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制造商 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点
JANTX1N5811URS

JANTX1N5811URS

DIODE GEN PURP 150V 3A B SQ-MELF

Microchip Technology

8,033 -
JANTX1N5811URS

数据表

- SQ-MELF, B Bulk Active Standard 150 V 875 mV @ 4 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 5 µA @ 150 V 60pF @ 10V, 1MHz 3A Military MIL-PRF-19500/477 Surface Mount B, SQ-MELF -65°C ~ 175°C
1N5554US

1N5554US

DIODE GEN PURP 1KV 3A B SQ-MELF

Microchip Technology

8 -
1N5554US

数据表

- SQ-MELF, B Bulk Active Standard 1000 V 1.2 V @ 9 A Standard Recovery >500ns, > 200mA (Io) 2 µs 1 µA @ 1000 V - 3A - - Surface Mount B, SQ-MELF -65°C ~ 175°C
UES1302

UES1302

DIODE GEN PURP 100V 6A AXIAL

Microchip Technology

9,703 -
UES1302

数据表

- Axial Bulk Active Standard 100 V 925 mV @ 6 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 5 µA @ 100 V - 6A - - Through Hole Axial -55°C ~ 175°C
JANTX1N5811URS/TR

JANTX1N5811URS/TR

DIODE GP 150V 3A SQ-MELF B

Microchip Technology

8,605 -
JANTX1N5811URS/TR

数据表

- SQ-MELF, B Tape & Reel (TR) Active Standard 150 V 875 mV @ 4 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 5 µA @ 150 V 60pF @ 10V, 1MHz 3A Military MIL-PRF-19500/477 Surface Mount B, SQ-MELF -65°C ~ 175°C
JANTX1N5809URS/TR

JANTX1N5809URS/TR

UFR,FRR

Microchip Technology

5,853 -
JANTX1N5809URS/TR

数据表

- SQ-MELF, B Tape & Reel (TR) Active Standard 100 V 875 mV @ 4 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 5 µA @ 100 V 60pF @ 10V, 1MHz 3A Military MIL-PRF-19500/477 Surface Mount B, SQ-MELF -65°C ~ 175°C
JANTX1N5807URS/TR

JANTX1N5807URS/TR

UFR,FRR

Microchip Technology

9,448 -
JANTX1N5807URS/TR

数据表

- SQ-MELF, B Tape & Reel (TR) Active Standard 50 V 875 mV @ 4 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 5 µA @ 50 V 60pF @ 10V, 1MHz 3A Military MIL-PRF-19500/477 Surface Mount B, SQ-MELF -65°C ~ 175°C
JAN1N6642UB

JAN1N6642UB

DIODE GEN PURP 75V 300MA UB

Microchip Technology

8,904 -
JAN1N6642UB

数据表

- 3-SMD, No Lead Bulk Active Standard 75 V 1.2 V @ 100 mA Fast Recovery =< 500ns, > 200mA (Io) 5 ns 500 nA @ 75 V 5pF @ 0V, 1MHz 300mA Military MIL-PRF-19500/578 Surface Mount UB -65°C ~ 175°C
JANS1N5806US/TR

JANS1N5806US/TR

DIODE GEN PURP 150V 1A D-5A

Microchip Technology

2,723 -
JANS1N5806US/TR

数据表

- SQ-MELF, A Tape & Reel (TR) Active Standard 150 V 875 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 25 ns 1 µA @ 150 V 25pF @ 10V, 1MHz 1A Military MIL-PRF-19500/477 Surface Mount D-5A -65°C ~ 175°C
JANTXV1N6625US

JANTXV1N6625US

DIODE GEN PURP 1.1KV 1A D-5A

Microchip Technology

5,373 -
JANTXV1N6625US

数据表

- SQ-MELF, A Bulk Active Standard 1100 V 1.75 V @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 60 ns 1 µA @ 1100 V - 1A Military MIL-PRF-19500/585 Surface Mount D-5A -65°C ~ 150°C
1N6542

1N6542

DIODE RECT ULT FAST REC A-PKG

Microchip Technology

2,725 -
1N6542

数据表

* - Bulk Active - - - - - - - - - - - - -
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