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单个二极管

制造商 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点
1N6702/TR

1N6702/TR

DIODE SCHOTTKY REV 40V 5A AXIAL

Microchip Technology

2,483 -
1N6702/TR

数据表

- Axial Tape & Reel (TR) Active Schottky, Reverse Polarity 40 V 470 mV @ 5 A Fast Recovery =< 500ns, > 200mA (Io) - 200 µA @ 40 V - 5A - - Through Hole Axial -65°C ~ 125°C
JANTX1N6628US

JANTX1N6628US

DIODE GEN PURP 660V 1.75A D-5B

Microchip Technology

9,101 -
JANTX1N6628US

数据表

- SQ-MELF, E Bulk Active Standard 660 V 1.35 V @ 2 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 2 µA @ 660 V 40pF @ 10V, 1MHz 1.75A Military MIL-PRF-19500/590 Surface Mount D-5B -65°C ~ 150°C
JANTX1N6628U

JANTX1N6628U

DIODE GEN PURP 600V 1.75A D-5B

Microchip Technology

4,058 -
JANTX1N6628U

数据表

- SQ-MELF, E Bulk Active Standard 600 V 1.35 V @ 2 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 2 µA @ 600 V - 1.75A Military MIL-PRF-19500/590 Surface Mount D-5B -65°C ~ 150°C
R3520

R3520

RECTIFIER

Microchip Technology

6,985 -
R3520

数据表

R35 DO-203AB, DO-5, Stud Bulk Active Standard, Reverse Polarity 200 V 1.25 V @ 200 A Standard Recovery >500ns, > 200mA (Io) - 25 µA @ 200 V - 70A - - Stud Mount DO-203AB (DO-5) -65°C ~ 200°C
JANTXV1N5819UR-1/TR

JANTXV1N5819UR-1/TR

DIODE SCHOTTKY 45V 1A DO213AB

Microchip Technology

8,815 -
JANTXV1N5819UR-1/TR

数据表

- DO-213AB, MELF (Glass) Tape & Reel (TR) Active Schottky 45 V 490 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) - 50 µA @ 45 V 70pF @ 5V, 1MHz 1A Military MIL-PRF-19500/586 Surface Mount DO-213AB (MELF, LL41) -65°C ~ 125°C
JANTX1N6628US/TR

JANTX1N6628US/TR

DIODE GEN PURP 660V 1.75A D-5B

Microchip Technology

3,814 -
JANTX1N6628US/TR

数据表

- SQ-MELF, E Tape & Reel (TR) Active Standard 660 V 1.35 V @ 2 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 2 µA @ 660 V 40pF @ 10V, 1MHz 1.75A Military MIL-PRF-19500/590 Surface Mount D-5B -65°C ~ 150°C
JANTX1N6628U/TR

JANTX1N6628U/TR

DIODE GEN PURP 600V 1.75A D-5B

Microchip Technology

6,626 -
JANTX1N6628U/TR

数据表

- SQ-MELF, E Tape & Reel (TR) Active Standard 600 V 1.35 V @ 2 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 2 µA @ 600 V - 1.75A Military MIL-PRF-19500/590 Surface Mount D-5B -65°C ~ 150°C
UES1002SM

UES1002SM

DIODE GEN PURP A AXIAL

Microchip Technology

4,567 -
UES1002SM

数据表

- A, Axial Bulk Active Standard - 975 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 25 ns - - - - - Through Hole A, Axial -
UES1003SM

UES1003SM

RECTIFIER

Microchip Technology

9,766 -
UES1003SM

数据表

- - Bulk Active - - - - - - - - - - - - -
UES1003SM-1

UES1003SM-1

DIODE GEN PURP 1A A SQ-MELF

Microchip Technology

9,133 -
UES1003SM-1

数据表

- SQ-MELF, A Bulk Active Standard - 975 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 25 ns 2 µA @ 150 V - 1A - - Surface Mount A, SQ-MELF -55°C ~ 175°C
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