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制造商 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点
JAN1N4148UB/TR

JAN1N4148UB/TR

SIGNAL OR COMPUTER DIODE

Microchip Technology

7,501 -
JAN1N4148UB/TR

数据表

- 3-SMD, No Lead Tape & Reel (TR) Active Standard 75 V 1.2 V @ 100 mA Small Signal =< 200mA (Io), Any Speed 20 ns 500 nA @ 75 V 4pF @ 0V, 1MHz 200mA Military MIL-PRF-19500/116 Surface Mount UB -65°C ~ 200°C
JANTXV1N5420US

JANTXV1N5420US

DIODE GEN PURP 600V 3A D-5B

Microchip Technology

9,031 -
JANTXV1N5420US

数据表

- SQ-MELF, E Bulk Active Standard 600 V 1.5 V @ 9 A Fast Recovery =< 500ns, > 200mA (Io) 400 ns 1 µA @ 600 V - 3A Military MIL-PRF-19500/411 Surface Mount D-5B -65°C ~ 175°C
JANTX1N6630US/TR

JANTX1N6630US/TR

DIODE GEN PURP 900V 1.4A D-5B

Microchip Technology

4,979 -
JANTX1N6630US/TR

数据表

- SQ-MELF, E Tape & Reel (TR) Active Standard 900 V 1.4 V @ 1.4 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 2 µA @ 900 V - 1.4A Military MIL-PRF-19500/590 Surface Mount D-5B -65°C ~ 150°C
1N6700

1N6700

DIODE SCHOTTKY

Microchip Technology

7,327 -
1N6700

数据表

* - Bulk Active - - - - - - - - - - - - -
JANTXV1N5420US/TR

JANTXV1N5420US/TR

DIODE GEN PURP 600V 3A D-5B

Microchip Technology

2,504 -
JANTXV1N5420US/TR

数据表

- SQ-MELF, E Tape & Reel (TR) Active Standard 600 V 1.5 V @ 9 A Fast Recovery =< 500ns, > 200mA (Io) 400 ns 1 µA @ 600 V - 3A Military MIL-PRF-19500/411 Surface Mount D-5B -65°C ~ 175°C
JANTXV1N6076

JANTXV1N6076

DIODE GEN PURP 50V 1.3A E-PAK

Microchip Technology

7,429 -
JANTXV1N6076

数据表

- E, Axial Bulk Active Standard 50 V 1.76 V @ 18.8 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 1 µA @ 50 V - 1.3A Military MIL-PRF-19500/503 Through Hole E-PAK -65°C ~ 155°C
JANTXV1N6077

JANTXV1N6077

DIODE GEN PURP 100V 1.3A E-PAK

Microchip Technology

3,633 -
JANTXV1N6077

数据表

- E, Axial Bulk Active Standard 100 V 1.76 V @ 18.8 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 1 µA @ 100 V - 1.3A Military MIL-PRF-19500/503 Through Hole E-PAK -65°C ~ 155°C
JANTX1N4148UB

JANTX1N4148UB

DIODE GEN PURP 75V 200MA UB

Microchip Technology

9,879 -
JANTX1N4148UB

数据表

- 3-SMD, No Lead Bulk Active Standard 75 V 1.2 V @ 100 mA Small Signal =< 200mA (Io), Any Speed 20 ns 500 nA @ 75 V 4pF @ 0V, 1MHz 200mA Military MIL-PRF-19500/116 Surface Mount UB -65°C ~ 200°C
JAN1N4148UB2

JAN1N4148UB2

DIODE GEN PURP 75V 200MA UB2

Microchip Technology

4,498 -
JAN1N4148UB2

数据表

- 2-SMD, No Lead Bulk Active Standard 75 V 1.2 V @ 100 mA Small Signal =< 200mA (Io), Any Speed 20 ns 500 nA @ 75 V 4pF @ 0V, 1MHz 200mA Military MIL-PRF-19500/116 Surface Mount UB2 -65°C ~ 200°C
JAN1N4148UB2R

JAN1N4148UB2R

DIODE GEN PURP 75V 200MA UB2R

Microchip Technology

6,851 -
JAN1N4148UB2R

数据表

- 2-SMD, No Lead Bulk Active Standard, Reverse Polarity 75 V 1.2 V @ 100 mA Small Signal =< 200mA (Io), Any Speed 20 ns 500 nA @ 75 V 4pF @ 0V, 1MHz 200mA Military MIL-PRF-19500/116 Surface Mount UB2R -65°C ~ 200°C
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