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单个二极管

制造商 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点
UES1105

UES1105

DIODE GEN PURP 300V 2A A AXIAL

Microchip Technology

7,490 -
UES1105

数据表

- A, Axial Bulk Active Standard 300 V 1.25 V @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns - - 2A - - Through Hole A, Axial -55°C ~ 150°C
UES1301

UES1301

DIODE GEN PURP 50V 6A B AXIAL

Microchip Technology

5,239 -
UES1301

数据表

- B, Axial Bulk Active Standard 50 V 925 mV @ 6 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns - - 6A - - Through Hole B, Axial -55°C ~ 175°C
UES1101SME3/TR

UES1101SME3/TR

DIODE GEN PURP 50V 2.5A A AXIAL

Microchip Technology

9,724 -
UES1101SME3/TR

数据表

- Axial Tape & Reel (TR) Active Standard 50 V 975 mV @ 2 A Fast Recovery =< 500ns, > 200mA (Io) 25 ns 2 µA @ 50 V - 2.5A - - Through Hole A, Axial 175°C
UES1302E3/TR

UES1302E3/TR

DIODE GEN PURP 100V 6A B AXIAL

Microchip Technology

6,904 -
UES1302E3/TR

数据表

- B, Axial Tape & Reel (TR) Active Standard 100 V 925 mV @ 6 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 5 µA @ 100 V - 6A - - Through Hole B, Axial 175°C
UES1105/TR

UES1105/TR

DIODE GEN PURP 300V 2A A AXIAL

Microchip Technology

3,350 -
UES1105/TR

数据表

- A, Axial Tape & Reel (TR) Active Standard 300 V 1.25 V @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns - - 2A - - Through Hole A, Axial -55°C ~ 150°C
JANTX1N4148UB2

JANTX1N4148UB2

DIODE GEN PURP 75V 200MA UB2

Microchip Technology

6,135 -
JANTX1N4148UB2

数据表

- 2-SMD, No Lead Bulk Active Standard 75 V 1.2 V @ 100 mA Small Signal =< 200mA (Io), Any Speed 20 ns 500 nA @ 75 V 4pF @ 0V, 1MHz 200mA Military MIL-PRF-19500/116 Surface Mount UB2 -65°C ~ 200°C
JANTX1N4148UB2/TR

JANTX1N4148UB2/TR

SIGNAL OR COMPUTER DIODE

Microchip Technology

2,729 -
JANTX1N4148UB2/TR

数据表

- 2-SMD, No Lead Tape & Reel (TR) Active Standard 75 V 1.2 V @ 100 mA Small Signal =< 200mA (Io), Any Speed 20 ns 500 nA @ 75 V 4pF @ 0V, 1MHz 200mA Military MIL-PRF-19500/116 Surface Mount UB2 -65°C ~ 200°C
UES1101SM

UES1101SM

DIODE GEN PURP 50V 2A A SQ-MELF

Microchip Technology

2,087 -
UES1101SM

数据表

- SQ-MELF, A Bulk Active Standard 50 V 975 mV @ 2 A Fast Recovery =< 500ns, > 200mA (Io) 25 ns - - 2A - - Surface Mount A, SQ-MELF -
JANTXV1N6626US

JANTXV1N6626US

DIODE GEN PURP 220V 1.75A D-5B

Microchip Technology

9,073 -
JANTXV1N6626US

数据表

- SQ-MELF, E Bulk Discontinued at Digi-Key Standard 220 V 1.35 V @ 2 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 2 µA @ 220 V 40pF @ 10V, 1MHz 1.75A Military MIL-PRF-19500/590 Surface Mount D-5B -65°C ~ 150°C
MNS1N6627US

MNS1N6627US

DIODE GP 440V 1.75A SQ-MELF B

Microchip Technology

5,103 -
MNS1N6627US

数据表

- SQ-MELF, B Bulk Active Standard 440 V 1.35 V @ 2 A Fast Recovery =< 500ns, > 200mA (Io) 45 ns 2 µA @ 440 V 40pF @ 10V, 1MHz 1.75A Military MIL-PRF-19500/590 Surface Mount B, SQ-MELF -65°C ~ 150°C
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