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单个二极管

制造商 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点
JANTX1N3644

JANTX1N3644

DIODE GP 1.5KV 250MA S AXIAL

Microchip Technology

2,550 -
JANTX1N3644

数据表

- S, Axial Bulk Active Standard 1500 V 5 V @ 250 mA Fast Recovery =< 500ns, > 200mA (Io) - 5 µA @ 1500 V - 250mA Military MIL-PRF-19500/279 Through Hole S, Axial -65°C ~ 175°C
JAN1N6642UB/TR

JAN1N6642UB/TR

DIODE GEN PURP 75V 300MA UB

Microchip Technology

8,552 -
JAN1N6642UB/TR

数据表

- 3-SMD, No Lead Tape & Reel (TR) Active Standard 75 V 1.2 V @ 100 mA Fast Recovery =< 500ns, > 200mA (Io) 5 ns 500 nA @ 75 V 5pF @ 0V, 1MHz 300mA Military MIL-PRF-19500/578 Surface Mount UB -65°C ~ 175°C
JANTXV1N6625US/TR

JANTXV1N6625US/TR

DIODE GEN PURP 1.1KV 1A D-5A

Microchip Technology

9,109 -
JANTXV1N6625US/TR

数据表

- SQ-MELF, A Tape & Reel (TR) Active Standard 1100 V 1.75 V @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 60 ns 1 µA @ 1100 V - 1A Military MIL-PRF-19500/585 Surface Mount D-5A -65°C ~ 150°C
JANTXV1N6625U/TR

JANTXV1N6625U/TR

DIODE GP 1.1KV 1A A SQ-MELF

Microchip Technology

9,889 -
JANTXV1N6625U/TR

数据表

- SQ-MELF, A Tape & Reel (TR) Active Standard 1100 V 1.75 V @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 80 ns 1 µA @ 1100 V - 1A Military MIL-PRF-19500/585 Surface Mount A, SQ-MELF -65°C ~ 150°C
JANTX1N3647/TR

JANTX1N3647/TR

DIODE GP REV 2100V 250MA S AXIAL

Microchip Technology

4,119 -
JANTX1N3647/TR

数据表

- S, Axial Tape & Reel (TR) Active Standard 2100 V 5 V @ 250 mA Standard Recovery >500ns, > 200mA (Io) - 5 µA @ 21000 V - 250mA Military MIL-PRF-19500/279 Through Hole S, Axial -65°C ~ 175°C
JANTX1N3647

JANTX1N3647

DIODE GP 3KV 250MA S AXIAL

Microchip Technology

2,685 -
JANTX1N3647

数据表

- S, Axial Bulk Active Standard 3000 V 5 V @ 250 mA Standard Recovery >500ns, > 200mA (Io) - 5 µA @ 3000 V - 250mA Military MIL-PRF-19500/279 Through Hole S, Axial -65°C ~ 175°C
JANTX1N6077

JANTX1N6077

DIODE GEN PURP 100V 1.3A A-PAK

Microchip Technology

4,636 -
JANTX1N6077

数据表

- A, Axial Bulk Active Standard 100 V 1.76 V @ 18.8 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 5 µA @ 100 V - 1.3A Military MIL-PRF-19500/503 Through Hole A-PAK -65°C ~ 155°C
JANTX1N6625/TR

JANTX1N6625/TR

DIODE GEN PURP 1.1KV 1A

Microchip Technology

7,568 -
JANTX1N6625/TR

数据表

- A, Axial Tape & Reel (TR) Active Standard 1100 V 1.75 V @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 60 ns 500 nA @ 1100 V 10pF @ 10V, 1MHz 1A Military MIL-PRF-19500/585 Through Hole A, Axial -65°C ~ 150°C
JANTX1N6076

JANTX1N6076

DIODE GEN PURP 50V 1.3A A-PAK

Microchip Technology

5,932 -
JANTX1N6076

数据表

- A, Axial Bulk Active Standard 50 V 1.76 V @ 18.8 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 5 µA @ 50 V - 1.3A Military MIL-PRF-19500/503 Through Hole A-PAK -65°C ~ 155°C
JANTX1N6625

JANTX1N6625

DIODE GEN PURP 1.1KV 1A AXIAL

Microchip Technology

4,954 -
JANTX1N6625

数据表

- A, Axial Bulk Active Standard 1100 V 1.75 V @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 60 ns 500 nA @ 1100 V 10pF @ 10V, 1MHz 1A Military MIL-PRF-19500/585 Through Hole A, Axial -65°C ~ 150°C
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