B AXIAL

Microchip Technology

9,618 -
JANS1N5811

数据表

- B, Axial Bulk Active Standard 150 V 875 mV @ 4 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns - - 6A Military MIL-PRF-19500/477 Through Hole B, Axial -65°C ~ 175°C
JANTXV1N4148UB

JANTXV1N4148UB

DIODE GEN PURP 75V 200MA UB

Microchip Technology

2,548 -
JANTXV1N4148UB

数据表

- 3-SMD, No Lead Bulk Discontinued at Digi-Key Standard 75 V 1.2 V @ 100 mA Small Signal =< 200mA (Io), Any Speed 20 ns 500 nA @ 75 V 4pF @ 0V, 1MHz 200mA Military MIL-PRF-19500/116 Surface Mount UB -65°C ~ 200°C
JANTXV1N5807URS

JANTXV1N5807URS

DIODE GEN PURP 50V 3A B SQ-MELF

Microchip Technology

7,211 -
JANTXV1N5807URS

数据表

- SQ-MELF, B Bulk Active Standard 50 V 875 mV @ 4 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 5 µA @ 50 V 60pF @ 10V, 1MHz 3A Military MIL-PRF-19500/477 Surface Mount B, SQ-MELF -65°C ~ 175°C
JANTXV1N5809URS

JANTXV1N5809URS

DIODE GEN PURP 100V 3A B SQ-MELF

Microchip Technology

4,096 -
JANTXV1N5809URS

数据表

- SQ-MELF, B Bulk Active Standard 100 V 875 mV @ 4 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 5 µA @ 100 V 60pF @ 10V, 1MHz 3A Military MIL-PRF-19500/477 Surface Mount B, SQ-MELF -65°C ~ 175°C
JANTXV1N5811URS

JANTXV1N5811URS

DIODE GEN PURP 150V 3A B SQ-MELF

Microchip Technology

4,849 -
JANTXV1N5811URS

数据表

- SQ-MELF, B Bulk Active Standard 150 V 875 mV @ 4 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 5 µA @ 150 V 60pF @ 10V, 1MHz 3A Military MIL-PRF-19500/477 Surface Mount B, SQ-MELF -65°C ~ 175°C
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