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单个二极管
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 电压 - 直流反向 (Vr)（最大值） | 电压 - 正向 (Vf)（最大值）@ If | 速度 | 反向恢复时间 (trr) | 电流 - 反向漏电 @ Vr | 电容 @ Vr, F | 电流 - 平均整流（Io） | 等级 | 认证 | 安装类型 | 供应商设备封装 | 工作温度 - 结点 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
UTR4310DIODE GEN PURP 100V 4A B AXIAL Microchip Technology |
4,101 | - |
|
数据表 |
- | B, Axial | Bulk | Active | Standard | 100 V | 1.1 V @ 4 A | Fast Recovery =< 500ns, > 200mA (Io) | 250 ns | 5 µA @ 100 V | 400pF @ 0V, 1MHz | 4A | - | - | Through Hole | B, Axial | -65°C ~ 175°C |
|
|
UTR4320DIODE GEN PURP 200V 4A B AXIAL Microchip Technology |
5,315 | - |
|
数据表 |
- | B, Axial | Bulk | Active | Standard | 200 V | 1.1 V @ 4 A | Fast Recovery =< 500ns, > 200mA (Io) | 250 ns | 5 µA @ 200 V | 320pF @ 0V, 1MHz | 4A | - | - | Through Hole | B, Axial | -65°C ~ 175°C |
|
|
UTR3310DIODE GEN PURP 100V 3A B AXIAL Microchip Technology |
4,275 | - |
|
数据表 |
- | B, Axial | Bulk | Active | Standard | 100 V | 1.1 V @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | 250 ns | 5 µA @ 100 V | 400pF @ 0V, 1MHz | 3A | - | - | Through Hole | B, Axial | -65°C ~ 175°C |
|
|
UTX225DIODE GEN PURP 250V 2A A AXIAL Microchip Technology |
3,430 | - |
|
数据表 |
- | A, Axial | Bulk | Active | Standard | 250 V | 1 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 75 ns | 3 µA @ 250 V | - | 2A | - | - | Through Hole | A, Axial | -195°C ~ 175°C |
|
|
UTR4360DIODE GEN PURP 600V 4A B AXIAL Microchip Technology |
2,325 | - |
|
数据表 |
- | B, Axial | Bulk | Active | Standard | 600 V | 1.1 V @ 4 A | Fast Recovery =< 500ns, > 200mA (Io) | 400 ns | 5 µA @ 600 V | 160pF @ 0V, 1MHz | 4A | - | - | Through Hole | B, Axial | -65°C ~ 175°C |
|
JANTXV1N5623DIODE GEN PURP 1KV 1A AXIAL Microchip Technology |
7,336 | - |
|
数据表 |
- | A, Axial | Bulk | Active | Standard | 1000 V | 1.6 V @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | 500 ns | 500 nA @ 1000 V | 15pF @ 12V, 1MHz | 1A | Military | MIL-PRF-19500/429 | Through Hole | A, Axial | -65°C ~ 175°C |
|
JANTXV1N5807US/TRDIODE GEN PURP 50V 3A D-5B Microchip Technology |
3,704 | - |
|
数据表 |
- | SQ-MELF, E | Tape & Reel (TR) | Active | Standard | 50 V | 875 mV @ 4 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 5 µA @ 50 V | 60pF @ 10V, 1MHz | 3A | Military | MIL-PRF-19500/477 | Surface Mount | D-5B | -65°C ~ 175°C |
|
JANTXV1N5623/TRDIODE GEN PURP 1KV 1A Microchip Technology |
2,513 | - |
|
数据表 |
- | A, Axial | Tape & Reel (TR) | Active | Standard | 1000 V | 1.6 V @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | 500 ns | 500 nA @ 1 V | 15pF @ 12V, 1MHz | 1A | Military | MIL-PRF-19500/429 | Through Hole | A, Axial | -65°C ~ 175°C |
|
JANTX1N5622US/TRDIODE GEN PURP 1KV 1A D-5A Microchip Technology |
4,587 | - |
|
数据表 |
- | SQ-MELF, A | Tape & Reel (TR) | Active | Standard | 1000 V | 1.3 V @ 3 A | Standard Recovery >500ns, > 200mA (Io) | 2 µs | 500 nA @ 1 V | - | 1A | Military | MIL-PRF-19500/427 | Surface Mount | D-5A | -65°C ~ 200°C |
|
|
1N4256SMDIODE GP 2.5KV 250MA S SQ-MELF Microchip Technology |
8,796 | - |
|
数据表 |
- | SQ-MELF, S | Bulk | Active | Standard | 2500 V | 3.5 V @ 100 mA | Standard Recovery >500ns, > 200mA (Io) | - | 1 µA @ 2500 V | - | 250mA | - | - | Surface Mount | S, SQ-MELF | -65°C ~ 175°C |
