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单个二极管
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 电压 - 直流反向 (Vr)（最大值） | 电压 - 正向 (Vf)（最大值）@ If | 速度 | 反向恢复时间 (trr) | 电流 - 反向漏电 @ Vr | 电容 @ Vr, F | 电流 - 平均整流（Io） | 等级 | 认证 | 安装类型 | 供应商设备封装 | 工作温度 - 结点 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
1N6620U/TRDIODE GP 220V 1.2A A SQ-MELF Microchip Technology |
6,614 | - |
|
数据表 |
- | SQ-MELF, A | Tape & Reel (TR) | Active | Standard | 220 V | 1.4 V @ 1.2 A | Fast Recovery =< 500ns, > 200mA (Io) | 45 ns | 500 nA @ 220 V | - | 1.2A | - | - | Surface Mount | A, SQ-MELF | -65°C ~ 150°C |
|
|
1N6621U/TRDIODE GP 440V 1.2A A SQ-MELF Microchip Technology |
3,661 | - |
|
数据表 |
- | SQ-MELF, A | Tape & Reel (TR) | Active | Standard | 440 V | 1.4 V @ 1.2 A | Fast Recovery =< 500ns, > 200mA (Io) | 45 ns | 500 nA @ 440 V | - | 1.2A | - | - | Surface Mount | A, SQ-MELF | -65°C ~ 150°C |
|
JANTXV1N6620/TRDIODE GEN PURP 220V 1.2A Microchip Technology |
8,436 | - |
|
数据表 |
- | A, Axial | Tape & Reel (TR) | Active | Standard | 220 V | 1.4 V @ 1.2 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 500 nA @ 220 V | - | 1.2A | Military | MIL-PRF-19500/585 | Through Hole | A, Axial | -65°C ~ 150°C |
|
|
JAN1N6628DIODE GEN PURP 660V 1.75A AXIAL Microchip Technology |
4,789 | - |
|
数据表 |
- | E, Axial | Bulk | Active | Standard | 660 V | 1.35 V @ 1.2 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 2 µA @ 600 V | - | 1.75A | Military | MIL-PRF-19500/590 | Through Hole | - | -65°C ~ 175°C |
|
|
JAN1N6631DIODE GEN PURP 1.1KV 1.4A AXIAL Microchip Technology |
4,636 | - |
|
数据表 |
- | E, Axial | Bulk | Active | Standard | 1100 V | 1.6 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 60 ns | 2 µA @ 1000 V | - | 1.4A | Military | MIL-PRF-19500/590 | Through Hole | - | -65°C ~ 175°C |
|
|
JAN1N6630DIODE GEN PURP 900V 1.4A AXIAL Microchip Technology |
6,816 | - |
|
数据表 |
- | E, Axial | Bulk | Active | Standard | 900 V | 1.4 V @ 1.4 A | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 2 µA @ 900 V | - | 1.4A | Military | MIL-PRF-19500/590 | Through Hole | - | -65°C ~ 150°C |
|
|
JANTX1N3595AUS/TRSIGNAL OR COMPUTER DIODE Microchip Technology |
2,169 | - |
|
数据表 |
- | SQ-MELF, D | Tape & Reel (TR) | Active | Standard | 125 V | 920 mV @ 100 mA | Small Signal =< 200mA (Io), Any Speed | 3 µs | 2 nA @ 125 V | 8pF @ 0V, 1MHz | 150mA | Military | MIL-S-19500-241 | Surface Mount | D-5D | -65°C ~ 175°C |
|
JANTX1N3595US/TRDIODE GEN PURP 200MA B SQ-MELF Microchip Technology |
5,492 | - |
|
数据表 |
- | SQ-MELF, B | Tape & Reel (TR) | Active | Standard | - | 1 V @ 200 mA | Small Signal =< 200mA (Io), Any Speed | 3 µs | 1 nA @ 125 V | - | 200mA | Military | MIL-S-19500-241 | Surface Mount | B, SQ-MELF | -65°C ~ 150°C |
|
1N6622DIODE GEN PURP 600V 1.2A A-PAK Microchip Technology |
3,196 | - |
|
数据表 |
- | A, Axial | Bulk | Active | Standard | 600 V | 1.4 V @ 1.2 A | Fast Recovery =< 500ns, > 200mA (Io) | 45 ns | 500 nA @ 600 V | - | 1.2A | - | - | Through Hole | A, Axial | -65°C ~ 150°C |
|
|
1N6621DIODE GEN PURP 440V 1.2A AXIAL Microchip Technology |
5,112 | - |
|
数据表 |
- | A, Axial | Bulk | Active | Standard | 440 V | 1.4 V @ 1.2 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 500 nA @ 440 V | 10pF @ 10V, 1MHz | 1.2A | - | - | Through Hole | A, Axial | -65°C ~ 150°C |
