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单个二极管
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 电压 - 直流反向 (Vr)（最大值） | 电压 - 正向 (Vf)（最大值）@ If | 速度 | 反向恢复时间 (trr) | 电流 - 反向漏电 @ Vr | 电容 @ Vr, F | 电流 - 平均整流（Io） | 等级 | 认证 | 安装类型 | 供应商设备封装 | 工作温度 - 结点 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
JAN1N5711UB/TRSMALL-SIGNAL SCHOTTKY Microchip Technology |
9,641 | - |
|
数据表 |
- | 3-SMD, No Lead | Tape & Reel (TR) | Active | Schottky | 50 V | 1 V @ 15 mA | Small Signal =< 200mA (Io), Any Speed | - | 200 nA @ 50 V | 2pF @ 0V, 1MHz | 33mA | Military | MIL-PRF-19500/444 | Surface Mount | UB | -65°C ~ 150°C |
|
|
JANTXV1N6624DIODE GEN PURP 990V 1A A-PAK Microchip Technology |
5,647 | - |
|
数据表 |
- | A, Axial | Bulk | Active | Standard | 990 V | 1.55 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 500 nA @ 990 V | - | 1A | Military | MIL-PRF-19500/585 | Through Hole | A, Axial | -65°C ~ 150°C |
|
JANTX1N6622/TRDIODE GEN PURP 660V 2A Microchip Technology |
2,538 | - |
|
数据表 |
- | A, Axial | Tape & Reel (TR) | Active | Standard | 660 V | 1.4 V @ 1.2 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 500 nA @ 660 V | 10pF @ 10V, 1MHz | 2A | Military | MIL-PRF-19500/585 | Through Hole | A, Axial | -65°C ~ 150°C |
|
JANTX1N6622DIODE GEN PURP 660V 2A AXIAL Microchip Technology |
6,002 | - |
|
数据表 |
- | A, Axial | Bulk | Active | Standard | 660 V | 1.4 V @ 1.2 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 500 nA @ 660 V | 10pF @ 10V, 1MHz | 2A | Military | MIL-PRF-19500/585 | Through Hole | A, Axial | -65°C ~ 150°C |
|
|
JANTXV1N6624/TRDIODE GEN PURP 990V 1A A-PAK Microchip Technology |
2,640 | - |
|
数据表 |
- | A, Axial | Tape & Reel (TR) | Active | Standard | 990 V | 1.55 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 500 nA @ 990 V | - | 1A | Military | MIL-PRF-19500/585 | Through Hole | A, Axial | -65°C ~ 150°C |
|
|
UES1002/TRDIODE GEN PURP 100V 1A Microchip Technology |
9,195 | - |
|
数据表 |
- | A, Axial | Tape & Reel (TR) | Active | Standard | 100 V | 975 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 25 ns | 2 µA @ 100 V | - | 1A | - | - | Through Hole | A, Axial | -55°C ~ 175°C |
|
|
JANTX1N5616DIODE GEN PURP 400V 1A AXIAL Microchip Technology |
5,526 | - |
|
数据表 |
- | A, Axial | Bulk | Active | Standard | 400 V | 1.3 V @ 3 A | Standard Recovery >500ns, > 200mA (Io) | 2 µs | 500 nA @ 400 V | - | 1A | Military | MIL-PRF-19500/427 | Through Hole | A, Axial | -65°C ~ 200°C |
|
JANTX1N5619DIODE GEN PURP 600V 1A AXIAL Microchip Technology |
8,229 | - |
|
数据表 |
- | A, Axial | Bulk | Active | Standard | 600 V | 1.6 V @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | 250 ns | 500 nA @ 600 V | - | 1A | Military | MIL-PRF-19500/429 | Through Hole | A, Axial | -65°C ~ 175°C |
|
|
JANTX1N5807URSDIODE GEN PURP 50V 3A B SQ-MELF Microchip Technology |
9,602 | - |
|
数据表 |
- | SQ-MELF, B | Bulk | Active | Standard | 50 V | 875 mV @ 4 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 5 µA @ 50 V | 60pF @ 10V, 1MHz | 3A | Military | MIL-PRF-19500/477 | Surface Mount | B, SQ-MELF | - |
|
|
JANTX1N5809URSDIODE GEN PURP 100V 3A B SQ-MELF Microchip Technology |
4,568 | - |
|
数据表 |
- | SQ-MELF, B | Bulk | Active | Standard | 100 V | 875 mV @ 4 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 5 µA @ 100 V | 60pF @ 10V, 1MHz | 3A | Military | MIL-PRF-19500/477 | Surface Mount | B, SQ-MELF | -65°C ~ 175°C |
